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1991 IEEE MTT-S International Microwave Symposium Digest最新文献

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Miniaturized multistage power amplifiers for the 10.95- to 12.75 GHz communications satellite band 用于10.95- 12.75 GHz通信卫星频段的小型化多级功率放大器
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.147223
P. Goettle, B. Geller, F.R. Phelleps, A. Zaghloul, R. Sorbello, F. Assal
{"title":"Miniaturized multistage power amplifiers for the 10.95- to 12.75 GHz communications satellite band","authors":"P. Goettle, B. Geller, F.R. Phelleps, A. Zaghloul, R. Sorbello, F. Assal","doi":"10.1109/MWSYM.1991.147223","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.147223","url":null,"abstract":"The authors describe the design and performance of three prototype power amplifiers that use a combination of MMICs (monolithic microwave integrated circuits) and quasi-monolithic circuits. These amplifiers are intended for use in a satellite multibeam phased-array antenna. The amplifiers are designed to maximize DC-to-RF conversion efficiency and linearity while satisfying additional requirements for output power and minimum size. The four-stage, 30 dB gain modules deliver an output power of 2 W at 2 dB compression, with an efficiency of 25% and a two-tone, carrier-to-third-order intermodulation distortion level of 16 dB.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"7 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131381073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Accurate design centering and yield prediction using the 'truth model' (FET model and MMIC design) 使用“真值模型”(FET模型和MMIC设计)进行精确的设计定心和良率预测
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.147235
M. Meehan, Titus Wandinger, D. A. Fisher
{"title":"Accurate design centering and yield prediction using the 'truth model' (FET model and MMIC design)","authors":"M. Meehan, Titus Wandinger, D. A. Fisher","doi":"10.1109/MWSYM.1991.147235","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.147235","url":null,"abstract":"The truth model is introduced as the first implementation of a statistically validated GaAs FET simulation model. The authors examine the power and accuracy of the truth model by comparing the predicted and measured statistical response of a GaAs monolithic microwave integrated circuit (MMIC) 0.5-2.5 GHz amplifier. By design centering a small-signal amplifier both with and without the use of the truth model, it is shown that both yield estimates and the design center are affected by the accuracy of the device statistical model.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130118882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
A HEMT harmonic oscillator stabilized by an X-band dielectric resonator 一个由x波段介电谐振器稳定的HEMT谐振子
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.146982
R. Tupynamba, E. Camargo, F. S. Correra
{"title":"A HEMT harmonic oscillator stabilized by an X-band dielectric resonator","authors":"R. Tupynamba, E. Camargo, F. S. Correra","doi":"10.1109/MWSYM.1991.146982","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.146982","url":null,"abstract":"A simple design method for harmonic oscillators using HEMT (high-electron-mobility-transistor) devices is presented. The method employs nonlinear analysis to derive the harmonic components of the drain current of a low-frequency transistor model. The resulting harmonic components are used to linearize a high-frequency model and to synthesize the microwave circuit. A second-harmonic oscillator that uses an X-band dielectric resonator and a packaged HEMT device has +6.0 dBm output power at 18 GHz with 6.5% RF/DC efficiency.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133919960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Techniques for heating brain tumors with implanted microwave antennas 植入微波天线加热脑肿瘤的技术
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.147124
T. Ryan
{"title":"Techniques for heating brain tumors with implanted microwave antennas","authors":"T. Ryan","doi":"10.1109/MWSYM.1991.147124","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.147124","url":null,"abstract":"A technique is described in which microwave antennas are inserted into an array of nylon catheters implanted in brain tumors and a localized heat treatment is applied to raise the tumor to 43 degrees C. Flexible antennas of various designs have been used, such as dipole, choke dipole, modified dipole, and helical designs. Phase shifting and phase rotation techniques have been incorporated into the treatment system to steer power in the tumor, as predicted by computer modeling. Choke antennas counter the sensitivity of dipole antennas to insertion length. Clinical results with the different antenna designs are discussed.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127568768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
An experimental low power density rectenna 实验性低功率密度整流天线
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.146961
W. Brown
{"title":"An experimental low power density rectenna","authors":"W. Brown","doi":"10.1109/MWSYM.1991.146961","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.146961","url":null,"abstract":"Describes the design and performance of a 2.45-GHz rectenna that absorbs small amounts (milliwatts) of microwave power at incident power density levels that are 10000 times lower than those normally used and then, after a microwave impedance step up of 50, converts it into DC power at useful voltage levels. Several applications are discussed, including a transponder in a communications or sensor system in which the interrogating transmitter also supplies power to the transponder.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133543670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 54
A highly linear MESFET 一个高度线性的MESFET
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.147106
S. Chu, J. Huang, W. Struble, G. Jackson, N. Pan, M. Schindler, Y. Tajima
{"title":"A highly linear MESFET","authors":"S. Chu, J. Huang, W. Struble, G. Jackson, N. Pan, M. Schindler, Y. Tajima","doi":"10.1109/MWSYM.1991.147106","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.147106","url":null,"abstract":"A highly linear GaAs MESFET has been developed. This device incorporates a spike profile in its active channel and was designed specifically for linearity. A third-order intercept (IP3) and a 1 dB compression power of 43 dBm and 19 dBm, respectively, have been measured on a 400 mu m device at 10 GHz. The difference between these two numbers, 24 dB, is the largest yet reported for a MESFET. This device also dissipates only 400 mW of DC power yielding a linearity figure-of-merit (IP3/P/sub DC/) of 50.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132178982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
Maximum efficiency tuning of microwave amplifiers 微波放大器的最高效率调谐
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.146942
L. Hall, R. Trew
{"title":"Maximum efficiency tuning of microwave amplifiers","authors":"L. Hall, R. Trew","doi":"10.1109/MWSYM.1991.146942","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.146942","url":null,"abstract":"Maximum-efficiency tuning conditions for a microwave power amplifier are determined by a statistical impedance matching method. A physics-based MESFET simulator is used to predict optimum device performance. The sensitivity of efficiency to variations in source harmonic impedance matching is described and shown to be significant. Simulations indicate that proper harmonic tuning can achieve power-added efficiencies of approximately=80% at 5 GHz.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131877029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
A universal model for lossy and dispersive transmission lines for time domain CAD of circuits 电路时域CAD中损耗和色散传输线的通用模型
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.147177
J. Alonso, J. Borja, F. Pérez
{"title":"A universal model for lossy and dispersive transmission lines for time domain CAD of circuits","authors":"J. Alonso, J. Borja, F. Pérez","doi":"10.1109/MWSYM.1991.147177","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.147177","url":null,"abstract":"A universal equivalent circuit for lossy and dispersive transmission lines is presented. Existing CAD (computer-aided design) packages, such as SPICE, can be used for its implementation. The starting points for obtaining the models are the analog filters which approximate the forward impulse response and characteristic impedance. The equivalent circuit is used to simulate the effects of pulse propagation on microstrip transmission lines. An examination of the validity of the model is carried out, analyzing the response for an example case in the time and frequency domains.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115774162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Large-signal modeling and study of power saturation mechanisms in heterojunction bipolar transistors 异质结双极晶体管大信号建模及功率饱和机制研究
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.146943
M. Frankel, D. Pavlidis
{"title":"Large-signal modeling and study of power saturation mechanisms in heterojunction bipolar transistors","authors":"M. Frankel, D. Pavlidis","doi":"10.1109/MWSYM.1991.146943","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.146943","url":null,"abstract":"A harmonic-balance-based large-signal model of the heterojunction bipolar transistor (HBT) suitable for microwave circuit design and simulation has been developed. Equivalent circuits were extracted from measured small-signal S-parameters by equivalent circuit fitting and used in a harmonic-balance-based simulator. Modeled power and gain results were in good agreement with directly measured characteristics. The power saturation mechanisms have been established in terms of current/voltage amplitudes and power-dependent equivalent circuit elements. Saturation has been shown to be due to the signal-voltage swing entering the cutoff or saturation regions with the resulting loss of current gain. It is pointed out that the model can accurately predict experimentally measured AlGaAs/GaAs HBT power characteristics.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124144326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A new design method for maximum gain formulation of a microwave amplifier subject to noise figure and input VSWR 一种考虑噪声系数和输入驻波比的微波放大器最大增益公式的新设计方法
1991 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1991-07-10 DOI: 10.1109/MWSYM.1991.147153
M. Gunes, F. Gunes
{"title":"A new design method for maximum gain formulation of a microwave amplifier subject to noise figure and input VSWR","authors":"M. Gunes, F. Gunes","doi":"10.1109/MWSYM.1991.147153","DOIUrl":"https://doi.org/10.1109/MWSYM.1991.147153","url":null,"abstract":"Presents a graphic design method for low-noise, low-input-VSWR (voltage standing wave ratio) amplifiers, where all necessary design information is placed in the input impedance plane. As a consequence of the bilinear transformations involved, all parameters can be represented by circles whose center and radius are in the input impedance plane. For a given set of the noise figure and input VSWR the maximum achievable gain and corresponding terminations can be determined by inspection of the graph. Furthermore, not only do the analytic expressions make the calculations very fast but the results of changes in the noise figure, input VSWR, and gain can be viewed directly.<<ETX>>","PeriodicalId":263441,"journal":{"name":"1991 IEEE MTT-S International Microwave Symposium Digest","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114636199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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