K. Kamogawa, K. Nishikawa, T. Tokumitsu, M. Tanaka
{"title":"基于Si三维MMIC技术的新型高q电感及其应用","authors":"K. Kamogawa, K. Nishikawa, T. Tokumitsu, M. Tanaka","doi":"10.1109/RFIC.1999.805267","DOIUrl":null,"url":null,"abstract":"A novel high-Q spiral inductor, implemented on a conductive Si wafer by applying the 3D MMIC structure over it, is proposed. The proposed inductor effectively uses a 10 /spl mu/m thick polyimide layers and ground plane with a window below the spiral. A Q-factor of 21.7 at 1.88 nH and 5.8 GHz is achieved. A 5 GHz-band LNA is also designed with the new inductors and Si BJT with f/sub max/ of 24 GHz, and the highest-class of performance was predicted with a 20 dB gain and a 2.5 dB noise figure.","PeriodicalId":447109,"journal":{"name":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A novel high-Q inductor based on Si 3D MMIC technology and its application\",\"authors\":\"K. Kamogawa, K. Nishikawa, T. Tokumitsu, M. Tanaka\",\"doi\":\"10.1109/RFIC.1999.805267\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel high-Q spiral inductor, implemented on a conductive Si wafer by applying the 3D MMIC structure over it, is proposed. The proposed inductor effectively uses a 10 /spl mu/m thick polyimide layers and ground plane with a window below the spiral. A Q-factor of 21.7 at 1.88 nH and 5.8 GHz is achieved. A 5 GHz-band LNA is also designed with the new inductors and Si BJT with f/sub max/ of 24 GHz, and the highest-class of performance was predicted with a 20 dB gain and a 2.5 dB noise figure.\",\"PeriodicalId\":447109,\"journal\":{\"name\":\"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.1999.805267\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.1999.805267","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel high-Q inductor based on Si 3D MMIC technology and its application
A novel high-Q spiral inductor, implemented on a conductive Si wafer by applying the 3D MMIC structure over it, is proposed. The proposed inductor effectively uses a 10 /spl mu/m thick polyimide layers and ground plane with a window below the spiral. A Q-factor of 21.7 at 1.88 nH and 5.8 GHz is achieved. A 5 GHz-band LNA is also designed with the new inductors and Si BJT with f/sub max/ of 24 GHz, and the highest-class of performance was predicted with a 20 dB gain and a 2.5 dB noise figure.
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