{"title":"一种4ghz行波管可替换GaAs mfset放大器","authors":"Y. Arai, Shin-ichi Murai, Hidemitsu Karnizo","doi":"10.1109/EUMA.1978.332549","DOIUrl":null,"url":null,"abstract":"A 4 GHz 10 watt MESFET anplifier for replacerrent of a Traveling-Wave-Tube amplifier has been developed. The anplifier consists of a herrretically sealed five stage anplifier rrodule using GaAs MFSFET chips and DC power supply. The anplifier provides an output power of 10 watts at 1 dB gain conpression, a linear gain of 39 dB and a power efficiency of 18 percent over the operating frequency range from 3.6 GHz to 4.2 GHz.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 4 GHz TWT Repiaceable GaAs MFSFET Amplifier\",\"authors\":\"Y. Arai, Shin-ichi Murai, Hidemitsu Karnizo\",\"doi\":\"10.1109/EUMA.1978.332549\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 4 GHz 10 watt MESFET anplifier for replacerrent of a Traveling-Wave-Tube amplifier has been developed. The anplifier consists of a herrretically sealed five stage anplifier rrodule using GaAs MFSFET chips and DC power supply. The anplifier provides an output power of 10 watts at 1 dB gain conpression, a linear gain of 39 dB and a power efficiency of 18 percent over the operating frequency range from 3.6 GHz to 4.2 GHz.\",\"PeriodicalId\":429268,\"journal\":{\"name\":\"1978 8th European Microwave Conference\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1978-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 8th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1978.332549\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 8th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1978.332549","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 4 GHz 10 watt MESFET anplifier for replacerrent of a Traveling-Wave-Tube amplifier has been developed. The anplifier consists of a herrretically sealed five stage anplifier rrodule using GaAs MFSFET chips and DC power supply. The anplifier provides an output power of 10 watts at 1 dB gain conpression, a linear gain of 39 dB and a power efficiency of 18 percent over the operating frequency range from 3.6 GHz to 4.2 GHz.
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