2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)最新文献

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Analytic solution of the nonlinear equation 非线性方程的解析解
Hyuk-jae Lee, Seok Lee, D. Woo, Taikjin Lee, J. H. Kim
{"title":"Analytic solution of the nonlinear equation","authors":"Hyuk-jae Lee, Seok Lee, D. Woo, Taikjin Lee, J. H. Kim","doi":"10.1109/NUSOD.2012.6316509","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316509","url":null,"abstract":"We analytically solve the nonlinear wave equation of the beam, which travels through the nonlinear Kerr medium. The tanh function method, a powerful method solving the traveling wave equation, is applied to the self-guiding light.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125832397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optical design of a qubit embedded in photonic crystals for rotation gate operations 用于旋转门操作的光子晶体中嵌入量子比特的光学设计
H. Nihei, A. Okamoto
{"title":"Optical design of a qubit embedded in photonic crystals for rotation gate operations","authors":"H. Nihei, A. Okamoto","doi":"10.1109/NUSOD.2012.6316530","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316530","url":null,"abstract":"We have optimized the optical design parameters of a qubit composed of excited states of an atom embedded in photonic crystals for operating rotation gates, using the coherent control of spontaneous emission from the atom.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133736100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The improvement of figure of merit with infrared perfect absorber for plasmonic resonance sensing 等离子体共振传感中红外完美吸收器的性能改进
G. H. Li, X. Wu, Y. Jiang, C. Shao, L. J. Huang, X. Chen, W. D. Hu, W. Lu
{"title":"The improvement of figure of merit with infrared perfect absorber for plasmonic resonance sensing","authors":"G. H. Li, X. Wu, Y. Jiang, C. Shao, L. J. Huang, X. Chen, W. D. Hu, W. Lu","doi":"10.1109/NUSOD.2012.6316516","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316516","url":null,"abstract":"We present an infrared perfect absorber which combines gold nanobars and a photonic microcavity. By adjusting the structural geometry, this device is utilized for refractive index sensing. For proper designed structural parameters, it can yield more than 99% absorbance in the near-infrared frequency regime. Our work directly investigate the effect of geometry on sensing performance and it can sever as a model of coupling between localized surface plasmon within nanoparticles and propagating surface plasmon along planar metal layer for sensing applications with a perfect absorber.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114062057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Structures, stability and electronic properties of two- or four-segment BN/C nanotubes 二段或四段BN/C纳米管的结构、稳定性和电子性能
Chaoyu He, C. X. Zhang, H. Xiao, L. Sun, J. Zhong
{"title":"Structures, stability and electronic properties of two- or four-segment BN/C nanotubes","authors":"Chaoyu He, C. X. Zhang, H. Xiao, L. Sun, J. Zhong","doi":"10.1109/NUSOD.2012.6316526","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316526","url":null,"abstract":"The structures, stability and electronic properties of some novel two- or four-segments BN/C nanotubes are systematically investigated using the density functional theory based first-principle calculations. Our calculations reveal that the structures, stability and electronic properties of these hybridized nanotubes are dependent on their diameters, compositions and hybridizing manners.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115010748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On the line form and natural linewidth; Simulation and interpretation of experiments 上线形式和自然线宽;模拟和解释实验
M. G. Noppe
{"title":"On the line form and natural linewidth; Simulation and interpretation of experiments","authors":"M. G. Noppe","doi":"10.1109/NUSOD.2012.6316548","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316548","url":null,"abstract":"A new formula for line form inside and outside laser is derived. The linewidth is calculated on the basis of the derived formula for the line form. Our simulation of the linewidth for three Fabry-Perot lasers allows explaining all known to us experimental measurements of semiconductor laser natural linewidth.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123454018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Simulation of resonant tunneling structures: Origin of the I-V multi-peak and plateau-like behaviour 共振隧道结构的模拟:I-V多峰和高原样行为的起源
J. Wen, Q. Weng, L. Li, D. Xiong
{"title":"Simulation of resonant tunneling structures: Origin of the I-V multi-peak and plateau-like behaviour","authors":"J. Wen, Q. Weng, L. Li, D. Xiong","doi":"10.1109/NUSOD.2012.6316507","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316507","url":null,"abstract":"Plateau-like behavior and multi-peak of the I-V curves of an AlAs/GaAs/AlAs double-barrier resonant tunneling diode combined with a layer of InAs QDs (QD-RTD) are simulated. Our simulation results show that the coupling between the energy level in the emitter QW (QD) and that in the central quantum well is the key point in understanding the origin of the I-V multi-peak and plateau-like structure. The embedded designed QD layer at the emitter spacer can enhance this effect. The effects of device temperature on the I-V characteristics are obtained. Our results provide the physical basis for understanding and utilizing the plateau-like behavior of I-V curves in designing resonant tunneling devices.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123518085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The investigation of the transient photovoltage in HgCdTe infrated photovoltaic detectors HgCdTe红外光伏探测器瞬态光电压的研究
H. Cui, N. Tang, Zhong Tang
{"title":"The investigation of the transient photovoltage in HgCdTe infrated photovoltaic detectors","authors":"H. Cui, N. Tang, Zhong Tang","doi":"10.1109/NUSOD.2012.6316538","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316538","url":null,"abstract":"The changed polarity of transient photovoltage (TPA) from negative to positive induced by ultra fast lasers illumination is studied in the HgCdTe p-n junction photovoltage detector. The negative photovoltaic-response decrease obviously and even disappear by blocking the laser beam with an aperture to limit the illumination area of the linear array detectors. A combined theoretical model of p-n junction and Schottky contact can explain this new phenomenon well. Using the TPA technique and the combined model, the characters of p-n junction and Schottky contact will be distinguished. Therefore, it could be used in characterizing the Ohmic contact of the detectors electrodes, and its sensitivity is expected to be much higher than the steady states methods.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123537997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of surrounded metallic layers on whispering-gallery modes in circular microresonators 环形微谐振器中围合金属层对低语廊模式的影响
Q. Yao, Y. Z. Huang, X. Lv, J. D. Lin, L. Zou
{"title":"Influence of surrounded metallic layers on whispering-gallery modes in circular microresonators","authors":"Q. Yao, Y. Z. Huang, X. Lv, J. D. Lin, L. Zou","doi":"10.1109/NUSOD.2012.6316517","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316517","url":null,"abstract":"Influences of surrounded metallic layers (Au, Al, Ag, Cu, and Ti) on whispering-gallery modes (WGMs) are numerically investigated by solving eigenvalue equation for multiple-layer two dimensional circular microresonators. For TM modes, metal layer can provide good optical confinement as its thickness is larger than 0.03 μm. For TE modes, an isolation layer should be introduced to reduce the dissipation loss of metallic layers. Al and Ag layers can provide better optical confinement than Au layer, and Ti layer which is usually a layer of p-electrode will result in a large dissipation loss.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115352398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum mechanical simulations of nano-structures and nano-devices 纳米结构和纳米器件的量子力学模拟
Xiangwei Jiang, H. Deng, Shu-Shen Li, Jun-Wei Luo, Lin-wang Wang
{"title":"Quantum mechanical simulations of nano-structures and nano-devices","authors":"Xiangwei Jiang, H. Deng, Shu-Shen Li, Jun-Wei Luo, Lin-wang Wang","doi":"10.1109/NUSOD.2012.6316559","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316559","url":null,"abstract":"We have investigated the quantum mechanical effects in quantum dots and nano size silicon MOSFETs using empirical psedupotential Hamiltonian model and linear combination of bulk band (LCBB) method. Unlike the traditional effective mass approximation and kp method, our approach uses a full zone expansion to represent the electronic state. This method provides a very fast yet accurate way to simulate million atom nano structures and nano devices even on a single processor personal computer.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124295856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recent progress in theory of nonlinear pulse propagation in subwavelength waveguides 亚波长波导中非线性脉冲传播理论研究进展
V. Afshar, Wenqi Zhang, M. A. Lohe, T. Monro
{"title":"Recent progress in theory of nonlinear pulse propagation in subwavelength waveguides","authors":"V. Afshar, Wenqi Zhang, M. A. Lohe, T. Monro","doi":"10.1109/NUSOD.2012.6316551","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316551","url":null,"abstract":"High index subwavelength waveguides form a new platform for highly nonlinear photonic devices. This paper reviews the recent progress in the theory of nonlinear pulse propagation in these waveguides and highlights the opportunities that these waveguides have opened up in terms of active photonic devices.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128869155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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