2012 IEEE International Solid-State Circuits Conference最新文献

A DC-to-1GHz tunable RF ΔΣ ADC achieving DR = 74dB and BW = 150MHz at f0 = 450MHz using 550mW 一个dc - 1ghz可调谐RF ΔΣ ADC，在f0 = 450MHz使用550mW时实现DR = 74dB和BW = 150MHz

2012 IEEE International Solid-State Circuits Conference Pub Date : 2012-04-03 DOI: 10.1109/ISSCC.2012.6176954

H. Shibata, R. Schreier, Wenhua Yang, A. Shaikh, D. Paterson, T. Caldwell, D. Alldred, P. Lai

引用次数: 53

A 280mV-to-1.2V wide-operating-range IA-32 processor in 32nm CMOS 采用32nm CMOS的280mv -1.2 v宽工作范围IA-32处理器

2012 IEEE International Solid-State Circuits Conference Pub Date : 2012-04-03 DOI: 10.1109/ISSCC.2012.6176932

Shailendra Jain, Surhud Khare, Satish Yada, V. Ambili, Praveen Salihundam, S. Ramani, S. Muthukumar, M. Srinivasan, Arun Kumar, Shasi Kumar, R. Ramanarayanan, V. Erraguntla, J. Howard, S. Vangal, S. Dighe, G. Ruhl, Paolo A. Aseron, H. Wilson, N. Borkar, V. De, S. Borkar

引用次数: 212

A batteryless 19μW MICS/ISM-band energy harvesting body area sensor node SoC 无电池19μW MICS/ ism波段能量采集体面积传感器节点SoC

2012 IEEE International Solid-State Circuits Conference Pub Date : 2012-04-03 DOI: 10.1109/ISSCC.2012.6177004

Fan Zhang, Yanqing Zhang, J. Silver, Y. Shakhsheer, M. Nagaraju, Alicia Klinefelter, J. Pandey, James Boley, E. Carlson, A. Shrivastava, B. Otis, B. Calhoun

引用次数: 110

A 7-to-10b 0-to-4MS/s flexible SAR ADC with 6.5-to-16fJ/conversion-step 7- 10b 0- 4ms /s灵活SAR ADC，转换步长6.5- 16fj

2012 IEEE International Solid-State Circuits Conference Pub Date : 2012-04-03 DOI: 10.1109/ISSCC.2012.6177096

P. Harpe, Yan Zhang, G. Dolmans, K. Philips, H. D. Groot

{"title":"A 7-to-10b 0-to-4MS/s flexible SAR ADC with 6.5-to-16fJ/conversion-step","authors":"P. Harpe, Yan Zhang, G. Dolmans, K. Philips, H. D. Groot","doi":"10.1109/ISSCC.2012.6177096","DOIUrl":"https://doi.org/10.1109/ISSCC.2012.6177096","url":null,"abstract":"Applications like wireless sensor nodes require ultra-low-power ADCs. However, each application has different requirements for accuracy and bandwidth. Recent power-efficient ADCs for sensor applications are mostly designed for a fixed accuracy and a limited range of sample rates. An efficiently scalable sample rate (10kS/s to 10MS/s) has been demonstrated before, but without scalability of resolution. In, an ADC with both flexible resolution and sample rate is reported; however, its power efficiency is not as good as the point-solutions in. This paper describes a SAR ADC that achieves both good power efficiency (6.5-to-16fJ/conversion-step) and a wide range of flexibility (7-to-10b resolution, sample rates up to 4MS/s) to cover a large variety of applications, thereby reducing cost, design-time and overall complexity. To optimize the power efficiency for each resolution, both the DAC and comparator are reconfigurable. A 2-step conversion scheme is proposed for 9 and 10b settings to further reduce the power consumption. Finally, the use of an asynchronous architecture and dynamic circuitry ensures that the power consumption scales inherently proportional to the sample rate.","PeriodicalId":255282,"journal":{"name":"2012 IEEE International Solid-State Circuits Conference","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127484461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 96

A 1920×1080 3.65μm-pixel 2D/3D image sensor with split and binning pixel structure in 0.11pm standard CMOS 一个1920×1080 3.65μm像素2D/3D图像传感器，在0.11pm标准CMOS上具有拆分和分组像素结构

2012 IEEE International Solid-State Circuits Conference Pub Date : 2012-04-03 DOI: 10.1109/ISSCC.2012.6177063

Seong-Jin Kim, Byongmin Kang, James D. K. Kim, KeeChang Lee, Chang-Yeong Kim, Kinam Kim

引用次数: 37

A 1.45GHz 52-to-162GFLOPS/W variable-precision floating-point fused multiply-add unit with certainty tracking in 32nm CMOS 基于32nm CMOS的1.45GHz 52 ~ 162gflops /W可变精度浮点融合乘加单元

2012 IEEE International Solid-State Circuits Conference Pub Date : 2012-04-03 DOI: 10.1109/ISSCC.2012.6176987

Himanshu Kaul, M. Anders, S. Mathew, S. Hsu, A. Agarwal, F. Sheikh, R. Krishnamurthy, S. Borkar

{"title":"A 1.45GHz 52-to-162GFLOPS/W variable-precision floating-point fused multiply-add unit with certainty tracking in 32nm CMOS","authors":"Himanshu Kaul, M. Anders, S. Mathew, S. Hsu, A. Agarwal, F. Sheikh, R. Krishnamurthy, S. Borkar","doi":"10.1109/ISSCC.2012.6176987","DOIUrl":"https://doi.org/10.1109/ISSCC.2012.6176987","url":null,"abstract":"High-throughput floating-point computations are key building blocks of 3D graphics, signal processing and high-performance computing workloads [1,2]. Higher floating-point precisions offer improved accuracy at the expense of performance and energy efficiency, with variable-precision floating-point circuits providing run-time precision selection [3]. Real-time certainty tracking enables variable-precision circuits not only to operate at the higher energy efficiency of low-precision datapaths, but also to preserve high-precision accuracy. A variable-precision floating-point unit that performs fused multiply-adds (FMA) with single-cycle throughput while supporting operation in either 1-way single-precision (24b mantissa), 2-way 12b precision or 4-way 6b precision modes is fabricated in 32nm High-k/Metal-gate CMOS [4]. Simultaneous floating-point certainty tracking, preshifted addends, a combined rounding and negation incrementer, efficient reuse of mantissa datapath for multiple parallel lower precision calculations, robust ultra-low voltage circuits, and fine-grained clock gating enable nominal energy efficiency of 52GFLOPS/W (IEEE 32b single-precision, measured at 1.45GHz, 1.05V, 25°C) with a dense layout occupying 0.045mm2 (Fig. 10.3.7) while achieving: (i) scalable performance up to 3.6GFLOPS (single-precision), 96mW measured at 1.2V; (ii) up to 4× higher throughput of 14.4GFLOPS with variable-precision, while maintaining single-precision accuracy; (iii) fast single-cycle precision reconfigurability; (iv) precision mode-dependent power consumption for up to 40% clock power reduction; (v) near-threshold single-precision operation measured at 300mV, 1.75MHz, 11μW; and, (vi) peak energy efficiency of 321GFLOPS/W (single-precision) and 1.2TFLOPS/W (6b precision) at 325mV, 25°C.","PeriodicalId":255282,"journal":{"name":"2012 IEEE International Solid-State Circuits Conference","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117255663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 43

An interference-aware 5.8GHz wake-up radio for ETCS 用于ETCS的干扰感知5.8GHz唤醒无线电

2012 IEEE International Solid-State Circuits Conference Pub Date : 2012-04-03 DOI: 10.1109/ISSCC.2012.6177084

Jeongki Choi, Kanghyuk Lee, Seok-Oh Yun, Sang-Gug Lee, J. Ko

引用次数: 46

A maximum power-point tracker without digital signal processing in 0.35μm CMOS for automotive applications 无数字信号处理的0.35μm CMOS最大功率点跟踪器，用于汽车应用

2012 IEEE International Solid-State Circuits Conference Pub Date : 2012-04-03 DOI: 10.1109/ISSCC.2012.6176894

R. Enne, M. Nikolic, H. Zimmermann

引用次数: 36

A 1.0TOPS/W 36-core neocortical computing processor with 2.3Tb/s Kautz NoC for universal visual recognition 1.0TOPS/W 36核新皮质计算处理器，2.3Tb/s Kautz NoC，用于通用视觉识别

2012 IEEE International Solid-State Circuits Conference Pub Date : 2012-04-03 DOI: 10.1109/ISSCC.2012.6177099

Chuan-Yung Tsai, Yu-Ju Lee, Chun-Ting Chen, Liang-Gee Chen

引用次数: 11

A capacitive touch controller robust to display noise for ultrathin touch screen displays 一种对超薄触摸屏显示噪声具有鲁棒性的电容式触摸控制器

2012 IEEE International Solid-State Circuits Conference Pub Date : 2012-04-03 DOI: 10.1109/ISSCC.2012.6176943

Kiduk Kim, S. Byun, Yoon-Kyung Choi, J. Baek, Hwa-Hyun Cho, Jong-kang Suwon Park, Hae-Yong Ahn, Chang-Ju Lee, Min-Soo Cho, Joo-Hyeon Lee, Sang-Woo Kim, Hyung-Dal Kwon, Yong-Yeob Choi, Hosuk Na, Junchul Park, Yeonwoo Shin, Kyungsuk Jang, Gyoo-cheol Hwang, Myunghee Lee

引用次数: 40