太赫兹CMOS设计的器件特性和建模

2015 IEEE MTT-S International Microwave and RF Conference (IMaRC) Pub Date : 2015-12-01 DOI:10.1109/IMARC.2015.7411451

M. Fujishima

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引用次数: 0

摘要

近年来，越来越多的工作在太赫兹(≥0.1 THz)频率的CMOS集成电路被报道出来。然而，设计环境和技术并不像射频CMOS电路那样完善。本文综述了我们在太赫兹CMOS设计中的器件表征和建模方面的最新进展。最后，作为太赫兹CMOS设计的应用实例，给出了11gb /s、20pj的低功耗高速无线数据传输和7 pJ/bit的超低功耗收发芯片。

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Device characterization and modeling for Terahertz CMOS design

More and more CMOS integrated circuits operating at terahertz (≥ 0.1 THz) frequencies have been reported recently. However, design environments and techniques are not as well established as for RF CMOS circuits. This paper reviews our recent progress in device characterization and modeling for terahertz CMOS design. Finally, as an application example of terahertz CMOS design, low-power high-speed wireless data transfer at 11 Gb/s and 20 pJ and a 7-pJ/bit ultra-low-power transceiver chipset are presented.

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2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)

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