InGaN纳米棒led:性能评估

2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2012-10-02 DOI:10.1109/NUSOD.2012.6316531

B. Witzigmann, M. Deppner, F. Romer

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引用次数: 0

摘要

发光二极管(led)作为一种高效的光源已经成为一个有吸引力的概念。在这篇贡献中，通过详细的模拟研究了基于不良氮化物的核壳纳米棒led的电光性能。与平面光子晶体相比，它们在小足迹上具有更大的活性区域面积，具有c面垂直生长的非极性活性区域，并形成用于光学提取过程的水平二维有源光子晶体。

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InGaN nanorod LEDs: A performance assessment

Light Emitting Diodes (LEDs) have become an attractive concept as efficient light sources. In this contribution, the electro-optical performance of Ill-nitride based core-shell nanorod LEDs is investigated by detailed simulation. In contrast to their planar counterparts, they possess increased active region area on small footprint, non-polar active regions with c-plane vertical growth, and form horizontal two-dimensional active photonic crystals for the optical extraction process.

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来源期刊

2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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