发布求助
文献互助 智能选刊 最新文献

2020 33rd International Vacuum Nanoelectronics Conference (IVNC)最新文献

筛选
英文 中文
Cathodoluminescent Properties of polycrystalline Ga2O3 thin film and its application UV flat panel light source 多晶Ga2O3薄膜阴极发光特性及其在UV平板光源中的应用
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203164
Jing Yin, Manni Chen, Libin Wang, Xiuqing Cao, J. She, S. Deng, N. Xu, Jun Chen
{"title":"Cathodoluminescent Properties of polycrystalline Ga2O3 thin film and its application UV flat panel light source","authors":"Jing Yin, Manni Chen, Libin Wang, Xiuqing Cao, J. She, S. Deng, N. Xu, Jun Chen","doi":"10.1109/IVNC49440.2020.9203164","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203164","url":null,"abstract":"Polycrystalline gallium oxide thin film was prepared using electron-beam evaporation and a post-annealing treatment. Cathodoluminescent measurement show the gallium oxide thin film has emission peaks ranging from 300 to 650 nm. Using gallium oxide thin film anode, a flat panel UV light source was fabricated by using ZnO nanowires field emitter arrays.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"29 11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132416744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
First-principles evidence of a constant effective field enhancement factor for carbon nanotube field emitters 碳纳米管场发射体恒定有效场增强因子的第一性原理证据
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203565
C. P. de Castro, T. A. de Assis, R. Rivelino, F. de B. Mota, C. D. de Castilho, R. Forbes
{"title":"First-principles evidence of a constant effective field enhancement factor for carbon nanotube field emitters","authors":"C. P. de Castro, T. A. de Assis, R. Rivelino, F. de B. Mota, C. D. de Castilho, R. Forbes","doi":"10.1109/IVNC49440.2020.9203565","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203565","url":null,"abstract":"In recent density-functional-theory (DFT) calculations on small single-walled carbon nanotubes, it has been found that subtracting-off the zero-field components to form induced charge, potential, field and field-enhancement-factor distributions leads to useful theoretical insights and better consistency with the best experiments. This Poster represents an interim report that summarizes the current state of our thinking, and indicates the issues that we consider need to be explored further.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"250 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114186221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron emission properties of planar-type electron emission sources based on nanocrystalline silicon 基于纳米晶硅的平面型电子发射源的电子发射特性
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203289
H. Shimawaki, K. Murakami, M. Nagao, H. Mimura
{"title":"Electron emission properties of planar-type electron emission sources based on nanocrystalline silicon","authors":"H. Shimawaki, K. Murakami, M. Nagao, H. Mimura","doi":"10.1109/IVNC49440.2020.9203289","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203289","url":null,"abstract":"Electron emission properties of planar-type electron emission sources based on oxidized nanocrystalline silicon with graphene-gate electrode were investigated. The emission current was improved by an order of magnitude by vacuum annealing.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114503018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of Miniaturized Traveling-Wave Tubes With Planar Microstrip Slow-Wave Structures on Dielectric Substrates 介质基板微带慢波结构小型化行波管的研制
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203487
N. M. Rvskin, Roman A. Torgashov, G. Torgashov, A. Rozhnev, A. Starodubov, A. Serdobintsev, A. Pavlov, V. Galushka, A. Burtsev, I. A. Navrotskiy, G. Ulisse, V. Krozer
{"title":"Development of Miniaturized Traveling-Wave Tubes With Planar Microstrip Slow-Wave Structures on Dielectric Substrates","authors":"N. M. Rvskin, Roman A. Torgashov, G. Torgashov, A. Rozhnev, A. Starodubov, A. Serdobintsev, A. Pavlov, V. Galushka, A. Burtsev, I. A. Navrotskiy, G. Ulisse, V. Krozer","doi":"10.1109/IVNC49440.2020.9203487","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203487","url":null,"abstract":"For miniaturized vacuum-tube electron devices at millimeter and submillimeter (THz) bands, the possibility of low-voltage operation is of primary importance. Planar slow-wave structures (SWS) on dielectric substrates are favorable for the low-voltage operation. In this paper, we discuss design, fabrication and cold test of millimeter-wave planar SWSs. We consider the microstrip meander-line SWSs, which are designed for operation in traveling-wave tube power amplifiers with sheet electron beam.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"281 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123464346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Density functional calculations with lattice relaxation of field emitted currents 场发射电流晶格松弛的密度泛函计算
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203573
Harilaos J. Gotsis, Rv.Naoum C. Bacalis, J. Xanthakis
{"title":"Density functional calculations with lattice relaxation of field emitted currents","authors":"Harilaos J. Gotsis, Rv.Naoum C. Bacalis, J. Xanthakis","doi":"10.1109/IVNC49440.2020.9203573","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203573","url":null,"abstract":"The VASP DFT package simulates external electric field by inserting the material in the middle of a charged plane capacitor under periodic boundary conditions. At self-consistency some slight electronic charge must rest at the positive capacitor plate. By subtracting its induced potential between the surface and the positive plate, a corrected total external potential is obtained, determining a corrected tunneling length and barrier height.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125926929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monday, 6th July 2020 2020年7月6日，星期一
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/ivnc49440.2020.9203174
{"title":"Monday, 6th July 2020","authors":"","doi":"10.1109/ivnc49440.2020.9203174","DOIUrl":"https://doi.org/10.1109/ivnc49440.2020.9203174","url":null,"abstract":"","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"356 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116132437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polarity-dependent emission and conversion characteristics of GaN-based thermionic cathodes 氮化镓基热离子阴极的极性依赖发射和转换特性
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203458
S. Kimura, H. Yoshida, H. Miyazaki, T. Ito, A. Ogino
{"title":"Polarity-dependent emission and conversion characteristics of GaN-based thermionic cathodes","authors":"S. Kimura, H. Yoshida, H. Miyazaki, T. Ito, A. Ogino","doi":"10.1109/IVNC49440.2020.9203458","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203458","url":null,"abstract":"We observed the polarity-dependent thermionic emission and conversion characteristics of Si-doped n-type GaN-based cathodes with Cs adsorbed on their surfaces. Emission current from the surface of the GaN sample with N -polarity was markedly higher than that with Ga-polarity. We consider that the N-polarity enhanced the surface potential lowering for electrons due to the Cs atom adsorption. These results indicate that, from the viewpoint of a thermionic converter, the electromotive force for emission was higher for N -polarity compared with Ga-polarity.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"159 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132781515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling basic tip forms and its field emission 模拟基本尖端形状及其场发射
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203096
S. Filippov, E. O. Popov, A. G. Kolosko, F. F. Dall’Agnol
{"title":"Modeling basic tip forms and its field emission","authors":"S. Filippov, E. O. Popov, A. G. Kolosko, F. F. Dall’Agnol","doi":"10.1109/IVNC49440.2020.9203096","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203096","url":null,"abstract":"The field enhancement factor (FEF) is an important parameter in field emission studies. There are many approaches from several authors to depict the FEF, each with a proposed formula for a specific emitter shape. In this work, we group the FEF from the main emitter shapes in the literature. In these shapes, we analyze the emission current, electric field distribution on the emitter, among other properties.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"201 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133270515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Field Emission Behaviour of Single-Crystal Pd Nanowires 单晶钯纳米线的场发射特性
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203510
R. Ławrowski, R. Schreiner, Shuangyi Linghu, Fuxing Gu
{"title":"Field Emission Behaviour of Single-Crystal Pd Nanowires","authors":"R. Ławrowski, R. Schreiner, Shuangyi Linghu, Fuxing Gu","doi":"10.1109/IVNC49440.2020.9203510","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203510","url":null,"abstract":"Single-crystal Pd nanowires with typically 100 nm diameters and lengths from several micrometers to tens of micrometers were grown on Al2O3substrates in a furnace with Ar atmosphere. Integral field emission measurements of such samples after Pd coating (~10 nm) were performed in a diode configuration with a 50 $mumathrm{m}$ mica spacer in a vacuum chamber at pressures of about 10–9 mbar. The IV measurement of the sample shows an integral emission current up to 2 $mu mathrm{A}$ at a voltage of 500 V (10 MV/m) and an onset voltage for a current of 1 nA of about 275 V. The corresponding Fowler-Nordheim plot show a linear behavior, like expected for a metal needle.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130947871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Extended Abstracts for Monday Poster Presentations [breaker page] 周一海报演讲的扩展摘要[休息页]
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/ivnc49440.2020.9203566
{"title":"Extended Abstracts for Monday Poster Presentations [breaker page]","authors":"","doi":"10.1109/ivnc49440.2020.9203566","DOIUrl":"https://doi.org/10.1109/ivnc49440.2020.9203566","url":null,"abstract":"","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124107510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信