{"title":"Nanoscale Optical Patterning of Amorphous Silicon Carbide for High-Density Data Archiving","authors":"T. Tsvetkova","doi":"10.5772/intechopen.88750","DOIUrl":"https://doi.org/10.5772/intechopen.88750","url":null,"abstract":"The work presented here is related to some developments in providing a new generation ultrastable (>100 years), ultrahigh density (>1 Tbit/sq.in.) data storage materials for archival applications. The chosen material to write nanoscale data by finely focused ion beams is hydrogenated amorphous silicon carbide (a-SiC:H) films. Wide bandgap a-SiC:H has been chosen for its appropriate optical, chemical and mechanical properties. Ga + was prefered as the implant species for the focused ion beam (FIB) implantation due to its widespread uses in FIB equipment and its modifying effects on the amorphous silicon carbide target. A range of a-SiC:H film samples have been FIB patterned under different implantation conditions for this study. The emphasis in these investigations was the influence of different substrate temperatures on the patterning process. The effects of further annealing of room temperature implanted samples were also studied. The FIB patterned samples under different conditions were analysed using near-field techniques, like atomic force microscopy (AFM), to define optimum implantation parameters for archival data storage applications. Using the established optimal conditions for the FIB patterning process of a-SiC:H films, it is expected to achieve the aimed ultrahigh density and stability with this novel data storage method for archival applications.","PeriodicalId":391660,"journal":{"name":"Multilayer Thin Films - Versatile Applications for Materials Engineering","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121731918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Spin Transport in Nanowires Synthesized Using Anodic Nanoporous Alumina Films","authors":"Supriyo Bandyopadhyay","doi":"10.5772/intechopen.86581","DOIUrl":"https://doi.org/10.5772/intechopen.86581","url":null,"abstract":"Spin transport in restricted dimensionality structures (e.g., nanowires) have unusual features not observed in bulk samples. One popular method to synthesize nanowires of different materials is to electrodeposit them selectively within nano-meter diameter pores in anodic alumina films. Different materials can be sequentially deposited within the pores to form nanowire “spin valves” consisting of a spacer nanowire sandwiched between two ferromagnetic nanowires. This construct allows one to study spin transport in the spacer nanowire, with the ferromagnetic contacts acting as spin injector and detector. Some of our past work related to the study of spin transport in organic and inorganic nanowire spin valves produced using nanoporous anodic alumina films is reviewed in this chapter.","PeriodicalId":391660,"journal":{"name":"Multilayer Thin Films - Versatile Applications for Materials Engineering","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128368967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Crystalline Silicon Nitride Films on Si(111): Growth Mechanism, Surface Structure and Chemistry down to Atomic Scale","authors":"S. Gangopadhyay","doi":"10.5772/intechopen.89412","DOIUrl":"https://doi.org/10.5772/intechopen.89412","url":null,"abstract":"A detailed investigation of the growth mechanism of ultra-thin silicon nitride (Si3N4) films on Si(111) substrates, their structure, morphology and surface chemistry down to atomic scale have been investigated using various surface analytical techniques such as low energy electron diffraction (LEED), scanning tunneling microscopy (STM) and ESCA microscopy. A radio frequency N2 plasma source from Epi Uni-bulb has been used for the nitridation of atomically clean Si(111) surfaces. The substrate temperatures during the nitridation process were ranging from 600–1050°C and the plasma exposure times were varied from 5 s for initial nucleation up to 45 min for saturation thickness. The initial stage of N nucleation on Si(111), how the structure and morphology of the nitride films depend on thickness and temperature, surface atomic reconstructions and the nitride film chemical composition are discussed here. All findings are explained in terms of thermally activated inter-diffusion of Si and N atoms as well as the surface adatom diffusion/ mobility.","PeriodicalId":391660,"journal":{"name":"Multilayer Thin Films - Versatile Applications for Materials Engineering","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115243918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}