片上激光器的前景与应用。

IF 27.2 Q1 OPTICS
eLight Pub Date : 2023-01-01 DOI:10.1186/s43593-022-00027-x
Zhican Zhou, Xiangpeng Ou, Yuetong Fang, Emad Alkhazraji, Renjing Xu, Yating Wan, John E Bowers
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引用次数: 24

摘要

集成硅光子学作为一种可扩展、节能和环保的解决方案,在学术界和工业界都引发了投资的显著增加。该平台的核心是光源,光源本身一直是广泛研究和开发的重点。本文阐明并传达了我们对当前应用驱动的片上硅激光器不同方面的最新技术的看法。我们从两个角度来解决这个问题:设备级和系统级的观点。在前者中,从不同的材料系统到所选择的集成方法,探索了集成片上激光器所采取的不同路线。然后,讨论焦点转移到将光子集成电路(PIC)与片上激光器和有源器件相结合的系统范围应用,即光通信和互连,基于光相控阵的激光雷达,用于化学和生物分析的传感器,集成量子技术,最后是光学计算。通过利用集成硅光子学的无数固有吸引力特征,本文旨在激发将PICs与片上激光器结合在一起的进一步发展,但不限于这些应用,以获得实质性的性能提升,绿色解决方案和大规模生产。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Prospects and applications of on-chip lasers.

Prospects and applications of on-chip lasers.

Integrated silicon photonics has sparked a significant ramp-up of investment in both academia and industry as a scalable, power-efficient, and eco-friendly solution. At the heart of this platform is the light source, which in itself, has been the focus of research and development extensively. This paper sheds light and conveys our perspective on the current state-of-the-art in different aspects of application-driven on-chip silicon lasers. We tackle this from two perspectives: device-level and system-wide points of view. In the former, the different routes taken in integrating on-chip lasers are explored from different material systems to the chosen integration methodologies. Then, the discussion focus is shifted towards system-wide applications that show great prospects in incorporating photonic integrated circuits (PIC) with on-chip lasers and active devices, namely, optical communications and interconnects, optical phased array-based LiDAR, sensors for chemical and biological analysis, integrated quantum technologies, and finally, optical computing. By leveraging the myriad inherent attractive features of integrated silicon photonics, this paper aims to inspire further development in incorporating PICs with on-chip lasers in, but not limited to, these applications for substantial performance gains, green solutions, and mass production.

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CiteScore
30.40
自引率
0.00%
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