{"title":"VNA S11 Uncertainty Measurement a Comparison of Three Techniques","authors":"B. Oldfield","doi":"10.1109/ARFTG.1992.326976","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326976","url":null,"abstract":"Vector Network Analyzers derive a large percentage of their accuracy from calibration. Assessing the uncertainty of that calibration can be difficult and time consuming. Not assessing the uncertainty can lead to inaccurate measurements. This paper compares the results of three VNA uncertainty assessment techniques. The techniques are Verification, Assurance and Time Domain.","PeriodicalId":220587,"journal":{"name":"39th ARFTG Conference Digest","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125099873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"GaAs MMIC Probe Measurements and Calibration Techniques","authors":"J. Penn, C. Moore","doi":"10.1109/ARFTG.1992.326977","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326977","url":null,"abstract":"The MMlC designer has several options available to verify the performance and simulation agreement of his circuits. They can be divided into two basic categories: calibration reference plane at the probe tips or on the MMIC chip at the coplanar interface to the device under test (DUT). The calibration technique used determines the reference plane of the measurements. Several on-wafei and off-wafer calibration techniques were used to obtain measurements of GaAs MMICs. A Wafer Probe station and a vector network analyzer were used to obtain LRM, SOLT, and TRL calibrated measurements of GaAs devices. In order to use on wafer calibration, an open, a short, a load, a \"short\" microstrip line, and a \"long\" microstrip line were designed and included on the GaAs wafer. An SOLT and a TRL calibration was performed with these on-wafer calibration standards. For off-wafer calibration, the Cascade Microtech Impedance Standard Substrate (ISS) was used to obtain an LRM calibration for a third set of measurements. To equalize the reference plane of the LRM measurements with the on-wafer TRL and SOLT calibration measurements, the MMlC launches which transition from the coplanar probe to the microstrip were subtracted out, i.e. deembeded to equalize the reference plane. A numerical technique was used to extract the approximate s-parameters of the MMIC launch from LRM measured data. Device measurements with all three calibration techniques closely agreed and were repeatable. These deembeded measurements compared favorably to foundry supplied device models.","PeriodicalId":220587,"journal":{"name":"39th ARFTG Conference Digest","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133609021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Characterization of Calibration Standards by Physical Measurements","authors":"K. H. Wong","doi":"10.1109/ARFTG.1992.326972","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326972","url":null,"abstract":"Many modern day automatic network analyzers support a variety of calibration techniques for accuracy enhancement. These techniques offer different levels of calibration accuracy. Even within the same technique, the accuracy level is a function of the quality of the calibration standards used, the accuracy of the assumed model of the calibration standards, or both. The quality and accuracy of these calibration standards have reached a level that no microwave measurement system alone can guarantee their performance specifications. This paper presents an approach that pushes microwave metrology to the physical level.","PeriodicalId":220587,"journal":{"name":"39th ARFTG Conference Digest","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130723469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Production Worthiness of a GaAs Wafer FAB as Demonstrated Through Automated RF Probe Measurements","authors":"A. Lum","doi":"10.1109/ARFTG.1992.326968","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326968","url":null,"abstract":"A novel technique has been developed that utilizes the automated RF probe operation as a means to statistically verify and demonstrate the uniformity of a 0.5um ion-implanted MESFET wafer fab at Texas Instruments. Over seventy-thousand MMICs have been characterized in a 6 month span to provide a healthy statistical database. Analysis of the database shows both the GaAs process and automated measurement technology to be robust and yield uniform device performance. Therefore, verifying that RF probe technique generates both cost and cycle time reduction plus quantifies device performance. The incorporation of this technique is consistent with TI¿s ongoing thrust to continually improve its moderate-volume GaAs wafer fab process.","PeriodicalId":220587,"journal":{"name":"39th ARFTG Conference Digest","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133430238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Measurement Set-Up for High-Frequency Characterization of Planar Contact Devices","authors":"P. Degraeuwe, L. Martens, D. De Zutter","doi":"10.1109/ARFTG.1992.326969","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326969","url":null,"abstract":"A new measurement system using coplanar probe heads has been built in order to perform accurate frequency and time domain measurements on large structures with non-coaxial planar contacts, such as interconnections on PCBs, connectors and multichip modules. The advantages of the system are illustrated by measurements on microstrip lines on a FR4-PCB.","PeriodicalId":220587,"journal":{"name":"39th ARFTG Conference Digest","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124059192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"S-Parameter, I-V Curve and Noise Figure Measurements of III-V Devices at Cryogenic Temperatures","authors":"C. Wilker, P. Pang, C. F. Carter, Z. Shen","doi":"10.1109/ARFTG.1992.326974","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326974","url":null,"abstract":"We have measured the electrical operating parameters for several three-terminal semiconductor III-V devices at both room temperature and liquid nitrogen temperature, 80 K. The fundamental performance parameters, I-V curve, S-parameters and noise figure, change quite dramatically upon cooling. It is necessary to know these parameters if an optimal cryogenic device, e.g. high-temperature superconducting/III-V hybrid, is to be designed and fabricated. The electrical operating parameters for a Fujitsu GaAs high electron mobility field effect transistor, HEMT, and a Litton GaAs metal semiconductor field effect transistor, MESFET, were measured at room temperature and at 80 K. The data collected on these devices were used to design a III-V C-band amplifier with optimum operation at 80 K. This amplifier was used to construct a high-temperature superconducting/III-V hybrid oscillator, a major step towards the high degree of circuit integration required for a useful HTS/III-V hybrid subsystem or system.","PeriodicalId":220587,"journal":{"name":"39th ARFTG Conference Digest","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122617012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Local Oscillator Noise Affects Noise Figure Measurement Accuracy","authors":"S. Yates","doi":"10.1109/ARFTG.1992.326975","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326975","url":null,"abstract":"Noise figure measurements are affected by amplitude modulated noise from local oscillators used in noise figure test systems. When testing microwave amplifiers or mixers/receivers, an external local oscillator(LO) is needed. For microwave amplifiers, the LO downconverts the noise to the noise figure meter's frequency range; while for mixers/receivers, the LO provides a drive signal to the mixer's L port. The LO adds noise to the testing in the form of AM noise. This AM noise elevates the system noise figure when testing amplifiers causing increased measurement uncertainty. For mixers and receivers, the LO noise adds directly to the measurement and causes erroneous results. The AM noise is reduced by placing a filter between the LO and the mixer. This filter limits noise reaching the noise figure meter. The LO AM noise affects the microwave amplifier noise figure measurement uncertainty and falsely elevates mixer/receiver noise figure measurements.","PeriodicalId":220587,"journal":{"name":"39th ARFTG Conference Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130342622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Simple Calibrator for Noise Figure/Gain Meters","authors":"R. Lane","doi":"10.1109/ARFTG.1992.326973","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326973","url":null,"abstract":"The design and construction of a simple 10-100MHz noise figure and insertion gain calibrator is described. This instrument, constructed from readily available components, tests the accuracy of Y factor based noise figure measurement and insertion gain to better than 0.2dB over the full dynamic range of the target instrument, (usually ~50dB). The limitations of the method and the corrections applicable at the low end of the gain range are shown. An example of re-adjusting an Eaton 7380 is given.","PeriodicalId":220587,"journal":{"name":"39th ARFTG Conference Digest","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132454269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Measurement Accuracies for Various Techniques for Measuring Amplifier Noise","authors":"D. Wait","doi":"10.1109/ARFTG.1992.326971","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326971","url":null,"abstract":"The National Institute of Standards and Technology (NIST) has a program to develop an amplifier noise calibration service. Extensive measurements of the noise for different types of low-noise, X-band (8 - 12 GHz) amplifiers were made. This paper concentrates on the accuracy of measuring generalized noise figure for various techniques using the NIST 8 - 12 GHz noise calibration radiometer and a commercial automatic network analyzer.Under favorable conditions, the uncertainty of the effective input noise temperature Te of low-noise amplifiers approaches the uncertainty of an ideal Y-factor measurement for all the measurement techniques explored. For Te greater than 100 K, this is about ± 7% or less. The measurement error is dominated by the uncertainty of NIST primary cryogenic noise standard. The different techniques examined have different strengths and weaknesses. Rather than pick one technique, we found it worthwhile to implement all of them and use the redundant information to assure the measurement.","PeriodicalId":220587,"journal":{"name":"39th ARFTG Conference Digest","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116989122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"MMIC Reflection Coefficient Synthesizer For On-Wafer Noise Parameter Extraction","authors":"M. Dydyk","doi":"10.1109/ARFTG.1992.326970","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326970","url":null,"abstract":"This paper will summarize Noise Parameter Extraction Methods, discuss their limitations and present a novel approach to improving accuracy by incorporating an MMIC reflection coefficient synthesizer into Coplanar Waveguide probe. Products offered by ATN and Cascade Microtech, Inc. that permit automated noise parameter measurements on wafer are limited in accuracy because the variable source impedance necessary for proper operation of the system is connected through a probe which exhibits loss. This loss limits the maximum reflection coefficient presented to the device under test (DUT) and consequently impacts the accuracy of measurements as frequency increases. The reason for this stems from the manner the parameters are extracted. If all the reflection coefficients (or source admittances) presented (by the reflection coefficient synthesizer) are far removed from the optimum, the accuracy of predicting Fmin by extrapolation will suffer. If the accuracy of Fmin becomes questionable, so will the other parameters. To obtain a higher degree of accuracy and increase the diagnostic frequency, it is necessary to imbed the reflection coefficient synthesizer in the RF probe which is the subject of this paper. This is done primarily to reduce losses and take full advantage of the variable source generator capability. In addition, provisions have to be made to introduce a Noise Source into the system. This paper will address the implementation of such a reflection coefficient synthesizer using MMIC technology, compare simulated vs experimental results and discuss future plans.","PeriodicalId":220587,"journal":{"name":"39th ARFTG Conference Digest","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122668834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}