SiC和Si逆变器模块在电变量传输中的性能比较

2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe) Pub Date : 2020-09-01 DOI:10.23919/EPE20ECCEEurope43536.2020.9215658

M. D. Vecchia, S. Ravyts, F. Verbelen, J. Tant, P. Sergeant, J. Driesen

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引用次数: 1

摘要

本文评估了用于电变量传输系统的三相逆变器中碳化硅MOSFET和硅IGBT模块的性能。为此，开发了两种实用的逆变器设置并进行了比较。在碳化硅原型的整个工作范围内，可以看到几个百分点的增长。在相同的测试条件下，转子的总能效提高了3.7%，定子的总能效提高了11.2%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Performance Comparison Between SiC and Si Inverter Modules in an Electrical Variable Transmission Application

This paper evaluates the performance of Silicon Carbide MOSFET and Silicon IGBT modules in a three-phase inverter for Electrical Variable Transmission systems. For this purpose, two practical inverter setups were developed and compared. An increase of several percentage points is visible over the entire operating range for the Silicon Carbide prototype. The total energy efficiency increased by 3.7% for the rotor and by 11.2% for the stator, for the same test conditions.

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来源期刊

2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

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