用光电电动势法测定氢化非晶硅的光电参数

2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE) Pub Date : 2016-09-01 DOI:10.1109/ICEEE.2016.7751208

H. E. Martinez-Mateo, S. Mansurova, I. Cosme, A. Kosarev, D. Cruz

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引用次数: 0

摘要

在633nm波长的本征氢化非晶硅薄膜上测量了非稳态P-EMF电流随时间和空间调制频率的变化。光电动势电流的实验行为很好地描述了双极光电导模型。根据实验数据估计了大多数载流子寿命、介电弛豫时间、电子和空穴扩散长度及其迁移寿命乘积等材料光电参数。

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Determination of photoelectric parameters of hydrogenated amorphous silicon by the photo electromotive-force technique

Measurements of non-steady-state P-EMF current as a function temporal and spatial modulation frequencies were performed on intrinsic hydrogenated amorphous silicon film at 633 nm wavelength. The experimental behavior of photo-EMF current is well described by a bipolar photoconductivity model. Material photoelectric parameters such as majority carriers' lifetime, dielectric relaxation time, electron and holes diffusion lengths and their mobility-lifetime products were estimated from the experimental data.

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来源期刊

2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)

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