采用超临界干燥技术制备超低k (k=1.1)二氧化硅气凝胶膜

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854306

N. Kawakami, Y. Fukumoto, T. Kinoshita, K. Suzuki, Keita Inoue

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引用次数: 1

摘要

首次证明了多孔二氧化硅气凝胶膜作为低k介电介质。为了提高ULSI技术中传统介电自旋工艺的兼容性，提出了一种氢氧化铵蒸汽“片上”凝胶化技术。采用无毛细力的超临界干燥工艺，得到了k值为1.1的高孔隙率气凝胶膜。

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A super low-k (k=1.1) silica aerogel film using supercritical drying technique

A porous silica aerogel film as low-k dielectric is demonstrated for the first time. An "on-wafer" gelation technique in ammonium hydroxide vapor is developed to enhance the process compatibility with the conventional spin-on dielectric process in ULSI technology. By using a supercritical drying process, which is free from capillary forces, a high porosity aerogel film with a k value of 1.1 is obtained.

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Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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