分子束外延生长/spl β /-FeSi/亚2/活性区硅基发光二极管及表征

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI:10.1109/GROUP4.2004.1416635

T. Suemasu, M. Takauji, T. Sunohara, C. Li, F. Hasegawa

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引用次数: 0

摘要

采用分子束外延的方法在Si(001)和Si(111)衬底上分别生长了具有/spl β /-FeSi/sub 2/颗粒和具有a/ spl β /-FeSi/sub 2/连续薄膜活性区的Si p-n结发光二极管，并对其电致发光性能进行了研究。

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Growth and characterization of Si-based light-emitting diode with /spl beta/-FeSi/sub 2/ active region by molecular beam epitaxy

Si p-n junction light-emitting diodes with /spl beta/-FeSi/sub 2/ particles and with a /spl beta/-FeSi/sub 2/ continuous film active region were grown on Si(001) and Si(111) substrates, respectively, by molecular beam epitaxy and the electroluminescence properties were investigated.

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First IEEE International Conference on Group IV Photonics, 2004.

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