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A 5-GHz Class-E power amplifier with an Inverse Class-B driver on 65nm CMOS 基于65nm CMOS的5 ghz e类功率放大器和逆b类驱动器
2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) Pub Date : 2017-05-15 DOI: 10.1109/INMMIC.2017.7927320
Matthew Love, Daniel Decle Colin, M. Thian
{"title":"A 5-GHz Class-E power amplifier with an Inverse Class-B driver on 65nm CMOS","authors":"Matthew Love, Daniel Decle Colin, M. Thian","doi":"10.1109/INMMIC.2017.7927320","DOIUrl":"https://doi.org/10.1109/INMMIC.2017.7927320","url":null,"abstract":"The design and simulation of a Class-E power amplifier with an Inverse Class-B driver are presented. The Inverse Class-B amplifier generates a train of half sinusoids which provides a compromise between using a sine wave and a square wave as the input waveform. The design methodology proposed includes the use of load-pull technique to determine the optimum fundamental-frequency load-impedance of the amplifiers, and a series LC resonator to improve the second-harmonic suppression level. The PA exhibited 26.3 dB gain and 57% PAE at an output power of 21.3 dBm with the second and third harmonics attenuated to 38 and 37.3 dBc respectively.","PeriodicalId":322300,"journal":{"name":"2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117327342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
mm-Wave RFID for IoT applications 毫米波RFID物联网应用
2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) Pub Date : 2017-04-22 DOI: 10.1109/INMMIC.2017.7927322
P. Freidl, M. Gadringer, Dominik Amschl, Wolfgang Bcõsch
{"title":"mm-Wave RFID for IoT applications","authors":"P. Freidl, M. Gadringer, Dominik Amschl, Wolfgang Bcõsch","doi":"10.1109/INMMIC.2017.7927322","DOIUrl":"https://doi.org/10.1109/INMMIC.2017.7927322","url":null,"abstract":"The internet of things (IoT) and its applications demand for solutions for small and low-power communication devices. Overcoming the drawbacks of UHF radio frequency identification (RFID) a shift of the backscatter communication principle to mm-wave frequencies is desirable. With the significant reduction of the transponder size and wider communication bandwidth, many new applications become possible. Demonstrating the feasibility, we implemented a fully functional MMID system in the E-band. Both, the base station and the transponder are investigated and their performance is presented in a system context.","PeriodicalId":322300,"journal":{"name":"2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124017067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Efficient class-E power amplifier for variable load operation 高效的e类功率放大器，可用于可变负载操作
2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) Pub Date : 2017-04-20 DOI: 10.1109/INMMIC.2017.7927319
D. Vegas, Felipe Moreno, M. Ruiz, J. A. García
{"title":"Efficient class-E power amplifier for variable load operation","authors":"D. Vegas, Felipe Moreno, M. Ruiz, J. A. García","doi":"10.1109/INMMIC.2017.7927319","DOIUrl":"https://doi.org/10.1109/INMMIC.2017.7927319","url":null,"abstract":"In this paper, a GaN HEMT class-E power amplifier (PA) has been designed for efficiently operating under variable load resistance at the 750 MHz frequency band. The desired zero voltage switching (ZVS) of the device can be approximated for a wide range of resistive loads, by means of a simple inductive impedance inverter, derived from [1]. The load-pull contours, obtained from simulations, allowed the drain terminating network to be properly adjusted in order to maximize the output power control while at the same time minimizing losses. Once the amplifier was implemented, an efficiency over 76% has been measured at 9.6 dB power back-off, with a peak of 85% at 50 Ω. In addition, the efficiency stays as high as 75% for a 150 MHz frequency range.","PeriodicalId":322300,"journal":{"name":"2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115503447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Class F-C X-band MMIC GaN power amplifier: An extension of waveform engineering approach F-C类x波段MMIC GaN功率放大器:波形工程方法的扩展
2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) Pub Date : 2017-04-20 DOI: 10.1109/INMMIC.2017.7927299
E. Cipriani, P. Colantonio, F. Giannini
{"title":"Class F-C X-band MMIC GaN power amplifier: An extension of waveform engineering approach","authors":"E. Cipriani, P. Colantonio, F. Giannini","doi":"10.1109/INMMIC.2017.7927299","DOIUrl":"https://doi.org/10.1109/INMMIC.2017.7927299","url":null,"abstract":"This contribution reports the design of an X-band MMIC power amplifier in a 0.25 um GaN technology, proposing for the first time a harmonic manipulation approach on a class C bias condition. Output network provides the power matching condition at fundamental frequency and an open circuit condition at the 3rd harmonic; the correct phase ratio between drain current components is assured by the proper input 2nd harmonic impedance. This solution allows to reach an efficiency higher than 60% in the frequency band 8.5 GHz–9.5 GHz.","PeriodicalId":322300,"journal":{"name":"2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124382959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A G band frequency quadrupler in 55 nm BiCMOS for bist applications 55纳米BiCMOS中G波段频率四倍器的应用
2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) Pub Date : 2017-04-20 DOI: 10.1109/INMMIC.2017.7927310
W. Aouimeur, E. Lauga-Larroze, J. Arnould, J. Moron-Guerra, C. Gaquière, S. Lépilliet, T. Quemerais, D. Gloria, A. Serhan
{"title":"A G band frequency quadrupler in 55 nm BiCMOS for bist applications","authors":"W. Aouimeur, E. Lauga-Larroze, J. Arnould, J. Moron-Guerra, C. Gaquière, S. Lépilliet, T. Quemerais, D. Gloria, A. Serhan","doi":"10.1109/INMMIC.2017.7927310","DOIUrl":"https://doi.org/10.1109/INMMIC.2017.7927310","url":null,"abstract":"In this paper, a frequency quadrupler based on a single ended frequency doubler, a new Marchand Balun with Coupled Slow-wave Coplanar Wave (CS-CPW) lines and a balanced frequency doubler in G band is presented and analyzed for in-situ characterization applications. The experimental results of the frequency quadrupler exhibit at 180 GHz a peak output power of −4.5 dBm associate with a linear conversion gain of −5.5 dB, a frequency bandwidth of 160 to 190 GHz and a DC power consumption of 39 mW. This quadrupler has been fabricated in the 55 nm SiGe BiCMOS technology from STMicroelectronics, the chip area is 1850×780 μm2 including the pads.","PeriodicalId":322300,"journal":{"name":"2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124444815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Noise degradation of cascodes in broadband power amplifiers 宽带功率放大器级联码的噪声退化
2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) Pub Date : 2017-04-20 DOI: 10.1109/INMMIC.2017.7927298
T. Huber, R. Quay, W. Bösch
{"title":"Noise degradation of cascodes in broadband power amplifiers","authors":"T. Huber, R. Quay, W. Bösch","doi":"10.1109/INMMIC.2017.7927298","DOIUrl":"https://doi.org/10.1109/INMMIC.2017.7927298","url":null,"abstract":"This paper compares the noise performance of the common-source and the cascode topology. Although the cascode topology has several advantages over the common-source stage, the noise performance degrades due to the channel noise and the induced gate noise of the common-gate stage. To underline the theory two multi-decade GaN feedback power amplifiers were designed in common-source and cascode topology, using a submicron AlGaN/GaN MMIC technology on SiC substrate. Both designs achieve 13 dB gain and simultaneously good input and output matching. The 3 dB cutoff frequency of the common-source design is 12 GHz and the cascode feedback amplifier achieves even 17 GHz. At mid-band the common-source and the cascode design achieve a moderate noise figure of 3 dB and 4 dB while maintaining an output power over the complete frequency range of 28 dBm and 29 dBm respectively.","PeriodicalId":322300,"journal":{"name":"2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129599004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A differential threshold voltage compensated RF-DC power converter for RFID tag ICs 一种用于RFID标签ic的差分阈值电压补偿RF-DC功率转换器
2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) Pub Date : 2017-04-20 DOI: 10.1109/INMMIC.2017.7927297
Lukas Zoscher, Peter Herkess, J. Grosinger, U. Muehlmann, Dominik Amschl, W. Bösch
{"title":"A differential threshold voltage compensated RF-DC power converter for RFID tag ICs","authors":"Lukas Zoscher, Peter Herkess, J. Grosinger, U. Muehlmann, Dominik Amschl, W. Bösch","doi":"10.1109/INMMIC.2017.7927297","DOIUrl":"https://doi.org/10.1109/INMMIC.2017.7927297","url":null,"abstract":"The usage of threshold voltage (Vth) compensation techniques allows to decrease the input quality factor of RF-DC power converters or more specifically RF charge pumps at low levels of input power, and thus enable the implementation of highly sensitive broadband UHF radiofrequency identification (RFID) transponders (tags). In this work, we present a Vth compensation approach using a combination of gate and bulk biasing for differential charge pump implementations. Prototypes of an eight stage RF charge pump using the proposed Vth compensation technique have been manufactured in a low power 40 nm CMOS technology. Measurements of the test circuits reveal a high power conversion efficiency of 42.7 % and a low input quality factor of approximately 14, at an output power of 4 ßW and a DC voltage level of 1 V. Furthermore, we compare the obtained measurement results with two previously published RF charge pumps.","PeriodicalId":322300,"journal":{"name":"2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130896127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Hybrid nonlinear model for microwave active devices using kriging 微波有源器件的克里格混合非线性模型
2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) Pub Date : 2017-04-20 DOI: 10.1109/INMMIC.2017.7927317
P. Barmuta, F. Ferranti, K. Łukasik, G. P. Gibiino, D. Schreurs
{"title":"Hybrid nonlinear model for microwave active devices using kriging","authors":"P. Barmuta, F. Ferranti, K. Łukasik, G. P. Gibiino, D. Schreurs","doi":"10.1109/INMMIC.2017.7927317","DOIUrl":"https://doi.org/10.1109/INMMIC.2017.7927317","url":null,"abstract":"This paper presents a hybrid empirical-behavioral model applied to microwave active devices. The empirical part ensures meaningful, physical response over a wide range of variables, while the behavioral part boosts the accuracy in the particular region of interest. A simple Kriging with zero mean value is employed as the behavioral model. Such hybrid model outperforms the sole empirical model and a hybrid with radial-basis-functions model both in interpolation performance and lower extraction time. The extrapolation capabilities of the model are maintained.","PeriodicalId":322300,"journal":{"name":"2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126872981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Evaluation of an optimal digital predistorter for multistandard systems 多标准系统中最佳数字预失真器的评估
2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) Pub Date : 2017-04-20 DOI: 10.1109/INMMIC.2017.7927316
H. Hamoud, K. El-Akhdar, S. Mons, E. Ngoya
{"title":"Evaluation of an optimal digital predistorter for multistandard systems","authors":"H. Hamoud, K. El-Akhdar, S. Mons, E. Ngoya","doi":"10.1109/INMMIC.2017.7927316","DOIUrl":"https://doi.org/10.1109/INMMIC.2017.7927316","url":null,"abstract":"Digital Predistorter (DPD) linearizers are key components for signal integrity and power efficiency in modern communication systems. This article presents a comparative study of the performance of three models for multistandard DPD usage, the Two-Path Memory (TPM) model, the General memory Polynomial (GMP) model, and the Dynamic Deviation Reduction-Based Volterra (DDR) model.","PeriodicalId":322300,"journal":{"name":"2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128147932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
The error power ratio estimates EVM for a wide class of impairments: Monte Carlo simulations 误差功率比估计EVM的广泛类别的损害:蒙特卡洛模拟
2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) Pub Date : 2017-04-20 DOI: 10.1109/INMMIC.2017.7927308
Karl Freiberger, H. Enzinger, C. Vogel
{"title":"The error power ratio estimates EVM for a wide class of impairments: Monte Carlo simulations","authors":"Karl Freiberger, H. Enzinger, C. Vogel","doi":"10.1109/INMMIC.2017.7927308","DOIUrl":"https://doi.org/10.1109/INMMIC.2017.7927308","url":null,"abstract":"The error vector magnitude (EVM) is an important system level metric for RF and mixed-signal communication systems and related building blocks. Recently, we have introduced the error power ratio (EPR), a method based on the noise power ratio for estimating the EVM, and presented selected simulation and measurement results. The present paper compares EVM and EPR for many different systems by randomly varying impairment model parameters. To model a multitude of nonlinearities with memory using few parameters, we use a novel baseband Wiener-Hammerstein model with feedback. In 3000 trials of combined phase noise, IQ mismatch and nonlinearity, the mean error (EPR minus EVM) is less than −0.25 dB. Outliers are within −0.5 and −0.8 dB over the entire range of EVM levels (−80 to −15 dB).","PeriodicalId":322300,"journal":{"name":"2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125424570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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