用于耐辐射频率合成器的SOl CMOS压控振荡器的设计和测试问题

2018 IEEE East-West Design & Test Symposium (EWDTS) Pub Date : 2018-09-01 DOI:10.1109/EWDTS.2018.8524835

D. Sotskov, V. Elesin, G. Nazarova, K. Amburkin, D. Amburkin, G. Chukov, N. Usachev, A. Nikiforov

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引用次数: 2

摘要

介绍了空间应用射频压控振荡器(vco)的设计和测试问题。该方法在350 nm和180 nm SOI CMOS工艺中实现的差分交叉耦合电感-电容(dc - lc)压控振荡器的设计和测试中得到了验证。根据辐射测试结果，DCC-LC vco可耐受高达300 krad的总电离剂量损伤，对LET高达80 Me V. cm2/mg的重离子暴露低敏感，可有效用于空间应用的频率合成器。

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Design and Test Issues of a SOl CMOS Voltage Controlled Oscillators for Radiation Tolerant Frequency Synthesizers

Design and test issues of RF voltage controlled oscillators (VCOs) for space applications are presented. The proposed approach was demonstrated during the design and testing of the differential cross-coupled inductance-capacitance (DCC-LC) VCOs implemented in 350 nm and 180 nm SOI CMOS processes. According to the radiation test results the DCC-LC VCOs are tolerant to total ionizing dose damage up to 300 krad, low-sensitive to heavy ions exposure with LET up to 80 Me V. cm2/mg and can be effectively used in frequency synthesizers for space applications.

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2018 IEEE East-West Design & Test Symposium (EWDTS)

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