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2015 IEEE Summer Topicals Meeting Series (SUM)最新文献

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Stimulated Brillouin scattering in photonic integrated circuits: Fundamentals and applications 光子集成电路中的受激布里渊散射:基本原理和应用
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248205
B. Eggleton
{"title":"Stimulated Brillouin scattering in photonic integrated circuits: Fundamentals and applications","authors":"B. Eggleton","doi":"10.1109/PHOSST.2015.7248205","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248205","url":null,"abstract":"On-chip Stimulated Brillouin scattering offers potential for integration of a variety of important photonic functionalities. Here, we demonstrate selectively enhancing and inhibiting nonlinear interactions on a chip by exploiting the frequency dependence of the optical density-of-states near the edge of a photonic-bandgap.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121442486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electronic states of two-dimensional materials and heterostructures 二维材料和异质结构的电子态
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248162
R. Feenstra
{"title":"Electronic states of two-dimensional materials and heterostructures","authors":"R. Feenstra","doi":"10.1109/PHOSST.2015.7248162","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248162","url":null,"abstract":"In this paper, the electronic states of two-dimensional (2D) materials and heterostructures are discussed, comparing theoretical predictions and experimental results for vertical tunneling devices and other structures. For graphene-insulator-graphene (GIG) junctions, predicted current-voltage characteristics display a resonant peak arising from momentum conservation in the junctions.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116607858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-reflection Si/SiO2 Bragg reflector via membrane transfer printing 膜转移印花高反射Si/SiO2 Bragg反射器
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248261
Minkyu Cho, Jung‐Hun Seo, Jaeseong Lee, Deyin Zhao, Weidong Zhou, Z. Ma
{"title":"High-reflection Si/SiO2 Bragg reflector via membrane transfer printing","authors":"Minkyu Cho, Jung‐Hun Seo, Jaeseong Lee, Deyin Zhao, Weidong Zhou, Z. Ma","doi":"10.1109/PHOSST.2015.7248261","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248261","url":null,"abstract":"High reflection Si/SiO2 quarter-wavelength Distributed Bragg Reflector (DBR) is reported. The structure is composed of alternate single crystal Si and thermally-grown SiO2. Si Nanomembrane (Si NM) transfer and subsequent thermal oxidation achieves high reflection throughout the broad IR spectrum.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116653593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The impact of phase conjugation on the nonlinear-Shannon limit: The difference between optical and electrical phase conjugation 相位共轭对非线性香农极限的影响:光学相位共轭与电学相位共轭的区别
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248271
Andrew D. Ellis, Son Thai Le, M. Al-Khateeb, S. Turitsyn, G. Liga, D. Lavery, Tianhua Xu, Polina Bayvel
{"title":"The impact of phase conjugation on the nonlinear-Shannon limit: The difference between optical and electrical phase conjugation","authors":"Andrew D. Ellis, Son Thai Le, M. Al-Khateeb, S. Turitsyn, G. Liga, D. Lavery, Tianhua Xu, Polina Bayvel","doi":"10.1109/PHOSST.2015.7248271","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248271","url":null,"abstract":"We show that optical and electrical phase conjugation enable effective nonlinear compensation, The impact of polarization mode dispersion and finite processing bandwidth on the ultimate limits are also considered.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132692114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 28
2.6 GHz high-speed visible light communication of 450 nm GaN laser diode by direct modulation 直接调制450 nm GaN激光二极管的2.6 GHz高速可见光通信
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248281
Chang-Mi Lee, Chong Zhang, Michael Cantore, R. Farrell, S. Oh, T. Margalith, J. Speck, S. Nakamura, J. Bowers, S. Denbaars
{"title":"2.6 GHz high-speed visible light communication of 450 nm GaN laser diode by direct modulation","authors":"Chang-Mi Lee, Chong Zhang, Michael Cantore, R. Farrell, S. Oh, T. Margalith, J. Speck, S. Nakamura, J. Bowers, S. Denbaars","doi":"10.1109/PHOSST.2015.7248281","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248281","url":null,"abstract":"Gallium Nitride (GaN) based light emitting diodes (LEDs) has been considered as a next generation lighting source due to its high efficiency, long lifetime, and high brightness. In addition to the lighting purpose, visible light communication (VLC) on LEDs has been studied since it is easily available in the existing light infrastructure. Exponentially increasing wireless data traffic in radio frequency (RF) also motivated the need for VLC. However, the modulation bandwidth of LEDs with a long carrier recombination lifetime (~ns) is limited up to ~ 400 MHz even though orthogonal frequency division multiplexing (OFDM) rather than direct modulation could improve data rate up to 3 Gbit/s [1]. It can be seen that laser based VLC is necessary because the modulation bandwidth of laser diodes is limited by photon lifetime (~ps). In addition, since Denault et al. reported 76 lm/W efficacy for 442 nm laser based white lighting, the blue laser is promising lighting source readily available for white lighting communication, which is also called light fidelity (Li-Fi) [2]. Recent progress on high-speed VLC using a 422 nm laser diode showed 1.4 GHz bandwidth and 2.5 Gbps. Even if this is about three times larger bandwidth than blue LED VLC, the system was limited by the bandwidth of the photo detector (PD) due to the absence of commercially available high speed PD covering in the blue region with enough responsivity [3]. Our study demonstrated the first novel VLC system limited by the bandwidth of 450 nm laser diode with a high-speed UV-extended PD giving 2.6 GHz modulation bandwidth and 4 Gbit/s data transmission rate.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127848042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Photonic processing of ultra-wideband signals 超宽带信号的光子处理
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248264
R. Esman, A. Lenihan
{"title":"Photonic processing of ultra-wideband signals","authors":"R. Esman, A. Lenihan","doi":"10.1109/PHOSST.2015.7248264","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248264","url":null,"abstract":"We examine how and where nonlinear optical phenomena has and could have impact on wideband signal processing. The emphasis here is on analog microwave signals within antenna systems and suitable for over-air transmission.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129357659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ammonia molecular beam epitaxy technology for UV light emitters 紫外光源氨分子束外延技术
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248233
E. Young, B. Yonkee, J. Leonard, F. Wu, S. Denbaars, S. Nakamura, J. S. SpeckMaterials
{"title":"Ammonia molecular beam epitaxy technology for UV light emitters","authors":"E. Young, B. Yonkee, J. Leonard, F. Wu, S. Denbaars, S. Nakamura, J. S. SpeckMaterials","doi":"10.1109/PHOSST.2015.7248233","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248233","url":null,"abstract":"Ill-Nitride molecular beam epitaxy (MBE] is a flexible and fast research tool for development and demonstration of new alloys and device structures. While MBE is typically not used as a production technique for optoelectronic devices, excellent material quality can be achieved, as evidenced by extremely high IQE deep UV active regions [1], as well as laser quality active regions with emission wavelengths from the near UV to visible [2]. Ammonia MBE in particular also offers the ability to achieve highly doped layers with world record mobility [3]. In this paper, we will present recent research results using ammonia-assisted MBE that are relevant to developing high efficiency UV emitters.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128457720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Recent progress of AlGaN Deep-UV LED by improving light-extraction efficiency 提高光提取效率的AlGaN深紫外LED研究进展
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248168
H. Hirayama, N. Maeda, M. Jo
{"title":"Recent progress of AlGaN Deep-UV LED by improving light-extraction efficiency","authors":"H. Hirayama, N. Maeda, M. Jo","doi":"10.1109/PHOSST.2015.7248168","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248168","url":null,"abstract":"We demonstrated significant improvement of light-extraction efficiency (LEE) of AlGaN ultraviolet (UV) C light-emitting diodes (LEDs) by using transparent p-AlGaN contact layer and highly-reflective p-type electrode.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116740594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancing the security of VLC links: Physical-layer approaches 增强VLC链路的安全性:物理层方法
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248182
A. Mostafa, L. Lampe
{"title":"Enhancing the security of VLC links: Physical-layer approaches","authors":"A. Mostafa, L. Lampe","doi":"10.1109/PHOSST.2015.7248182","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248182","url":null,"abstract":"Visible light communication (VLC) channels are often perceived as eavesdropping-proof. However, that might not be the case in public areas or multiple-user scenarios. To overcome this limitation, we consider physical-layer security for VLC links.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"209 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115499049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Metallic and metallo-dielectric coaxial nanolasers 金属和金属介质同轴纳米激光器
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248235
M. Khajavikhan
{"title":"Metallic and metallo-dielectric coaxial nanolasers","authors":"M. Khajavikhan","doi":"10.1109/PHOSST.2015.7248235","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248235","url":null,"abstract":"Lasing properties of metallic and metallo-dielectric nanoscale coaxial structures will be examined theoretically and experimentally. Linewidth behavior, second order coherence function, and light-light characteristics will be considered altogether to develop an understanding of the underlying physics and applications.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127413510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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