基于含氟聚合物的高性能157纳米抗蚀剂

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) Pub Date : 2001-06-12 DOI:10.1109/VLSIT.2001.934935

S. Kishimura, M. Endo, M. Sasago

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引用次数: 1

摘要

研制了一种用于F/sub / 2/激光(157 nm)真空紫外光刻的新型高性能抗蚀剂。抗蚀剂聚合物由氟化脂环甲基丙烯酸酯(MA)、氟化烷基甲基丙烯酸酯(MA)、酸不稳定单元、耐腐蚀单元和粘接单元组成。这些聚合物可以很容易地以低成本合成。基于该聚合物的抗蚀剂每100 nm厚度具有超过40%的透光率，并且具有与金刚烷基MA型arf抗蚀性相同的耐蚀性。采用F/sub - 2/激光器接触曝光，获得了垂直剖面厚度为200nm的精细图像。仿真结果表明，采用F/sub 2/激光步进(NA 0.85)的抗蚀剂在200 nm厚度下具有70 nm的L/S和40 nm的隔离线模式能力。基于所开发的157 nm抗蚀剂，157 nm VUV光刻技术可以被接受为70 nm节点。

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High-performance 157 nm resist based on fluorine-containing polymer

A new high-performance resist for F/sub 2/ laser (157 nm) VUV (vacuum ultraviolet) lithography has been developed. The resist polymers consist of fluorinated-alicyclic methacrylate (MA), fluorinated-alkyl MA, acid labile unit, etch-resistant unit and adhesive unit. These polymers can be easily synthesized at low cost. A resist based on this polymer has over 40% transmittance per 100 nm thickness and the same etch-resistance as adamanthyl MA type-ArF resists. Fine images with vertical profiles of 200 nm thickness are obtained by contact exposure with the F/sub 2/ laser. Simulations showed that the resolution of this resist with a F/sub 2/ laser stepper (NA 0.85) has 70 nm L/S and 40 nm isolated line pattern capability at 200 nm thickness. Based on the developed 157 nm resist, 157 nm VUV lithography can be accepted as a 70 nm node.

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2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)

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