2017 IEEE International Conference on IC Design and Technology (ICICDT)最新文献_第2页

Wideband inductorless CMOS RF front-end for LTE receivers 用于LTE接收器的宽带无电感CMOS射频前端

2017 IEEE International Conference on IC Design and Technology (ICICDT) Pub Date : 2017-05-23 DOI: 10.1109/ICICDT.2017.7993505

Eman Badr, H. Shawkey, Y. Ismail, A. Zekry

引用次数: 5

NRAM status and prospects NRAM的现状与展望

2017 IEEE International Conference on IC Design and Technology (ICICDT) Pub Date : 2017-05-23 DOI: 10.1109/ICICDT.2017.7993504

D. Gilmer, T. Rueckes, L. Cleveland, Darlene Viviani

{"title":"NRAM status and prospects","authors":"D. Gilmer, T. Rueckes, L. Cleveland, Darlene Viviani","doi":"10.1109/ICICDT.2017.7993504","DOIUrl":"https://doi.org/10.1109/ICICDT.2017.7993504","url":null,"abstract":"Advanced memory technology based on carbon nanotubes (NRAM) has been shown to possess desired properties for implementation in a host of integrated systems due to demonstrated advantages of its operation including high speed (Nanotubes can switch state in picoseconds), high endurance (over a trillion), and low power (with essential zero standby power). The applicable integrated systems have markets that will see compound annual growth rates (CAGR) of over 62% between 2018 and 2023, with an embedded systems CAGR of 115% in 2018 to 2023 [1]. These opportunities for NRAM technology are helping drive the realization of a shift from silicon to a carbon-based memory. NRAM is made up of an interlocking matrix of carbon nanotubes, either touching or slightly separated, leading to low or higher resistance states respectively. The small movement of atoms, as opposed to electrons for traditional memories, renders NRAM with a more robust endurance and high temperature retention/operation which, along with high speed/low power, is expected to blossom in this memory technology to be a disruptive replacement for the current status quo of DRAM (dynamic RAM), SRAM (static RAM), and NAND flash memories.","PeriodicalId":382735,"journal":{"name":"2017 IEEE International Conference on IC Design and Technology (ICICDT)","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127488670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Fluids energy harvesting system with low cut-in velocity piezoelectric MEMS 低切割速度压电MEMS流体能量收集系统

2017 IEEE International Conference on IC Design and Technology (ICICDT) Pub Date : 2017-05-23 DOI: 10.1109/ICICDT.2017.7993506

G. E. Biccario, M. Vittorio, S. D'Amico

{"title":"Fluids energy harvesting system with low cut-in velocity piezoelectric MEMS","authors":"G. E. Biccario, M. Vittorio, S. D'Amico","doi":"10.1109/ICICDT.2017.7993506","DOIUrl":"https://doi.org/10.1109/ICICDT.2017.7993506","url":null,"abstract":"Energy harvesting from environmental vibrations has established as an effective and green solution for electric energy production. In particular, fluid flows like the wind represent a steady and ubiquitous energy source. Traditional fluids harvesters are based on huge and bulky infrastructures like turbines, with a high environmental impact and a quite high cut-in speed (higher than 3÷4 m/s) for the fluids to be harvested. Transducers based on piezo-electric devices in the micrometric scale have pushed this value down by about one order of magnitude. The development of nanostructured piezo-electric transducers in the submicrometric scale offers a new generation of devices capable of converting the energy of very slow fluids (velocities lower than 1 m/s), like human breath, thanks to their high flexibility. The electronic interface circuit demanded of harvesting the energy from such a transducer is called to sense output signals of hundreds of millivolts with power equal to few microwatts or less. Active architectures must be employed even though they suffer for a start-up phase and the power demand. For building up the circuit supply voltage in few hundreds of milliseconds with the mentioned input power, we propose the employment of two storage devices so that the powering of interface circuit is decoupled from the energy storing. For harvesting all the peaks of the input waveform down to 50 mV, a detector based on current sensing and offset rejection through AC coupling is proposed.","PeriodicalId":382735,"journal":{"name":"2017 IEEE International Conference on IC Design and Technology (ICICDT)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130797367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

SRAM designs for 5nm node and beyond: Opportunities and challenges 5nm及以上节点SRAM设计:机遇与挑战

2017 IEEE International Conference on IC Design and Technology (ICICDT) Pub Date : 2017-05-23 DOI: 10.1109/ICICDT.2017.7993502

T. H. Bao, S. Sakhare, J. Ryckaert, A. Spessot, D. Verkest, A. Mocuta

引用次数: 6

Dadda Multiplier designs using memristors 使用忆阻器的倍增器设计

2017 IEEE International Conference on IC Design and Technology (ICICDT) Pub Date : 2017-05-23 DOI: 10.1109/ICICDT.2017.7993521

Lauren Guckert, E. Swartzlander

引用次数: 2

Layout engineering to suppress hysteresis of negative capacitance FinFET 抑制负电容FinFET迟滞的布局工程

2017 IEEE International Conference on IC Design and Technology (ICICDT) Pub Date : 2017-05-23 DOI: 10.1109/ICICDT.2017.7993498

Eunah Ko, Jaesung Jo, C. Shin, B. Nguyen

引用次数: 0

Interfacial transition layer in thermally grown SiO2 film on 4H-SiC 4H-SiC表面热生长SiO2薄膜中的界面过渡层

2017 IEEE International Conference on IC Design and Technology (ICICDT) Pub Date : 2017-05-01 DOI: 10.1109/ICICDT.2017.7993525

R. Hasunuma

引用次数: 1

Integrated electrical sensing for high-throughput bioanalytics 用于高通量生物分析的集成电传感

2017 IEEE International Conference on IC Design and Technology (ICICDT) Pub Date : 2017-05-01 DOI: 10.1109/ICICDT.2017.7993520

C. Guiducci

引用次数: 0

Circuit-level simulation methodology for Random Telegraph Noise by using Verilog-AMS 用Verilog-AMS进行随机电报噪声的电路级仿真方法

2017 IEEE International Conference on IC Design and Technology (ICICDT) Pub Date : 2017-05-01 DOI: 10.1109/ICICDT.2017.7993526

Takuya Komawaki, M. Yabuuchi, Ryo Kishida, J. Furuta, Takashi Matsumoto, Kazutoshi Kobayashi

引用次数: 4

Dedicated technology threshold voltage tuning for 6T SRAM beyond N7 N7以上6T SRAM阈值电压调优专用技术

2017 IEEE International Conference on IC Design and Technology (ICICDT) Pub Date : 2017-05-01 DOI: 10.1109/ICICDT.2017.7993503

Mohit Kumar Gupta, P. Weckx, S. Cosemans, P. Schuddinck, R. Baert, D. Jang, Y. Sherazi, P. Raghavan, A. Spessot, A. Mocuta, W. Dehaene

引用次数: 1