发布求助
文献互助 智能选刊 最新文献

Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits最新文献

筛选
英文 中文
A macromodeling Approach To Process Simulator Tuning 过程模拟器调优的宏建模方法
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748255
J. Brockman, S. W. Director
{"title":"A macromodeling Approach To Process Simulator Tuning","authors":"J. Brockman, S. W. Director","doi":"10.1109/NUPAD.1990.748255","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748255","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130204659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Numerical Integral Method For 2d Diffusion Simulation 二维扩散模拟的数值积分法
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748279
Xiao‐Bo Tian, A. Strojwas
{"title":"Numerical Integral Method For 2d Diffusion Simulation","authors":"Xiao‐Bo Tian, A. Strojwas","doi":"10.1109/NUPAD.1990.748279","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748279","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127678168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hydrodynamic Simulation Of P-n Junctions In The Breakdown Regime 击穿区P-n结的流体力学模拟
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748269
W. Quade, M. Rudan
{"title":"Hydrodynamic Simulation Of P-n Junctions In The Breakdown Regime","authors":"W. Quade, M. Rudan","doi":"10.1109/NUPAD.1990.748269","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748269","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123237411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Generalized Formulation of Augmented Drift-Diffusion Transport Suitable for Use in General Purpose Device Simulators 适用于通用设备模拟器的增广漂移扩散输运的广义公式
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748265
P. Blakey, X. Wang, C. Maziar
{"title":"A Generalized Formulation of Augmented Drift-Diffusion Transport Suitable for Use in General Purpose Device Simulators","authors":"P. Blakey, X. Wang, C. Maziar","doi":"10.1109/NUPAD.1990.748265","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748265","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115910078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
An Adaptive Grid Refinement Strategy for the Drift-Diffusion 漂移扩散的自适应网格细化策略
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748288
J.F. Bilrgler, W. M. Coughran, W. Fichtner
{"title":"An Adaptive Grid Refinement Strategy for the Drift-Diffusion","authors":"J.F. Bilrgler, W. M. Coughran, W. Fichtner","doi":"10.1109/NUPAD.1990.748288","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748288","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124685593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical Solution Of Diffusion Equations On Time-variant Domains 时变域上扩散方程的数值解
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748252
M. Paffrath, K. Steger
{"title":"Numerical Solution Of Diffusion Equations On Time-variant Domains","authors":"M. Paffrath, K. Steger","doi":"10.1109/NUPAD.1990.748252","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748252","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131329957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Concurrent Conjugate-gradient-based 3-d Device Equation Solver Including Latency 一种基于并发共轭梯度的含延迟三维器件方程求解器
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748262
J. Chern, K. Mayaram, L. Arledge, P. Yang
{"title":"A Concurrent Conjugate-gradient-based 3-d Device Equation Solver Including Latency","authors":"J. Chern, K. Mayaram, L. Arledge, P. Yang","doi":"10.1109/NUPAD.1990.748262","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748262","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125971907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
/spl Omega/ - An Octree-based Mixed Element Grid Allocator For Adaptive 3d Device Simulation /spl Omega/ -一种基于八叉树的混合元素网格分配器，用于自适应3d设备仿真
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748259
P. Conti, N. Hitschfeld, W. Fichtner
{"title":"/spl Omega/ - An Octree-based Mixed Element Grid Allocator For Adaptive 3d Device Simulation","authors":"P. Conti, N. Hitschfeld, W. Fichtner","doi":"10.1109/NUPAD.1990.748259","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748259","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123046529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Mosfet Submicron Model For Temperature Effect Characterization 温度效应表征的Mosfet亚微米模型
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748282
H. Masuda, R. Ikematsu, J. Mano, H. Sugihara
{"title":"Mosfet Submicron Model For Temperature Effect Characterization","authors":"H. Masuda, R. Ikematsu, J. Mano, H. Sugihara","doi":"10.1109/NUPAD.1990.748282","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748282","url":null,"abstract":"This paper presents a new circuit model for sub-um NMOSFETs and describes experiments on them. The model is focused on the temperature effect on I-V and CV characteristics. The resulting I-V modeling error (RMS: Root Mean Square) is verified to be less than 1.5% for Vd=O-SV and Vg=O-SV operating conditions, and 300-450K temperature range. The CV model error also examined, showing 6.0% at 400K. Drain current characteristics were measured with a 0.8um NMOS under various temperature conditions. Through experiments and parameter extraction (for MOSTSM model[ 1][2]) on the measured I-V data, the following results are noted (see Fig. 1). (1) Channel conductance of a unit area (Po) exhibits a significant decrease (one half) for the temperature rise from 300K to 450K. However, the corresponding drain current reduction is only 20% at Vds=Vgs=SV. (2) The above effect is caused by a change in the gate-field effect factor of channelconductance (eel ), which shows a monotonic decrease for rising temperature [4]. MOST temperature model","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133592265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison Between Drift-diffusion Model And Hydrodynamic Model For Sub-micron Mosfets 亚微米mosfet漂移扩散模型与流体动力学模型的比较
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748292
H. Oda, N. Kotani, M. Shirahata, M. Fujinaga, Y. Akasaka
{"title":"Comparison Between Drift-diffusion Model And Hydrodynamic Model For Sub-micron Mosfets","authors":"H. Oda, N. Kotani, M. Shirahata, M. Fujinaga, Y. Akasaka","doi":"10.1109/NUPAD.1990.748292","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748292","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"4312 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128300681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信