SiGe HBT技术中带感应反馈的140 GHz单端注入锁定分频器

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 1900-01-01 DOI:10.1109/SIRF.2012.6160135

J. Yun, Hyunchul Kim, H. Seo, J. Rieh

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引用次数: 7

摘要

在这项工作中，提出了一种具有感应反馈的单端除以2注入锁定分频器。该分频器采用商用0.18 μm SiGe HBT技术制造，测量锁定范围为126.9-141.5 GHz (14.7 GHz)，工作范围为126.9-150.0 GHz (23.1 GHz)。ILFD铁芯直流功耗为6.9 mW，输出缓冲器直流功耗为13.5 mW。

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A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology

In this work, a single-ended divide-by-2 injection locked frequency divider with inductive feedback is presented. The frequency divider, fabricated in a commercial 0.18 μm SiGe HBT technology, showed a measured locking range of 126.9-141.5 GHz (14.7 GHz) and an operating range of 126.9-150.0 GHz (23.1 GHz) with bias adjustment. The DC power consumption of the ILFD core was 6.9 mW and that of the output buffer was 13.5 mW.

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2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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