90nm CMOS中注入锁定三阶段单端和差分端vco的可调性和相位噪声的比较

J. Johnson, Maran Ponnambalam, P. Chandramani
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引用次数: 5

摘要

本研究探索了适用于频率合成器的注入锁定单端和差分端环压控振荡器(VCO),该振荡器可在较宽的频率范围内工作,同时降低相位噪声。在设计过程中,对3级单端和差动端注入锁环VCO拓扑结构进行了比较研究。单端VCO的调谐范围为1.2至3.6 GHz,在10mhz偏移时相位噪声为- 110.2 dBc/Hz;差分端VCO的调谐范围为1.5至3.1 GHz,在10mhz偏移时相位噪声为- 109.9 dBc/Hz。在ADS (Advance Design System)中,采用90 nm CMOS技术设计了注入锁定vco。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparison of tunability and phase noise associated with injection locked three staged single and differential ended VCOs in 90nm CMOS
This work explores the injection locked single and differential ended ring VCO (Voltage Controlled Oscillator) suitable for a frequency synthesizer to operating over a wide range of frequencies with reduced phase noise. Along with design, the comparisons between 3 stage single ended and differential ended injection locked ring VCO topologies were studied. Single ended VCO was observed to have a tuning range of 1.2 to 3.6 GHz with phase noise of −110.2 dBc/Hz at 10 MHz offset and differential ended design have a tuning range of 1.5 to 3.1 GHz with phase noise of −109.9 dBc/Hz at 10 MHz offset. The injection locked VCOs were designed using 90 nm CMOS technology in ADS (Advance Design System).
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