4w 12mm多电池微波功率GaAs MESFET的非线性建模

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785957

Cong Gu, G. Qian, You-Wei Liu

{"title":"4w 12mm多电池微波功率GaAs MESFET的非线性建模","authors":"Cong Gu, G. Qian, You-Wei Liu","doi":"10.1109/ICSICT.1998.785957","DOIUrl":null,"url":null,"abstract":"Based on the proposed many models for GaAs MESFET, we put forth a newly modified large-signal model for 4 W 12 mm multi-cell microwave power GaAs MESFET in this paper. The newly improved model presented here includes the analytical expressions of I/sub ds/(V/sub gs/, V/sub ds/) elements operating at microwave frequency in large signal. Also comparison with three kinds of the original formula proposed by Materka, Jastrzebski and Curtice, we found that the modified I/sub ds/ in here is more accuracy.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"404 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Nonlinear modeling of 4 W 12 mm multi-cell microwave power GaAs MESFET\",\"authors\":\"Cong Gu, G. Qian, You-Wei Liu\",\"doi\":\"10.1109/ICSICT.1998.785957\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Based on the proposed many models for GaAs MESFET, we put forth a newly modified large-signal model for 4 W 12 mm multi-cell microwave power GaAs MESFET in this paper. The newly improved model presented here includes the analytical expressions of I/sub ds/(V/sub gs/, V/sub ds/) elements operating at microwave frequency in large signal. Also comparison with three kinds of the original formula proposed by Materka, Jastrzebski and Curtice, we found that the modified I/sub ds/ in here is more accuracy.\",\"PeriodicalId\":286980,\"journal\":{\"name\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"volume\":\"404 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1998.785957\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785957","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

基于已有的多种GaAs MESFET模型，本文提出了一种改进的4w 12mm多单元微波功率GaAs MESFET大信号模型。本文提出的新改进模型包含了在大信号微波频率下工作的I/sub - ds/(V/sub - gs/， V/sub - ds/)元的解析表达式。并与Materka, Jastrzebski和Curtice提出的三种原始公式进行比较，我们发现这里修改后的I/sub ds/更准确。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Nonlinear modeling of 4 W 12 mm multi-cell microwave power GaAs MESFET

Based on the proposed many models for GaAs MESFET, we put forth a newly modified large-signal model for 4 W 12 mm multi-cell microwave power GaAs MESFET in this paper. The newly improved model presented here includes the analytical expressions of I/sub ds/(V/sub gs/, V/sub ds/) elements operating at microwave frequency in large signal. Also comparison with three kinds of the original formula proposed by Materka, Jastrzebski and Curtice, we found that the modified I/sub ds/ in here is more accuracy.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

自引率

0.00%

发文量