大功率快速恢复整流器的开关性能

1981 IEEE Power Electronics Specialists Conference Pub Date : 1981-06-01 DOI:10.1109/PESC.1981.7083645

G. Bisio, M. Icardi, E. Dizitti, M. Portesine, S. Tenconi

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引用次数: 4

摘要

在300 K ~ 425 K的温度范围内，用OCVD测量了au - pt扩散和γ辐照p+-n-n+二极管在高注入和低注入水平下的开关性能。从理论上和实验上分析了注入效率、基片宽度和电阻率对反向恢复时间和脉冲的影响。

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Switching performances of high power fast recovery rectifiers

The switching performances of Au-Pt-diffused and gamma-irradiated p+-n-n+ diodes are considered with OCVD measurements, at high and low level of injection, in the temperature range of 300 K - 425 K. The dependence of reverse recovery time and snappines fromc arrier lifetimes injection efficiency, width and resistivity of the base is analyzed experimentally and theoretically.

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1981 IEEE Power Electronics Specialists Conference

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