化学沉积压片技术的凸点

40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI:10.1109/ECTC.1990.122223

J. Simon, E. Zakel, H. Reichl

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引用次数: 43

摘要

研究了化学镀镍的碰撞现象。在铝键垫上选择性地形成了265 μ m高度的化学镍凸点。镍凸起是用内部铅键连接到带一层厚锡的胶带上的。研究了粘结垫预处理对粘结块粘附性能的影响。值得注意的是，化学碰撞提供了最大的优势，降低碰撞过程的成本，因为不需要溅射设备或光刻。如果只需要少量的凸模，这一点非常重要，因为该工艺与衬底尺寸无关。至少在某些应用中，化学碰撞可能成为电沉积传统晶圆碰撞的替代方法。

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Electroless deposition of bumps for TAB technology

Electroless nickel plating was investigated for bumping. Electroless nickel bumps with a height of 265 mu m have been selectively formed on aluminium bondpads. The nickel bumps have been inner-lead-bonded by gang bonding to a tape with a thick layer of tin. The adhesion of the bumps was investigated as a function of the pretreatment of the bondpads. It is noted that electroless bumping offers the greatest advantage of reducing the costs of the bumping process because no sputtering equipment or lithography is required. This can be very important if only small quantities of bumped dies are required because the process is independent of substrate size. Electroless bumping may become an alternative to conventional wafer bumping by electrodeposition at least for certain applications.<>

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来源期刊

40th Conference Proceedings on Electronic Components and Technology

CiteScore

3.10

自引率

0.00%

发文量