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2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)最新文献

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The tunable plasmonic resonant absorption in grating-gate GaN-based HEMTs for THz detection 栅极氮化镓基hemt中用于太赫兹探测的可调谐等离子共振吸收
2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2012-10-02 DOI: 10.1109/NUSOD.2012.6316515
Weida Hu, Lin Wang, N. Guo, Xiaoshuang Chen, W. Lu
{"title":"The tunable plasmonic resonant absorption in grating-gate GaN-based HEMTs for THz detection","authors":"Weida Hu, Lin Wang, N. Guo, Xiaoshuang Chen, W. Lu","doi":"10.1109/NUSOD.2012.6316515","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316515","url":null,"abstract":"The plasmonic resonant phenomenon in terahertz wave band for GaN-based high electron mobility transistors is investigated by using finite difference scheme. Strong resonant absorptions can be obtained with large area slit grating-gate serves both as electrodes and coupler. Such kinds of plasmonic resonant detection devices are compatible to the well-developed GaN process, and possibly overcome the difficulty in fabricating ultra-short-gate devices for terahertz applications.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1038 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131512489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-dimensional simulation of Mid-infrared quantum cascade lasers: Temperature and field dependent analysis 中红外量子级联激光器的二维模拟:温度和场相关分析
2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2012-10-02 DOI: 10.1109/NUSOD.2012.6316489
Yingying Li, Z. Simon Li, G. Ru
{"title":"Two-dimensional simulation of Mid-infrared quantum cascade lasers: Temperature and field dependent analysis","authors":"Yingying Li, Z. Simon Li, G. Ru","doi":"10.1109/NUSOD.2012.6316489","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316489","url":null,"abstract":"We report on a 2D simulation study of a couple of mid-infrared quantum cascade lasers based on the integration of a number of optoelectronic models. Quantum mechanical computation was performed to find the quantization states and a rate equation approach was used to compute the optical gain. Temperature and field dependence effects are taken into account in optical gain model to make a realistic simulation of QCLs. The simulation study compared the integrated models with experimental data with different structures and at different temperatures. Reasonable agreements between experiment and simulation have been obtained.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114853022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New optical coupling structure of high light absorption quantum well infrared photodetectors 高光吸收量子阱红外探测器的新型光学耦合结构
2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2012-10-02 DOI: 10.1109/NUSOD.2012.6316523
Q. Li, N. Li, X. Chen, Z. Li, W. Lu
{"title":"New optical coupling structure of high light absorption quantum well infrared photodetectors","authors":"Q. Li, N. Li, X. Chen, Z. Li, W. Lu","doi":"10.1109/NUSOD.2012.6316523","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316523","url":null,"abstract":"A new optical coupling structure of high optical absorption quantum well infrared photodetectors is reported, in which 4 periods of Al0.15Ga0.85As/GaAs QWs was integrated with double gold films and a sandwiched structure of metal-QWs-metal gratings has been adopted. Normal incident light can be coupled and trapped in the dielectric layer in the form of transverse electromagnetic waves, when the structure is optimized. Therefore, the light absorption of quantum wells is greatly enhanced when the light travels back and forth in the dielectric layer. Numerical simulations are made via 2D finite-difference time-domain (FDTD) method, yielding consistent results with experiments, which shows the photocurrent response increase of 21 times to the 45 degree mesa photodetector. At the same time, we observe the Rabi splitting.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115252017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electro-optical characteristics for AlGaN solar-blind p-i-n photodiode: Experiment and simulation AlGaN太阳盲p-i-n光电二极管的电光特性:实验与仿真
2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2012-10-02 DOI: 10.1109/NUSOD.2012.6316493
X. D. Wang, W. D. Hu, X. Chen, J. T. Xu, L. Wang, X. Y. Li, W. Lu
{"title":"Electro-optical characteristics for AlGaN solar-blind p-i-n photodiode: Experiment and simulation","authors":"X. D. Wang, W. D. Hu, X. Chen, J. T. Xu, L. Wang, X. Y. Li, W. Lu","doi":"10.1109/NUSOD.2012.6316493","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316493","url":null,"abstract":"The fabrication and modeling for solar-blind AlGaN-based p-i-n photodiode have been presented. The simulated dark current characteristics are in good agreement with the experiments. It is found that the peak responsivity of 0.005A/W can be achieved at 265nm corresponding to the cutoff wavelength of the Al0.45Ga0.55N absorption layer. The transmission spectra drop to nearly zero due to the intense light absorption of n-type Al0.65Ga0.35N layer.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121661585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Efficient simulation method for DFB lasers with large gain saturation effect 大增益饱和效应DFB激光器的高效仿真方法
2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2012-10-02 DOI: 10.1109/NUSOD.2012.6316550
Yanping Xi, Lin Han, Xun Li
{"title":"Efficient simulation method for DFB lasers with large gain saturation effect","authors":"Yanping Xi, Lin Han, Xun Li","doi":"10.1109/NUSOD.2012.6316550","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316550","url":null,"abstract":"In this paper, we proposed a nonlinear approximation scheme to the time-dependent longitudinal carrier distribution with a view toward finding the efficient solution scheme of the previously proposed standing-wave model for simulation of DFB lasers. It shows its advantage over the existing linear approximation scheme in cases where the optical power is large enough to trigger the saturation effect. The validity of this improved scheme is demonstrated by simulation example of λ/4-shifted DFB lasers.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130600991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hydrogenated graphene: Structures and surface work function 氢化石墨烯:结构和表面功函数
2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2012-10-02 DOI: 10.1109/NUSOD.2012.6316525
N. Jiao, Chaoyu He, C. X. Zhang, Lizhong Sun
{"title":"Hydrogenated graphene: Structures and surface work function","authors":"N. Jiao, Chaoyu He, C. X. Zhang, Lizhong Sun","doi":"10.1109/NUSOD.2012.6316525","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316525","url":null,"abstract":"The structures and surface work functions of graphanes with five fundamental configurations are systematically studied with the density functional theory. We find that, from the point of view of energy, hydrogenated graphene prefer forming the chair graphane than the other ones. The work function and layer thickness of the five structures vary with the hydrogenation, providing important theoretical data for experimental identifying the configurations of graphanes by STM and AFM.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127724522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A general transformation designing high gain lens antennas with homogeneous media 设计具有均匀介质的高增益透镜天线的一般变换
2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2012-10-02 DOI: 10.1109/NUSOD.2012.6316500
Li-Qian Huang, Xu'nan Chen, Binbin Ni, Guanhai Li, Z. Li, W. Lu
{"title":"A general transformation designing high gain lens antennas with homogeneous media","authors":"Li-Qian Huang, Xu'nan Chen, Binbin Ni, Guanhai Li, Z. Li, W. Lu","doi":"10.1109/NUSOD.2012.6316500","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316500","url":null,"abstract":"By employing finite embedded coordinate transformation method, we propose a general transformation to design a highly directive horn antenna with homogeneous and anisotropic media. Different from the layered lens antenna, our antenna consists of four triangle regions made of homogeneous and anisotropic media, which greatly reduces the difficulty of practical realization. Full wave simulation based on finite element method is performed to validate the performance of the antenna.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121579868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-switching using SOA-assisted Sagnac interferometer 利用soa辅助Sagnac干涉仪进行自开关
2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2012-10-02 DOI: 10.1109/NUSOD.2012.6316534
V. Ahmadi, M. Jamali, M. Razaghi
{"title":"Self-switching using SOA-assisted Sagnac interferometer","authors":"V. Ahmadi, M. Jamali, M. Razaghi","doi":"10.1109/NUSOD.2012.6316534","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316534","url":null,"abstract":"We propose and investigate self-switching mechanism by Sagnac interferometer based semiconductor optical amplifier (SOA) for subpicosecond pulses. The various switch characteristics such as phase differentiation between propagated pulses, SOA gain and switch extinction ratio all in time domain are shown.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133371006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling on current-voltage characteristics of HgCdTe photodiodes in forward bias region HgCdTe光电二极管正偏区电流-电压特性建模
2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2012-10-02 DOI: 10.1109/NUSOD.2012.6316486
Yang Li, Z. Ye, Chun Lin, Xiao-ning Hu, R. Ding, Li He
{"title":"Modeling on current-voltage characteristics of HgCdTe photodiodes in forward bias region","authors":"Yang Li, Z. Ye, Chun Lin, Xiao-ning Hu, R. Ding, Li He","doi":"10.1109/NUSOD.2012.6316486","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316486","url":null,"abstract":"Current-voltage (I-V) characteristics of HgCdTe photodiodes in the forward bias region have been modeled on account of mechanisms including diffusion and recombination currents, metal-semiconductor (M-S) contact and constant series resistance. Moreover, a data processing approach has been developed to obtain valuable physical parameters from measured I-V curves. This model and algorithm have also been verified to be available and promising by the fitting results on device parameters of HgCdTe photodiodes.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116327781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nonlinear optics in photonic crystal nanostructures 光子晶体纳米结构中的非线性光学
2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2012-10-02 DOI: 10.1109/NUSOD.2012.6316529
C. Husko
{"title":"Nonlinear optics in photonic crystal nanostructures","authors":"C. Husko","doi":"10.1109/NUSOD.2012.6316529","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316529","url":null,"abstract":"We examine nonlinear Kerr effects in slow-light photonic crystals in the presence of multi-photon absorption and free-carriers. We derive analytic formulations for self-phase modulation limited by three-photon absorption. These observations are confirmed with a modified nonlinear Schrödinger equation (NLSE). Experimental verifications of several nonlinear processes are presented to support the modeling.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115321948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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