掺杂聚(3-己基噻吩)的富勒烯和酞菁铜器件的光伏性能

2013 International Conference on Electrical Engineering and Software Applications Pub Date : 2013-03-21 DOI:10.1109/ICEESA.2013.6578401

H. Derouiche, A. B. Mohamed

{"title":"掺杂聚(3-己基噻吩)的富勒烯和酞菁铜器件的光伏性能","authors":"H. Derouiche, A. B. Mohamed","doi":"10.1109/ICEESA.2013.6578401","DOIUrl":null,"url":null,"abstract":"We have fabricated organic solar cells, with an active layer of fullerene (C60) and Copper-phthalocyanine (CuPc) doped with poly(3-hexylthiophène) (P3HT) deposited by spin-coating. This layer is sandwiched between the anode, an indium tin oxide film and the C60 layer. We have studied the effect of CuPc doping using P3HT in order to improve the efficiency of the photovoltaic devices. The thin films have been characterized by infrared absorption measurements (I-R), Atomic force microscope (AFM) and ultraviolet/visible spectroscopy in order to study the influence of P3HT doping on the properties of the solar cells. We have also compared the I-V characteristics of two different structures: ITO/PEDOT:PSS/ C60-CuPc/Al and ITO/PEDOT:PSS/ C60-CuPc-P3HT/Al. Both structures show weak but significant photovoltaic behaviour. Indeed, doping CuPc with P3HT improves the efficiencies of the solar cells. We have also seen that the diffusion of species from the indium tin oxide (ITO) anode into the active layer causes a decrease in overall photovoltaic characteristics of C60-CuPc-P3HT based solar cell.","PeriodicalId":212631,"journal":{"name":"2013 International Conference on Electrical Engineering and Software Applications","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photovoltaic properties of devices using fullerene and copper-phthalocyanine doped with poly(3-hexylthiophène)\",\"authors\":\"H. Derouiche, A. B. Mohamed\",\"doi\":\"10.1109/ICEESA.2013.6578401\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have fabricated organic solar cells, with an active layer of fullerene (C60) and Copper-phthalocyanine (CuPc) doped with poly(3-hexylthiophène) (P3HT) deposited by spin-coating. This layer is sandwiched between the anode, an indium tin oxide film and the C60 layer. We have studied the effect of CuPc doping using P3HT in order to improve the efficiency of the photovoltaic devices. The thin films have been characterized by infrared absorption measurements (I-R), Atomic force microscope (AFM) and ultraviolet/visible spectroscopy in order to study the influence of P3HT doping on the properties of the solar cells. We have also compared the I-V characteristics of two different structures: ITO/PEDOT:PSS/ C60-CuPc/Al and ITO/PEDOT:PSS/ C60-CuPc-P3HT/Al. Both structures show weak but significant photovoltaic behaviour. Indeed, doping CuPc with P3HT improves the efficiencies of the solar cells. We have also seen that the diffusion of species from the indium tin oxide (ITO) anode into the active layer causes a decrease in overall photovoltaic characteristics of C60-CuPc-P3HT based solar cell.\",\"PeriodicalId\":212631,\"journal\":{\"name\":\"2013 International Conference on Electrical Engineering and Software Applications\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Electrical Engineering and Software Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEESA.2013.6578401\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Electrical Engineering and Software Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEESA.2013.6578401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们制备了一种有机太阳能电池，其活性层为富勒烯(C60)和铜酞菁(CuPc)，掺杂聚(3-己基噻吩)(P3HT)。该层夹在阳极、氧化铟锡膜和C60层之间。为了提高光伏器件的效率，我们研究了P3HT掺杂CuPc的效果。采用红外吸收光谱(I-R)、原子力显微镜(AFM)和紫外/可见光谱对薄膜进行表征，研究P3HT掺杂对太阳能电池性能的影响。我们还比较了ITO/PEDOT:PSS/ C60-CuPc/Al和ITO/PEDOT:PSS/ C60-CuPc- p3ht /Al两种不同结构的I-V特性。这两种结构都表现出微弱但显著的光伏行为。事实上，用P3HT掺杂CuPc可以提高太阳能电池的效率。我们还看到，物质从氧化铟锡(ITO)阳极扩散到活性层导致c60 - cupco - p3ht基太阳能电池的整体光伏特性下降。

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Photovoltaic properties of devices using fullerene and copper-phthalocyanine doped with poly(3-hexylthiophène)

We have fabricated organic solar cells, with an active layer of fullerene (C60) and Copper-phthalocyanine (CuPc) doped with poly(3-hexylthiophène) (P3HT) deposited by spin-coating. This layer is sandwiched between the anode, an indium tin oxide film and the C60 layer. We have studied the effect of CuPc doping using P3HT in order to improve the efficiency of the photovoltaic devices. The thin films have been characterized by infrared absorption measurements (I-R), Atomic force microscope (AFM) and ultraviolet/visible spectroscopy in order to study the influence of P3HT doping on the properties of the solar cells. We have also compared the I-V characteristics of two different structures: ITO/PEDOT:PSS/ C60-CuPc/Al and ITO/PEDOT:PSS/ C60-CuPc-P3HT/Al. Both structures show weak but significant photovoltaic behaviour. Indeed, doping CuPc with P3HT improves the efficiencies of the solar cells. We have also seen that the diffusion of species from the indium tin oxide (ITO) anode into the active layer causes a decrease in overall photovoltaic characteristics of C60-CuPc-P3HT based solar cell.

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2013 International Conference on Electrical Engineering and Software Applications

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