Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022)最新文献

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Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180 nm CMOS technology TJ-Monopix2 DMAPS在180 nm CMOS技术下的电荷收集和效率测量

Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022) Pub Date : 2023-01-31 DOI: 10.22323/1.420.0080

C. Bespin, I. Caicedo, J. Dingfelder, T. Hemperek, T. Hirono, F. Hugging, H. Kruger, K. Moustakas, H. Pernegger, P. Riedler, L. Schall, W. Snoeys, N. Wermes

{"title":"Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180 nm CMOS technology","authors":"C. Bespin, I. Caicedo, J. Dingfelder, T. Hemperek, T. Hirono, F. Hugging, H. Kruger, K. Moustakas, H. Pernegger, P. Riedler, L. Schall, W. Snoeys, N. Wermes","doi":"10.22323/1.420.0080","DOIUrl":"https://doi.org/10.22323/1.420.0080","url":null,"abstract":"Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has been designed in a 180$,$nm Tower process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, features a large 2$,$cm x 2$,$cm matrix consisting of 512 x 512 pixels with 33.04$,$um pitch. A small collection electrode design aims at low power consumption and low noise while the radiation tolerance for high-energy particle detector applications needs extra attention. With a goal to reach radiation tolerance to levels of $10^{15},1,$MeV n$_text{eq},$cm$^{-2}$ of NIEL damage a modification of the standard process has been implemented by adding a low-dosed n-type silicon implant across the pixel in order to allow for homogeneous depletion of the sensor volume. Recent lab measurements and beam tests were conducted for unirradiated modules to study electrical characteristics and hit detection efficiency.","PeriodicalId":275608,"journal":{"name":"Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022)","volume":"250 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114014651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrafast CMOS image sensors and data-enabled super-resolution for multimodal radiographic imaging and tomography 用于多模态射线成像和断层扫描的超快CMOS图像传感器和数据支持的超分辨率

Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022) Pub Date : 2023-01-27 DOI: 10.22323/1.420.0041

Zhehui Wang, Xin Yue, Shanny Lin, Wenting Li, B. Wolfe, S. Clayton, M. Makela, Chris Morris, S. Spannagel, E. Ramberg, J. Estrada, Hao Zhu, Jifeng Liu, E. Fossum

引用次数: 1

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