{"title":"基于数值分析的CdS/CdTe光伏不同缓冲层、前后触点的研究","authors":"M. A. Matin, N. Amin, K. Sopian","doi":"10.1109/PVSC.2009.5411396","DOIUrl":null,"url":null,"abstract":"Polycrystalline thin film CdTe shows great promise for efficient, low-cost photovoltaics (PV) cell. A numerical analysis was conducted utilizing AMPS simulator to explore the possibility of higher efficiency and stable CdS/CdTe cell among seven different cell structures with tin oxide (SnO<inf>2</inf>) and cadmium stannate (Cd<inf>2</inf>SnO<inf>4</inf>) as front contact layer, zinc oxide (ZnO) and zinc stannate (Zn<inf>2</inf>SnO<inf>4</inf>) as buffer layer and Ag or antimony telluride (Sb<inf>2</inf>Te<inf>3</inf>) with Mo as back contact material. It was found that the structure of CTO/ZTO/CdS/CdTe/Ag produced best efficiency over 17%. This analysis has also shown that Cd<inf>2</inf>SnO<inf>4</inf> front contact, Zn<inf>2</inf>SnO<inf>4</inf> buffer layer and Sb<inf>2</inf>Te<inf>3</inf> back contact materials are suitable for high efficiency (≫15.5%) and stable CdTe based cells. Moreover, it was found that the cell normalized efficiency linearly decreased at the temperature gradient of −0.3%/°C.","PeriodicalId":411472,"journal":{"name":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Investigation of different buffer layers, front and back contacts for CdS/CdTe PV from numerical analysis\",\"authors\":\"M. A. Matin, N. Amin, K. Sopian\",\"doi\":\"10.1109/PVSC.2009.5411396\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Polycrystalline thin film CdTe shows great promise for efficient, low-cost photovoltaics (PV) cell. A numerical analysis was conducted utilizing AMPS simulator to explore the possibility of higher efficiency and stable CdS/CdTe cell among seven different cell structures with tin oxide (SnO<inf>2</inf>) and cadmium stannate (Cd<inf>2</inf>SnO<inf>4</inf>) as front contact layer, zinc oxide (ZnO) and zinc stannate (Zn<inf>2</inf>SnO<inf>4</inf>) as buffer layer and Ag or antimony telluride (Sb<inf>2</inf>Te<inf>3</inf>) with Mo as back contact material. It was found that the structure of CTO/ZTO/CdS/CdTe/Ag produced best efficiency over 17%. This analysis has also shown that Cd<inf>2</inf>SnO<inf>4</inf> front contact, Zn<inf>2</inf>SnO<inf>4</inf> buffer layer and Sb<inf>2</inf>Te<inf>3</inf> back contact materials are suitable for high efficiency (≫15.5%) and stable CdTe based cells. Moreover, it was found that the cell normalized efficiency linearly decreased at the temperature gradient of −0.3%/°C.\",\"PeriodicalId\":411472,\"journal\":{\"name\":\"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2009.5411396\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 34th IEEE Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2009.5411396","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of different buffer layers, front and back contacts for CdS/CdTe PV from numerical analysis
Polycrystalline thin film CdTe shows great promise for efficient, low-cost photovoltaics (PV) cell. A numerical analysis was conducted utilizing AMPS simulator to explore the possibility of higher efficiency and stable CdS/CdTe cell among seven different cell structures with tin oxide (SnO2) and cadmium stannate (Cd2SnO4) as front contact layer, zinc oxide (ZnO) and zinc stannate (Zn2SnO4) as buffer layer and Ag or antimony telluride (Sb2Te3) with Mo as back contact material. It was found that the structure of CTO/ZTO/CdS/CdTe/Ag produced best efficiency over 17%. This analysis has also shown that Cd2SnO4 front contact, Zn2SnO4 buffer layer and Sb2Te3 back contact materials are suitable for high efficiency (≫15.5%) and stable CdTe based cells. Moreover, it was found that the cell normalized efficiency linearly decreased at the temperature gradient of −0.3%/°C.
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