ITRS商用内存路线图

Records of the 2003 International Workshop on Memory Technology, Design and Testing Pub Date : 2003-07-28 DOI:10.1109/MTDT.2003.1222362

R. Barth

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引用次数: 6

摘要

ITRS(国际半导体技术路线图)路线图每年更新一次，以预测工业硅的趋势。ITRS测试工作组(TWG)确定将对设备测试产生影响的关键趋势，并对其进行总结，为测试供应商提供指导。商品存储器路线图是该预测的关键部分，涵盖分立和嵌入式DRAM和闪存。本文中的材料代表了2003年11月发布的潜在商品内存路线图的一个非常早期的视图，并且是基于2002年的路线图。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ITRS commodity memory roadmap

The ITRS (International Technology Roadmap for Semiconductors) roadmap is updated on a yearly basis to forecast industry silicon trends. The ITRS Test Working Group (TWG) identifies the key trends that will have an impact on device test and summarizes them to provide direction to test suppliers. The commodity memory roadmap is a key part of that forecast and covers discrete and embedded DRAM and Flash. The material in this paper represents a very early look at the potential commodity memory roadmap due for release in November of 2003 and is based upon the 2002 roadmap.

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Records of the 2003 International Workshop on Memory Technology, Design and Testing

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