Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels最新文献_第10页

Analysis And Implementation Of An Optical Processor Employing Cascaded VLSI/FLC Spatial Light Modulators And Smart Pixel Detector Arrays 采用级联VLSI/FLC空间光调制器和智能像素检测器阵列的光处理器的分析与实现

Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels Pub Date : 1992-07-29 DOI: 10.1109/LEOSST.1992.697482

R. Turner, D. Jared, G. Sharp, K. Johnson

引用次数: 0

Vstep Optoelectronic Devices And Their Modules Vstep光电器件及其模块

Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels Pub Date : 1992-07-29 DOI: 10.1109/LEOSST.1992.697489

S. Kawai, K. Kasahara, K. Kubota

引用次数: 6

Photonic ATM Switching Systems 光子ATM交换系统

Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels Pub Date : 1992-07-29 DOI: 10.1109/LEOSST.1992.697409

K. Yukimatsu

引用次数: 1

A Broadband Variable Time Delay System For Transversal Filtering And Phased Array Receive Applications 用于横向滤波和相控阵接收的宽带可变时延系统

Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels Pub Date : 1992-07-29 DOI: 10.1109/LEOSST.1992.697397

D. Norton, E. N. Toughlian, H. Zmuda

引用次数: 0

Optically Controllable Pixel Based On Vertical To Surface Transmission Electro-photonic Devices Using Four-terminal Pnpn Structure 基于四端Pnpn结构的垂直到表面传输光电器件的光学可控像素

Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels Pub Date : 1992-07-29 DOI: 10.1109/LEOSST.1992.697490

I. Ogura, A. Yasuda, M. Sugimoto, T. Numai, M. Nishio, K. Kasahara

{"title":"Optically Controllable Pixel Based On Vertical To Surface Transmission Electro-photonic Devices Using Four-terminal Pnpn Structure","authors":"I. Ogura, A. Yasuda, M. Sugimoto, T. Numai, M. Nishio, K. Kasahara","doi":"10.1109/LEOSST.1992.697490","DOIUrl":"https://doi.org/10.1109/LEOSST.1992.697490","url":null,"abstract":"Surface-Emitting-Laser-based optical functional devices have promising features for photonic switching and optical data processing. All photonic switching networks need control signals to be sent into the nodes to allow for appropriate routing of traffic.') Control injection, thus, must be taken into consideration more in photonic switches. An optical self-routing switch has been proposed where a node consists of pnpn-Vertical to Surface Transmission ElectroPhotonic Devices with Vertical Cavities (VC-VSTEPS).~) The routing for optical data signals are controlled by an optical pilot signal placed at the head of the optical data signals. However, this switch still needs electric timing signals to be applied to the VC-VSTEPs, which might cause electromagnetic interferences among a large number of internal electric lines, and a delay in the timing signals due to parasitic capacitances. Therefore, it is desirable that the timing signals are further injected optically. This paper reports on VSTEP-based pixels aiming for optically controllable nodes. The pixel consists of a VSTEP using a four-terminal pnpn structure with two distributed Bragg reflectors (DBRs) (Fig. 1). The fabrication process includes two-step mesa etching: 1) to the n-doped gate layer, and 2) to the n-doped DBR layer. The n- and p-gate electrodes are formed on the second mesa with Zn diffusion for the p-gate. In comparison to twoterminal VC-VSTEPs3), the structure provides variable switching voltage characteristics and gate turn-off operation by means of carrier injectiodextraction through the gate terminals. Also, this structure allows the formation of a hetero-junction bipolar transistor (HBT), or a hetero-junction photo-transistor (HPT) together with the pnpn-structure. These two features, in combination, expand flexibility in device configuration to meet the demands of photonic switching and processing systems. As an example, a pixel has been demonstrated for an optical self-routing switch with optical gating and optical reset operations. Figure 2 shows an equivalent circuit of the pixel. When the optical gate pulse is incident on the HFT1, current is injected to the pnpn device, resulting in a reduction of switching voltage, and allowing turn-on by the input optical pulse. Applying the gate pulses to the pixels with proper time delays, the pilot signal can select one pixel in which the pilot signal coincides with the gate signal. \"2 is used for the optical reset. The optical reset pulse incident on the HPT2 removes the stored charge in the pnpn-device through the ngate. Figure 3 shows voltage-current and light-current characteristics of the fabricated device with various current injections from the n-gate. The switching voltage without n-gate injection is 3.8 V and the threshold current is 35 mA. A common-emitter current gain of 180 is obtained for the npn-HPT using an n-gate as a collector and a cathode as an emitter. Figure 4(a) shows the optical gating operation. A bias voltag","PeriodicalId":355341,"journal":{"name":"Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114389791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

A Silicon Waferboard Approach To Optoelectronic Packaging 光电封装的矽晶圆板方法

Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels Pub Date : 1992-07-29 DOI: 10.1109/LEOSST.1992.697471

M. Tabasky, T. Fitzgerald, E. Bulat, A. Silletti, P. Melman, B. Foley, R. Boudreau, C. Armiento, P. Haugsjaa

引用次数: 1

Low-loss, Ultra-compact Monolithic Integration Of High-speed Polarization-diversity Photodetectors 高速偏振分集光电探测器的低损耗、超紧凑单片集成

Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels Pub Date : 1992-07-29 DOI: 10.1109/LEOSST.1992.697455

R. Deri, J. Soole, A. Scherer, C. Caneau, A. Góźdź, N. Andreadakis, V. Shah, L. Curtis, J. Song, R. Hawkins

引用次数: 0

High Performance Hybrid Optoelectronic Terminal Components For Optical Interconnect 用于光互连的高性能混合光电终端元件

Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels Pub Date : 1992-07-29 DOI: 10.1109/LEOSST.1992.697485

A. Moseley, M. Goodwin

引用次数: 0

Self-pulsating Laser Diodes As Tunable Transmitters For Subcarrier Multiple-access Networks 自脉冲激光二极管作为子载波多址网络的可调谐发射机

Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels Pub Date : 1992-07-29 DOI: 10.1109/LEOSST.1992.697430

J. B. Georges, E. Chuang, K. Y. Lau

引用次数: 0

Flip-chip, Self-aligned, Optoelectronic Transceiver Module 倒装芯片，自对准，光电收发模块

Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels Pub Date : 1992-07-29 DOI: 10.1109/LEOSST.1992.697470

K. Jackson, E. B. Flint, M. Cina, D. Lacey, J. Trewhella, P. Buchmann, C. Harder, P. Vettiger

引用次数: 3