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Optimization of InSb infrared focal plane arrays InSb红外焦平面阵列的优化
2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2012-10-02 DOI: 10.1109/NUSOD.2012.6316499
N. Guo, Weida Hu, Xiaoshuang Chen, Y. Lv, Xiaoliu Zhang, J. Si, W. Lu
{"title":"Optimization of InSb infrared focal plane arrays","authors":"N. Guo, Weida Hu, Xiaoshuang Chen, Y. Lv, Xiaoliu Zhang, J. Si, W. Lu","doi":"10.1109/NUSOD.2012.6316499","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316499","url":null,"abstract":"The quantum efficiency (QE) for mid-wavelength InSb infrared focal plane arrays has been numerically studied. Effects of the absorption length and thickness of p-region on device QE have been investigated. Our work shows that the optimum thickness of p-region is largely dependent on the absorption characteristics of the InSb.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125794919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Device simulation of intermediate band solar cells 中间波段太阳能电池的器件模拟
2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2012-02-07 DOI: 10.1117/12.910993
K. Yoshida, Y. Okada
{"title":"Device simulation of intermediate band solar cells","authors":"K. Yoshida, Y. Okada","doi":"10.1117/12.910993","DOIUrl":"https://doi.org/10.1117/12.910993","url":null,"abstract":"The intermediate band (IB) solar cells is one of the candidates to realize a higher conversion efficiency than the Shockley-Queisser limit of single-junction solar cells. By using device simulation of intermediate solar cells developed based on drift-diffusion method, we studied the fundamental properties of IB cell. Light concentration technique is very important to reduce the recombination via IB.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114701575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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