Si -i-n二极管集成光发射器和检测器的氮化硅光波导传输特性

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI:10.1109/GROUP4.2004.1416706

A. Yamada, M. Sakuraba, J. Murota, K. Wada, L. Kimerling

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引用次数: 1

摘要

对于光在不同宽度的氮化硅光波导中的传播，计算了弯曲损耗，并利用集成在硅衬底上的一对硅p-i-n二极管澄清了弯曲半径的依赖关系。

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Propagation characteristics of Si nitride optical waveguide integrated with Si p-i-n diodes for light emitter and detector

For light propagation in Si nitride optical waveguides with various width, bending loss is evaluated, and the bending radius dependence is clarified using a pair of Si p-i-n diodes integrated on Si substrate.

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First IEEE International Conference on Group IV Photonics, 2004.

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