基本模拟和数字电路与a-IGZO TFTs

2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) Pub Date : 2016-06-27 DOI:10.1109/SMACD.2016.7520741

P. Bahubalindruni, V. Tavares, P. Barquinha, R. Martins, E. Fortunato

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引用次数: 6

摘要

本文介绍了在正常环境下进行测量的a-IGZO TFTs的基本模拟和数字电路的特性。在这项工作中考虑的基本模块包括数字逻辑门，一个低功耗单级高增益放大器与电容自举和电平移位器/缓冲器。这些电路是氧化物tft模拟/混合信号集成电路设计中的重要功能模块。在低温(<;200°C)，它们可以在低成本的大面积柔性系统中找到潜在的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Basic analog and digital circuits with a-IGZO TFTs

This paper presents the characterization of fundamental analog and digital circuits with a-IGZO TFTs from measurements performed at normal ambient. The fundamental blocks considered in this work include digital logic gates, a low-power single stage high-gain amplifier with capcacitive bootstrapping and a level shifter/buffer. These circuits are important functional blocks in analog/Mixed signal IC design with oxide TFTs. Being fabricated at low temperature (<; 200 °C), they can find potential applications in low-cost large-area flexible systems.

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2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)

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