{"title":"无实验调整技术的x波段微带场效应管放大器改进设计方法。","authors":"A. Delgado, C. Camaoho, V. Ortega","doi":"10.1109/EUMA.1978.332546","DOIUrl":null,"url":null,"abstract":"In this paper we desrcibe a preoise method of designing FET amplifiers, that permit us to get a very good accordanoe between the ca1cu1ated design networks and the final results obtained by measurements, avoiding the lengthy and tricky adjustment that are usual. With our method we have designed a two-stage FET amplifier at 12 GHz, using two NE24406 transistors, with 21 dB gain, 4.0 dB noise factor and 1.25 input and output VSWR. The circuit has been made on alumina substrates. These excellent results were obtained in the first design without any adjustment, which proves the exactitude of our design method.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improved Design Method for X-Band Microstrip FET Amplifiers without Experimental Adjustment Techniques.\",\"authors\":\"A. Delgado, C. Camaoho, V. Ortega\",\"doi\":\"10.1109/EUMA.1978.332546\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we desrcibe a preoise method of designing FET amplifiers, that permit us to get a very good accordanoe between the ca1cu1ated design networks and the final results obtained by measurements, avoiding the lengthy and tricky adjustment that are usual. With our method we have designed a two-stage FET amplifier at 12 GHz, using two NE24406 transistors, with 21 dB gain, 4.0 dB noise factor and 1.25 input and output VSWR. The circuit has been made on alumina substrates. These excellent results were obtained in the first design without any adjustment, which proves the exactitude of our design method.\",\"PeriodicalId\":429268,\"journal\":{\"name\":\"1978 8th European Microwave Conference\",\"volume\":\"77 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1978-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 8th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1978.332546\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 8th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1978.332546","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improved Design Method for X-Band Microstrip FET Amplifiers without Experimental Adjustment Techniques.
In this paper we desrcibe a preoise method of designing FET amplifiers, that permit us to get a very good accordanoe between the ca1cu1ated design networks and the final results obtained by measurements, avoiding the lengthy and tricky adjustment that are usual. With our method we have designed a two-stage FET amplifier at 12 GHz, using two NE24406 transistors, with 21 dB gain, 4.0 dB noise factor and 1.25 input and output VSWR. The circuit has been made on alumina substrates. These excellent results were obtained in the first design without any adjustment, which proves the exactitude of our design method.
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