发布求助
文献互助 智能选刊 最新文献

First IEEE International Conference on Group IV Photonics, 2004.最新文献

筛选
英文 中文
Luminescence properties of Er/sup 3+/-doped SiO/sub x/ films containing amorphous Si nanoparticles 含非晶硅纳米颗粒Er/sup +/-掺杂SiO/sub x/薄膜的发光特性
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416658
W.N. Chen, C. Chen
{"title":"Luminescence properties of Er/sup 3+/-doped SiO/sub x/ films containing amorphous Si nanoparticles","authors":"W.N. Chen, C. Chen","doi":"10.1109/GROUP4.2004.1416658","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416658","url":null,"abstract":"PL properties of Er/sup 3+/ doped SiO/sub x/ films containing Si nanoparticles have been studied. Er/sup 3+/ emission intensity does not depend strongly upon crystallinity of Si clusters. The films can yield efficient Er/sup 3+/ emission.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132055340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
One and two-dimensional MMI device with strong confinement structure on SOI SOI上具有强约束结构的一、二维MMI器件
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416712
Yanzhe Tang, Yiling Sun, Wenhui Wang, Yaming Wu, Jianyi Yang, Xiaoqing Jiang
{"title":"One and two-dimensional MMI device with strong confinement structure on SOI","authors":"Yanzhe Tang, Yiling Sun, Wenhui Wang, Yaming Wu, Jianyi Yang, Xiaoqing Jiang","doi":"10.1109/GROUP4.2004.1416712","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416712","url":null,"abstract":"One and two-dimensional MMI couplers with strong confinement on SOI were fabricated. Analysis shows that it has lower imbalance, wider bandwidth and better fabrication tolerance. A special process was proposed to eliminate the alignment error.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132411990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
QD geometry and electrical characteristics of Al/Si/sub 1-x/Ge/sub x//n-Si/Al heterodiodes with different crystalline orientations of Si/sub 1-x/Ge/sub x/ layers 不同Si/sub - 1-x/Ge/sub -x/ n-Si/Al层取向Al/Si/sub -x/ sub -x/ n-Si/Al异质二极管的QD几何和电学特性
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416659
V. Ligatchev, T. Wong
{"title":"QD geometry and electrical characteristics of Al/Si/sub 1-x/Ge/sub x//n-Si/Al heterodiodes with different crystalline orientations of Si/sub 1-x/Ge/sub x/ layers","authors":"V. Ligatchev, T. Wong","doi":"10.1109/GROUP4.2004.1416659","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416659","url":null,"abstract":"Specific features of room-temperature I-V and C-V curves of Al/Si/sub 1-x/Ge/sub x//n-Si/Al structures with x = 0.1 - 0.3 and different crystalline orientations of the Si/sub 1-x/Ge/sub x/ layers are studied experimentally and attributed to influence of quantum confinement effect.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124998533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recent progresses of silicon-based optoelectronic devices for application in fiber communication 硅基光电子器件在光纤通信中的应用进展
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416704
Jinzhong Yu
{"title":"Recent progresses of silicon-based optoelectronic devices for application in fiber communication","authors":"Jinzhong Yu","doi":"10.1109/GROUP4.2004.1416704","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416704","url":null,"abstract":"Si-based optoelectronic devices, including stimulated emission from Si diode, 1.3 and 1.5 /spl mu/m SiGe photodetector with quantum structures, 1 GHz MOS optical modulator, SOI optical switch matrix and wavelength tunable filter are reviewed in the paper.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122537586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Stimulated emission at silicon bandgap energy from a nanostructured silicon PN junction diode 纳米结构硅PN结二极管的硅带隙能量受激发射
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416634
M. Chen, C. Tsai
{"title":"Stimulated emission at silicon bandgap energy from a nanostructured silicon PN junction diode","authors":"M. Chen, C. Tsai","doi":"10.1109/GROUP4.2004.1416634","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416634","url":null,"abstract":"Stimulated emission at silicon bandgap energy has been observed from a silicon nanostructured PN junction diode with a ridge waveguide structure using current injection at room temperature. The output optical power increases superlinearly and multiple spectral peaks appear at wavelengths longer than the main peak of spontaneous emission as the injection current reaches a threshold. A theoretical analysis on population inversion and optical gain at bandgap energy in indirect bandgap semiconductors suggests the possibility of stimulated emission.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129554399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Direct integration of Ge detectors and modulators on the Si microphotonics platform 锗探测器和调制器在硅微光电子平台上的直接集成
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416646
K. Wada, Jifeng Liu, S. Jongthammanurak, D. D. Cannon, D. T. Danielson, Yasuhiko Ishikawa, Anat Eshed, Ching-yin Hong, J. Michel, L. Kimerling
{"title":"Direct integration of Ge detectors and modulators on the Si microphotonics platform","authors":"K. Wada, Jifeng Liu, S. Jongthammanurak, D. D. Cannon, D. T. Danielson, Yasuhiko Ishikawa, Anat Eshed, Ching-yin Hong, J. Michel, L. Kimerling","doi":"10.1109/GROUP4.2004.1416646","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416646","url":null,"abstract":"This work discusses direct integration of Ge detectors and modulators on the Si microphotonics platform. In addition, this paper also describes the challenges and examples of Si microphotonics.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128346285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Silicon germanium quantum cascade heterostructures for infrared emission 红外发射用硅锗量子级联异质结构
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416644
R. Kelsall, Z. Domic, P. Harrison, S. Lynch, P. Townsend, D. Paul, D. Norris, S. Liew, A. Cullis, X. Li, J. Zhang, M. Bain, H. Gamble
{"title":"Silicon germanium quantum cascade heterostructures for infrared emission","authors":"R. Kelsall, Z. Domic, P. Harrison, S. Lynch, P. Townsend, D. Paul, D. Norris, S. Liew, A. Cullis, X. Li, J. Zhang, M. Bain, H. Gamble","doi":"10.1109/GROUP4.2004.1416644","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416644","url":null,"abstract":"This work demonstrates that there are no fundamental obstacles to the realization of a Si/SiGe quantum cascade laser. This study also reports a number of significant achievements which indicate that the technology is now sufficient, or can be developed to a sufficient level, to attain a working device.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"1130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128353844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hydrogenation effect on 1.54-/spl mu/m Er luminescence in Er-doped amorphous silicon quantum dot films 掺铒非晶硅量子点薄膜中1.54-/spl μ m Er发光的氢化效应
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416673
N. Park, Taeyoub Kim, Kyung‐Hyun Kim, G. Sung, K. Cho, J. Shin, B. Kim, Seong-Ju Park, Jung-Kun Lee, M. Nastasi
{"title":"Hydrogenation effect on 1.54-/spl mu/m Er luminescence in Er-doped amorphous silicon quantum dot films","authors":"N. Park, Taeyoub Kim, Kyung‐Hyun Kim, G. Sung, K. Cho, J. Shin, B. Kim, Seong-Ju Park, Jung-Kun Lee, M. Nastasi","doi":"10.1109/GROUP4.2004.1416673","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416673","url":null,"abstract":"The effect of hydrogenation on Er luminescence depending on the dot size could be explained by Er migration and the number of Er ions near a Si dot before hydrogenation. However, further studies will be needed to completely understand hydrogenation effect.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131354842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Anisotropy of refractive index of /spl beta/-FeSi/sub 2/ /spl β /-FeSi/sub 2/折射率的各向异性
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416671
H. Udono, I. Kikuma, H. Tajima, K. Takarabe
{"title":"Anisotropy of refractive index of /spl beta/-FeSi/sub 2/","authors":"H. Udono, I. Kikuma, H. Tajima, K. Takarabe","doi":"10.1109/GROUP4.2004.1416671","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416671","url":null,"abstract":"Refractive index of /spl beta/-FeSi/sub 2/ has been investigated by polarized optical reflection measurement on a bulk /spl beta/-FeSi/sub 2/ single crystal and Kramers-Kronig analysis. Anisotropy of refractive index was clearly observed for the light polarization of E//a, E//b and E//c.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134393936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Light emission from Ge/Si self-assembled islands in microcavities 微腔中Ge/Si自组装岛的光发射
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416700
P. Boucaud, X. Li, M. E. Kurdi, S. David, X. Checoury, J. Lourtioz, O. Kermarrec, Y. Campidelli, D. Bensahel
{"title":"Light emission from Ge/Si self-assembled islands in microcavities","authors":"P. Boucaud, X. Li, M. E. Kurdi, S. David, X. Checoury, J. Lourtioz, O. Kermarrec, Y. Campidelli, D. Bensahel","doi":"10.1109/GROUP4.2004.1416700","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416700","url":null,"abstract":"We have investigated the optical properties of defect-microcavities in two-dimensional photonic crystals by the room temperature photoluminescence of Ge/Si self-assembled islands. Enhanced emission is observed at 300 K in the 1.2 -1.6 /spl mu/m spectral range.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125242030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信