Infrared Sensors, Devices, and Applications XIII最新文献

Multipolarized gold dipole nanoantennas for IR focal plane arrays: an infrared detection approach 用于红外焦平面阵列的多极化金偶极纳米天线:一种红外探测方法

Infrared Sensors, Devices, and Applications XIII Pub Date : 2023-10-06 DOI: 10.1117/12.2676106

J. R. Moreno García, J. Méndez-Lozoya, F. S. Chiwo González, M. Ramírez-Elías, F. G. González Contreras

引用次数: 0

Analysis of optical properties and reduced stain estimation in InAs/InGaAsSb quantum dot heterostructure with the variation of growth rate InAs/InGaAsSb量子点异质结构随生长速率变化的光学性质分析及减染估计

Infrared Sensors, Devices, and Applications XIII Pub Date : 2023-10-06 DOI: 10.1117/12.2677301

R. Saha, Farheen Shamim Ahmed Sabiha, Raveesh Gourishetty, M. Mantri, Ajay Kumar, S. Chakrabarti

{"title":"Analysis of optical properties and reduced stain estimation in InAs/InGaAsSb quantum dot heterostructure with the variation of growth rate","authors":"R. Saha, Farheen Shamim Ahmed Sabiha, Raveesh Gourishetty, M. Mantri, Ajay Kumar, S. Chakrabarti","doi":"10.1117/12.2677301","DOIUrl":"https://doi.org/10.1117/12.2677301","url":null,"abstract":"Conventional InAs/GaAs QD heterostructures are drawing the significant amount of interest among the worldwide researchers due to the excellent carrier confinement, high optical absorption, lower binding energy and high electron mobility. Also, impact of Sb incorporation in the capping layers provides the far-infrared wavelength emission window (1.3 μm to 1.56 μm). In current work, the effects of strain and composition on the optical properties of vertically uncoupled InAs/InGaAs quantum dots (QDs) capped with a thin layer combining Sb quaternary alloys are investigated experimentally. In this work, growth rate of the QDs formation is varied such as 0.05 ML/s, 0.07 ML/s and 0.1 ML/s for selective 28% Sb composition. The atomic force microscopic (AFM) measurement is performed on the grown quaternary capped QDs heterostructures and better dot uniformity and density is observed for selective growth rate sample. The out-plane X-ray diffraction (XRD) is measured for all the growth rate varying heterostructures. The strains are estimated from the corresponding XRD plots and such results confirm the defect free growth of heterostructures with reduced strain and high dot size for 0.05 ML/s growth rate sample. The photoluminescence (PL) is conducted to characterize the optical properties of the grown QDs heterostructures. The 20 K PL peak is gradually shifted from 1214 nm to1249 nm with the decreasing growth rate from 0.1 ML/s to 0.05 ML/s. Therefore, growth rate is optimized for InAs/InGaAsSb QD heterostructures, which will be exhibited the higher photo absorption and carrier lifetime and such heterostructures can be a promising candidate for III-V QD based opto-electronic devices.","PeriodicalId":406150,"journal":{"name":"Infrared Sensors, Devices, and Applications XIII","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131469521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimized infrared light response speed <80 ms by applying an interface buffer layer to Schottky components 通过在肖特基元件上应用接口缓冲层，优化了红外光响应速度<80 ms

Infrared Sensors, Devices, and Applications XIII Pub Date : 2023-10-06 DOI: 10.1117/12.2677850

Zih-Chun Su, Yu-Ru Liu, Po-Hsien Chiang, Du-Ting Cheng, D. Sinha, Jian-Hong Lin, Ching-Fuh Lin

引用次数: 0

Case studies on sensitivity of diffuse reflectance spectra for IR absorbing materials on substrates 基底上红外吸收材料漫反射光谱灵敏度的实例研究

Infrared Sensors, Devices, and Applications XIII Pub Date : 2023-10-06 DOI: 10.1117/12.2675310

J. Duncan, R. Viger, S. Ramsey, T. Mayo, S. Lambrakos

引用次数: 0

Growth of p-CuInSe2/n-Si heterojunction for near-infrared photodetection 近红外光探测用p-CuInSe2/n-Si异质结的生长

Infrared Sensors, Devices, and Applications XIII Pub Date : 2023-10-06 DOI: 10.1117/12.2676320

Sungtae Kim, Temujin Enkhbat, Sang-hun Lee, Jae‐Hyung Jang

引用次数: 0

Investigation of strain profile and band-alignment study in InAs/GaAsSb quantum dot heterostructure with varying Sb content 不同Sb含量的InAs/GaAsSb量子点异质结构的应变分布及能带对准研究

Infrared Sensors, Devices, and Applications XIII Pub Date : 2023-10-06 DOI: 10.1117/12.2677306

Farheen Shamim Ahmed Sabiha, Ravindra Kumar, Raveesh Gourishetty, R. Saha, M. Mantri, Ajay Kumar, S. Chakrabarti

{"title":"Investigation of strain profile and band-alignment study in InAs/GaAsSb quantum dot heterostructure with varying Sb content","authors":"Farheen Shamim Ahmed Sabiha, Ravindra Kumar, Raveesh Gourishetty, R. Saha, M. Mantri, Ajay Kumar, S. Chakrabarti","doi":"10.1117/12.2677306","DOIUrl":"https://doi.org/10.1117/12.2677306","url":null,"abstract":"The current work represents the influence of Sb composition on strain profiles, band alignment of InAs/GaAsSb Stranski-Krastanov (SK) quantum dots (QD) heterostructure. A single layer InAs/GaAs SK QD heterostructure has been utilised as a reference structure (sample A). Three different structures B, C and D are chosen with the Sb composition of 10%, 14% and 22% in the capping layer on the InAs QDs. The strain distribution of InAs quantum dots with GaAs1-xSbx capping has been investigated in detail by using Nextnano simulation software. The transition from type-I to type-II band alignment occurs after 14% Sb incorporation. The effect of variation in the Sb component on the strain profile is analysed in terms of hydrostatic and biaxial strain. In the strain profiles, the biaxial strain increases significantly from samples A to D, whereas the hydrostatic strain is reducing from samples A to D inside the QD region simultaneously. Further, low temperature photoluminescence (PL) has been performed to validate the simulated results. The PL peak is originated at ~1030 nm for sample A, which shows a good agreement with the simulated value ~1071 nm. With the similar dot size, the simulated PL peaks are found at 1116, 1284, 1675 nm for samples B, C and D, respectively. A slight variation is observed in the experimentally obtained PL peaks and simulated one due to the incorporation of higher Sb content. With the higher Sb content, relatively more defects are generated, which affects the experimental PL peaks. Also, a red shift is found in the PL peaks from ~1030 nm to ~1213 nm at 19K and it gives an insight to develop various optoelectronic devices using such QDs heterostructure.","PeriodicalId":406150,"journal":{"name":"Infrared Sensors, Devices, and Applications XIII","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130110686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploring the crystal field effect in magnetoplumbite phosphor for diverse emission wavelengths from red to SWIR 探索从红光到SWIR不同发射波长下磁铅石荧光粉的晶体场效应

Infrared Sensors, Devices, and Applications XIII Pub Date : 2023-10-06 DOI: 10.1117/12.2676335

Y. Park, Ha Jun Kim, W. Im

引用次数: 0

Growth of 6.2 Å semiconductor topological materials on lattice engineered virtual substrates 6.2 Å半导体拓扑材料在晶格工程虚拟衬底上的生长

Infrared Sensors, Devices, and Applications XIII Pub Date : 2023-10-06 DOI: 10.1117/12.2675731

H. Haugan, A. Hilton, K. Mahalingam, A. Neal, S. Elhamri, R. Bedford, K. Eyink

{"title":"Growth of 6.2 Å semiconductor topological materials on lattice engineered virtual substrates","authors":"H. Haugan, A. Hilton, K. Mahalingam, A. Neal, S. Elhamri, R. Bedford, K. Eyink","doi":"10.1117/12.2675731","DOIUrl":"https://doi.org/10.1117/12.2675731","url":null,"abstract":"To test whether conventional infrared materials can be used to control the electronic wavefunction to form a topological state, a 6.2 Å metamorphic (InAs/InGaSb/InAs) quantum well (QW) absorber with ~60 meV of hybridization gap (Δ) was investigated. We developed a thick metamorphic InGaSb buffer layer on GaAs wafer to create a 6.2 Å lattice constant for the QW growths. The lattice constant of virtual substrates (VSs) was very close to the target value of 6.2 Å, however the resulting crystalline quality of the VSs was inefficient for topological insulator. The cross-sectional transmission electron microscopy image revealed that the dislocation density in the InGaSb buffer layer was high closer to the GaAs substrate and gradually reduced upon continued growth. However some mismatch-related defects were propagated into the absorber region, consequently degraded the transport quality of absorber. The QW absorber grown on VS had a low mobility. The mobility was dramatically improved by selecting pseudomorphic QW or superlattice absorber with a small Δ that was grown on a lattice-matched GaSb substrate. Hence, in order for the proposed 6.2 Å materials to be viable for sensing applications, a critical effort will be the development of better optimized metamorphic buffers for the design or of highlyhybridized psedomorphic designs that can be grown on lattice-matched substrates.","PeriodicalId":406150,"journal":{"name":"Infrared Sensors, Devices, and Applications XIII","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126522648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characterization of a Shack-Hartmann type wavefront sensor for its use in an experimental aberrometer 用于实验像差计的Shack-Hartmann型波前传感器的特性

Infrared Sensors, Devices, and Applications XIII Pub Date : 2023-10-06 DOI: 10.1117/12.2676429

Cristian M. Medina Coca, Brandon D. Sánchez Valencia, Emerson A. Diaz Gonzalez, Citlalli Almaguer Gomez, José L. Magaña-Chávez, J. Medina-Márquez, S. Balderas-Mata

引用次数: 0