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2012 24th International Symposium on Power Semiconductor Devices and ICs最新文献

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Power electronics - key to the next level of automotive electrification 电力电子-汽车电气化下一阶段的关键
2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI: 10.1109/ISPSD.2012.6229011
B. Hellenthal
{"title":"Power electronics - key to the next level of automotive electrification","authors":"B. Hellenthal","doi":"10.1109/ISPSD.2012.6229011","DOIUrl":"https://doi.org/10.1109/ISPSD.2012.6229011","url":null,"abstract":"Power electronic semiconductors from the viewpoint of an automotive OEM. Improving efficiency, especially in the “hidden” utilization of power electronic semiconductors, defines the next level of automotive electrification. AUDI breaks new ground in the semiconductor industry by strongly influencing the future of power electronics. Next to new products and functions, new forms of collaboration, networks and partnerships are needed.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117323579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Specific features of SiC-IGBT with 13kV switching 13kV开关SiC-IGBT的具体特点
2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI: 10.1109/ISPSD.2012.6229073
M. Ueno, M. Miyake, M. Miura-Mattausch
{"title":"Specific features of SiC-IGBT with 13kV switching","authors":"M. Ueno, M. Miyake, M. Miura-Mattausch","doi":"10.1109/ISPSD.2012.6229073","DOIUrl":"https://doi.org/10.1109/ISPSD.2012.6229073","url":null,"abstract":"Switching behavior of a 4H-SiC IGBT is discussed considering the punch-through effect of the base layer. The switching behavior is investigated with a mixed-mode simulation of a 2D-numerical device simulator, where extremely abrupt switching characteristics are observed at voltage ratings of 6.5kV and 13kV. The origin is explained by the carrier dynamics under the punch-through condition. As a proof of this explanation, the switching behaviors are reproduced by circuit simulation with the compact IGBT model HiSIM-IGBT, where the punch-through behavior is considered.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132408618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A novel double-well isolation structure for high voltage ICs 一种新型高压集成电路双井隔离结构
2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI: 10.1109/ISPSD.2012.6229056
Weifeng Sun, Jing Zhu, Qinsong Qian, Bo Hou, Wei Su, Sen Zhang
{"title":"A novel double-well isolation structure for high voltage ICs","authors":"Weifeng Sun, Jing Zhu, Qinsong Qian, Bo Hou, Wei Su, Sen Zhang","doi":"10.1109/ISPSD.2012.6229056","DOIUrl":"https://doi.org/10.1109/ISPSD.2012.6229056","url":null,"abstract":"A novel double-well (DW) divided RESURF isolation structure featuring two slender N-Well regions at N--Well, aiming at improving the off-state breakdown voltage for high voltage IC (HVIC) is proposed in this paper. The N-Well regions in the presented structure efficiently prevent N--Well which used for the drift region of the Lateral Double Diffused MOSFET (LDMOS) from depleting with P-Well, so as to maintain the RESURF condition. The experiment results show that the proposed structure exhibits the breakdown voltage of 760V which has an improvement of 15% compared with the conventional structure.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130924448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A high-speed silicon FET for efficient DC-DC power conversion 用于高效DC-DC功率转换的高速硅场效应管
2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI: 10.1109/ISPSD.2012.6229029
G. Loechelt, G. Grivna, L. Golonka, C. Hoggatt, H. Massie, F. De Pestel, N. Martens, S. Mouhoubi, J. Roig, T. Colpaert, P. Coppens, F. Bauwens, E. De Backer
{"title":"A high-speed silicon FET for efficient DC-DC power conversion","authors":"G. Loechelt, G. Grivna, L. Golonka, C. Hoggatt, H. Massie, F. De Pestel, N. Martens, S. Mouhoubi, J. Roig, T. Colpaert, P. Coppens, F. Bauwens, E. De Backer","doi":"10.1109/ISPSD.2012.6229029","DOIUrl":"https://doi.org/10.1109/ISPSD.2012.6229029","url":null,"abstract":"A novel silicon device architecture for DC-DC power conversion is reported. Efficient switching at high frequencies (1-5 MHz) is achieved by simultaneously reducing gate charge, reverse capacitance, and gate resistance while still maintaining good on-state resistance and off-state breakdown voltage. Power efficiencies in excess of 88% were realized in a synchronous buck converter running at 1.3 MHz.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131200851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si structures AlGaN/GaN-on-Si结构的垂直泄漏/击穿机制
2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI: 10.1109/ISPSD.2012.6229069
Chunhua Zhou, Q. Jiang, Sen Huang, K. J. Chen
{"title":"Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si structures","authors":"Chunhua Zhou, Q. Jiang, Sen Huang, K. J. Chen","doi":"10.1109/ISPSD.2012.6229069","DOIUrl":"https://doi.org/10.1109/ISPSD.2012.6229069","url":null,"abstract":"In this paper, we studied the vertical leakage/breakdown mechanisms in AlGaN/GaN structures grown on low resistivity p-type (111) Si substrate by temperature-dependent current-voltage measurements. We suggested that the top-to-substrate vertical leakage/breakdown is dominated by the space-charge-limited current (SCLC) conduction mechanism involving both acceptor and donor traps in buffer/transition layer. Based on temperature-dependent transient backgating measurements, the acceptor level and donor level were determined to be at EV+543 meV and EC-616 meV, respectively.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"6 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114019717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage 超低导通电压的快速600 v串联引脚肖特基(TPS)整流器
2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI: 10.1109/ISPSD.2012.6229100
W. Hsu, F. Udrea, Win-Pin Chang, Max Chen
{"title":"A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage","authors":"W. Hsu, F. Udrea, Win-Pin Chang, Max Chen","doi":"10.1109/ISPSD.2012.6229100","DOIUrl":"https://doi.org/10.1109/ISPSD.2012.6229100","url":null,"abstract":"The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-layer, leading to a superior forward performance than the conventional diodes. In addition, due to the benefit of moderate hole injection from the p-layer, the TPS offers a better trade-off between the on-state voltage and the switching speed. The active p-layer also helps to stabilise the Schottky contact, and hence the electrical data distributions are more concentrated. Regarding the floating p-layer in the termination region, its purpose is to reduce the peak electric fields, and the TPS demonstrates a high breakdown voltage with a compact termination width, less than 70% of the state-of-the-art devices on the market. Experimental results have shown that the 600-V TPS rectifier has an ultra-low on-state voltage of 0.98 V at 250 A/cm2, a fast turn-off time of 75 ns by the standard RG1 test (IF=0.5A, IR=1A, and IRR=0.25A) and a breakdown voltage over 720 V. It is noteworthy that the p-layers in the active and termination regions can be formed at no extra cost for the use of self-alignment process.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123847429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Scattering parameter approach to power MOSFET design for EMI 电磁干扰功率MOSFET设计中的散射参数方法
2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI: 10.1109/ISPSD.2012.6229053
M. Tsukuda, Keiichiro Kawakami, Ichiro Omura
{"title":"Scattering parameter approach to power MOSFET design for EMI","authors":"M. Tsukuda, Keiichiro Kawakami, Ichiro Omura","doi":"10.1109/ISPSD.2012.6229053","DOIUrl":"https://doi.org/10.1109/ISPSD.2012.6229053","url":null,"abstract":"Electromagnetic interference (EMI) noise by avalanche oscillations is the major barrier to improve power device performance. Especially the oscillations of three-terminal devices are more complex than two-terminal devices in point of the mutual relationship between devices and external circuit. Scattering parameter (S-parameter) under avalanche condition is obtained to establish stable-unstable criterion with stability factor (K-factor). The stable-unstable criterion clearly indicates the unstable frequency range with each change in MOSFET design. In addition the oscillation mechanism on power MOSFET is modeled with junction capacitance, which is the same as that of diode. For EMI suppression, resonant frequency of external circuit has to be different from unstable frequency of MOSFETs.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121850846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Reduction in Shottky barrier height of AlGaN-based SBD with in-situ deposited silicon carbon nitride (SiCN) cap layer 原位沉积氮化硅碳(SiCN)帽层降低algan基SBD的Shottky势垒高度
2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI: 10.1109/ISPSD.2012.6229070
Jae-Hoon Lee, Y. Kwak, Jae-Hyun Jeong, Heon-Bok Lee, W. Lim, Ki-Se Kim, Ki‐Won Kim, Dong-Suck Kim, Jung-Hee Lee
{"title":"Reduction in Shottky barrier height of AlGaN-based SBD with in-situ deposited silicon carbon nitride (SiCN) cap layer","authors":"Jae-Hoon Lee, Y. Kwak, Jae-Hyun Jeong, Heon-Bok Lee, W. Lim, Ki-Se Kim, Ki‐Won Kim, Dong-Suck Kim, Jung-Hee Lee","doi":"10.1109/ISPSD.2012.6229070","DOIUrl":"https://doi.org/10.1109/ISPSD.2012.6229070","url":null,"abstract":"AlGaN/GaN Schottky barrier diodes (SBDs) with and without in-situ silicon carbon nitride (SiCN) cap layer were investigated. The fabricated SBD with SiCN cap layer exhibited improved electrical characteristics, such as the forward turn on voltage of about 0.7 V, the forward current of 4.1 A at 1.5 V, and the reverse breakdown voltage of 630 V, compared to the corresponding values of 0.8 V, 3.8 A, and 580 V for the reference SBD without the SiCN cap layer. This improvement in the device performance of the SiCN-SBD is because the in-situ SiCN cap layer not only lowers the barrier height, but also effectively passivates the surface of the device with better surface morphology.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124789654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Bonding wire current measurement with tiny film current sensors 用微型薄膜电流传感器测量焊线电流
2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI: 10.1109/ISPSD.2012.6229079
H. Hirai, Y. Kasho, M. Tsukuda, I. Omura
{"title":"Bonding wire current measurement with tiny film current sensors","authors":"H. Hirai, Y. Kasho, M. Tsukuda, I. Omura","doi":"10.1109/ISPSD.2012.6229079","DOIUrl":"https://doi.org/10.1109/ISPSD.2012.6229079","url":null,"abstract":"Bonding wire current measurement technique has been highly desired to analyze failure phenomena, such as short circuit and avalanche destruction of IGBT and power diode. This paper challenged to measure bonding wire current distribution in an IGBT module with the multiple tiny film current sensors and the digital calculation technique. The authors successfully measured bonding wire current under a single shot measurement.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123103707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs 缓冲成分对高压AlGaN/GaN hfet动态导通电阻的影响
2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI: 10.1109/ISPSD.2012.6229092
O. Hilt, Eldad Bahat Treidel, E. Cho, S. Singwald, J. Wurfl
{"title":"Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs","authors":"O. Hilt, Eldad Bahat Treidel, E. Cho, S. Singwald, J. Wurfl","doi":"10.1109/ISPSD.2012.6229092","DOIUrl":"https://doi.org/10.1109/ISPSD.2012.6229092","url":null,"abstract":"Switching experiments with normally-off GaN-HFETs using a carbon-doped GaN buffer or an AlGaN buffer showed very different magnitudes of increased dynamic on-state resistance. The dynamic on-state resistance is analyzed for variations in buffer composition and set into relation to the buffer voltage-blocking strength. Also, the impact of p-GaN gate normally-off and Schottky-gate normally-on device technologies on the dispersion is studied. It is concluded that a buffer with less trap sites and lower breakdown strength is more favorable for high-voltage switching than a buffer with incorporated acceptors to increase the buffer breakdown strength.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123342212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 45
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