{"title":"不同汞含量CdS/CdMgTe薄膜异质结构的电荷输运机制和效率谱","authors":"O. Maslyanchuk, I. Fodchuk, T. Mykytyuk","doi":"10.1117/12.2553919","DOIUrl":null,"url":null,"abstract":"The electrical and photoelectric properties of thin-film CdS/Cd1-xMgxTe (x = 0-0.07) solar cells are investigated. The measured I-V characteristics of the heterostructures are described in terms of well-known theoretical models. The quantum efficiency spectra are analyzed taking into account the drift and diffusion components, recombination on the front and rear surfaces of the Cd1-xMgxTe absorber layer. Comparison of the calculation results with the experimental data allows to determine the main parameters of the Cd1-xMgxTe layer and diode structure.","PeriodicalId":250235,"journal":{"name":"International Conference on Correlation Optics","volume":"135 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Charge transport mechanisms and efficiency spectra of thin-film CdS/CdMgTe heterostructures with different mercury content\",\"authors\":\"O. Maslyanchuk, I. Fodchuk, T. Mykytyuk\",\"doi\":\"10.1117/12.2553919\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical and photoelectric properties of thin-film CdS/Cd1-xMgxTe (x = 0-0.07) solar cells are investigated. The measured I-V characteristics of the heterostructures are described in terms of well-known theoretical models. The quantum efficiency spectra are analyzed taking into account the drift and diffusion components, recombination on the front and rear surfaces of the Cd1-xMgxTe absorber layer. Comparison of the calculation results with the experimental data allows to determine the main parameters of the Cd1-xMgxTe layer and diode structure.\",\"PeriodicalId\":250235,\"journal\":{\"name\":\"International Conference on Correlation Optics\",\"volume\":\"135 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-02-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Correlation Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2553919\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Correlation Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2553919","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Charge transport mechanisms and efficiency spectra of thin-film CdS/CdMgTe heterostructures with different mercury content
The electrical and photoelectric properties of thin-film CdS/Cd1-xMgxTe (x = 0-0.07) solar cells are investigated. The measured I-V characteristics of the heterostructures are described in terms of well-known theoretical models. The quantum efficiency spectra are analyzed taking into account the drift and diffusion components, recombination on the front and rear surfaces of the Cd1-xMgxTe absorber layer. Comparison of the calculation results with the experimental data allows to determine the main parameters of the Cd1-xMgxTe layer and diode structure.
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