生长优势共晶相变材料的结晶

T. Hurst, M. Horie, P. Khulbe
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引用次数: 4

摘要

我们报道了利用共晶家族成员Ge(Sb/sub 70/Te/sub 30/)+Sb(以下简称“SGT薄膜”)的特征的初步努力。在SGT薄膜中掺杂过量的Sb以控制结晶速度。Ge/sub 2/Sb/sub 2.3/Te/sub 5/ (GST)薄膜的结晶行为通常以成核为主:结晶主要通过“胚胎”的产生进行,如果胚胎足够大,形成稳定的核,然后从非晶相区域的内部和边缘生长。相比之下,SGT薄膜的成核概率较低。因此,结晶主要是从无定形标记边界开始的。了解和比较各种SGT薄膜的这种生长主导的结晶模式,并与成核主导的GST薄膜进行比较,是这项工作的目的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Crystallization of growth-dominant eutectic phase-change materials
We report on initial efforts to exploit the characteristics of members of the eutectic family Ge(Sb/sub 70/Te/sub 30/)+Sb (hereafter referred to as "SGT films"). SGT films are doped with excess Sb for crystallization speed control. Ge/sub 2/Sb/sub 2.3/Te/sub 5/ (GST) films are usually nucleation-dominant in their crystallization behavior: crystallization proceeds mainly via the generation of "embryos," which if sufficiently large, form stable nucleites, which then grow from the interior and edge of amorphous-phase regions. In contrast, SGT films have low nucleation probability. As a consequence, crystallization proceeds primarily from the amorphous mark boundaries. Understanding and comparing this growth-dominant crystallization mode for various instances of the SGT films, and and comparing with nucleation-dominant GST films, is the objective of the work.
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