用于冰盖雷达探测和成像的超宽带功率放大器

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8126548

J. Yan, S. Gogineni, J. Nunn

{"title":"用于冰盖雷达探测和成像的超宽带功率放大器","authors":"J. Yan, S. Gogineni, J. Nunn","doi":"10.1109/EDSSC.2017.8126548","DOIUrl":null,"url":null,"abstract":"Airborne ultrawideband radars operating at VHF/UHF frequencies can be used to sound and image polar ice sheets with fine-resolution. The sensitivity of the radar depends upon the power-aperture product. High peak power coupled with a large aperture is required to sound more than 4-km thick ice. In this paper, we present the design of a 400-W power amplifier for operation over the frequency range of 150–550 MHz. The amplifier uses gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) manufactured by Cree. The primary design goals are to maximize the output power and gain while minimizing the harmonic levels. To achieve these, a push-pull configuration with quadrature combining is implemented.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultrawideband power amplifier for radar sounding and imaging of ice sheets\",\"authors\":\"J. Yan, S. Gogineni, J. Nunn\",\"doi\":\"10.1109/EDSSC.2017.8126548\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Airborne ultrawideband radars operating at VHF/UHF frequencies can be used to sound and image polar ice sheets with fine-resolution. The sensitivity of the radar depends upon the power-aperture product. High peak power coupled with a large aperture is required to sound more than 4-km thick ice. In this paper, we present the design of a 400-W power amplifier for operation over the frequency range of 150–550 MHz. The amplifier uses gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) manufactured by Cree. The primary design goals are to maximize the output power and gain while minimizing the harmonic levels. To achieve these, a push-pull configuration with quadrature combining is implemented.\",\"PeriodicalId\":163598,\"journal\":{\"name\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"volume\":\"119 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2017.8126548\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8126548","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

工作在甚高频/超高频频率的机载超宽带雷达可用于对极地冰盖进行高分辨率的声音和成像。雷达的灵敏度取决于功率-孔径乘积。要探测厚度超过4公里的冰层，需要高峰值功率和大孔径。在本文中，我们提出了一个400-W功率放大器的设计，工作频率范围为150-550 MHz。该放大器采用Cree公司生产的氮化镓(GaN)高电子迁移率晶体管(hemt)。主要的设计目标是最大化输出功率和增益，同时最小化谐波电平。为了实现这些，实现了具有正交组合的推拉配置。

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Ultrawideband power amplifier for radar sounding and imaging of ice sheets

Airborne ultrawideband radars operating at VHF/UHF frequencies can be used to sound and image polar ice sheets with fine-resolution. The sensitivity of the radar depends upon the power-aperture product. High peak power coupled with a large aperture is required to sound more than 4-km thick ice. In this paper, we present the design of a 400-W power amplifier for operation over the frequency range of 150–550 MHz. The amplifier uses gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) manufactured by Cree. The primary design goals are to maximize the output power and gain while minimizing the harmonic levels. To achieve these, a push-pull configuration with quadrature combining is implemented.

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来源期刊

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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