FTIR光谱法监测绝缘晶体中oh -杂质相互作用

Rosanna Capelletti, Paola Beneventi, Andrea Ruffini
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引用次数: 5

摘要

羟基离子是绝缘晶体中常见的杂质:通过与其他杂质相互作用,它产生新的配合物。羟基拉伸频率是对羟基环境非常敏感的探测。在9-300 K温度范围内,采用高分辨率(0.04 cm_1) FTIR光谱研究了碱卤化物、氟钙钛矿和硅钙钛矿中oh -阳离子杂质的相互作用。适当的热处理和同位素取代可以将拉伸模式吸收线分配给嵌入OH -的缺陷,并为它们提供可能的模型。弱泛音线监测的OH -拉伸模式的非调和效应在莫尔斯模型框架中得到了很好的描述。还检测到电不谐波。通过分析线位和线宽的温度依赖性,研究了OH -拉伸模式在不同缺陷中的声子耦合:在大多数情况下,单声子耦合模型解释了实验数据并提供了耦合声子频率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
FTIR Spectroscopy to Monitor OH-Impurity Interactions in Insulating Crystals

Hydroxyl ion is a common impurity in insulating crystals: by interacting with other impurities, it gives rise to new complexes. The OH-stretching frequency is a very sensitive probe of the hydroxyl environment. High resolution (0.04 cm_1) FTIR spectroscopy in the temperature range 9–300 K was applied to study the OH-cation impurity interaction in alkali halides, fluoroperovskites, and sillenites, suitable for optoelectronic applications. Proper thermal treatments and isotopic substitutions allowed to assign the stretching mode absorption lines to the defects in which OH is embedded and to supply possible models for them. Anharmonicity effect of the OH -stretching modes, monitored by weak overtone lines, were well described in the framework of the Morse model. Electric anharmonicity was also detected. The phonon coupling of the OH-stretching mode in different defects was studied by analysing the temperature dependence of the line-position and -width: in most cases the single-phonon coupling model accounted for the experimental data and supplied the coupled phonon frequencies.

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