利用单轴压力下光致发光的积分偏振研究n-GaAs中低对称性配合物的结构

Proceedings of Semiconducting and Semi-Insulating Materials Conference Pub Date : 1996-04-29 DOI:10.1109/SIM.1996.571096

A. Gutkin, M. Reshchikov, V. Sedov, V.R. Sosnovskii

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引用次数: 0

摘要

我们研究了单轴压力对GaAs中与配合物相关的宽光致发光(PL)带偏振的影响。结果表明，1.2 eV PL波段的V/sub Ga/Te/sub As/、V/sub Ga/Sn/sub Ga/和V/sub Ga/Si/sub Ga/配合物以及1.3 eV PL波段的Cu/sub Ga/Te/sub As/、Cu/sub Ga/S/sub As/和Cu/sub Ga/Se/sub As/配合物具有额外的畸变，在低温PL观测条件下，这种畸变可以通过单轴压力重新定向和排列。

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Study of structure of low-symmetry complexes in n-GaAs through investigation of integrated polarization of photoluminescence under uniaxial pressure

We have investigated the effect of uniaxial pressure on polarization of wide photoluminescence (PL) bands related to complexes in GaAs. It is shown that the V/sub Ga/Te/sub As/, V/sub Ga/Sn/sub Ga/ and V/sub Ga/Si/sub Ga/ complexes responsible for the 1.2 eV PL band and the Cu/sub Ga/Te/sub As/, Cu/sub Ga/S/sub As/ and Cu/sub Ga/Se/sub As/ complexes responsible for the 1.3 eV PL band have an additional distortion which can be reoriented and aligned by uniaxial pressure in conditions of PL observation at low temperature.

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Proceedings of Semiconducting and Semi-Insulating Materials Conference

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