2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)最新文献_第4页

Micro IDEs versus Nano IDEs: Morphological and electrical characterizations 微型ide与纳米ide:形态学和电学表征

2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069131

V. Thivina, U. Hashim, M. Arshad, 'A. Ayoib, N. Nordin, R. Rajapaksha

{"title":"Micro IDEs versus Nano IDEs: Morphological and electrical characterizations","authors":"V. Thivina, U. Hashim, M. Arshad, 'A. Ayoib, N. Nordin, R. Rajapaksha","doi":"10.1109/RSM.2017.8069131","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069131","url":null,"abstract":"Interdigitated Electrode are known as one of the hallmark of biosensors because of its numerous applications. Biosensors projects to be preferable devices especially in hospitals and other medical faculties as well as in other interdisciplinary fields because of its small size and high sensitivity. Since size plays a salient role in sensitivity and selectivity, in this research, 140 nm IDEs and 50μm IDEs were used to test the electrical characterization using current-voltage (I-V) for comparison. The morphological of IDEs were taken by using High Power Microscope with 50x magnification and Scanning Electron Microscope (SEM). Aim of this research is to test electrical characterization on bare aluminium IDEs and IDEs doped with pH solution for both nano Interdigitated Electrode (nIDEs) and also micro Interdigitated Electrodes (μIDEs). Each IDE was tested to achieve a stable pattern of electrical measurements and results were obtained by current-voltage graph. The pH solutions used for this research from pH 2 to pH 12 were dropped on nano IDEs as well as micro IDEs and conductivity was tested using two-point probe and based on the results it was proven that the conductivity of both types of IDEs differs depending on their finger gap size.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124065142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impacts of fin width scaling on the electrical characteristics of 10-nm FinFET at different metal gate work function 不同金属栅功函数下，翅片宽度缩放对10nm FinFET电学特性的影响

2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069144

N. A. F. Othman, S. Hatta, N. Soin

引用次数: 1

Quadcopter sensing system for risky area 危险区域的四轴飞行器传感系统

2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069152

Omar I. Dallal Bashi, W. Z. Wan Hasan, N. Azis, S. Shafie, H. Wagatsuma

引用次数: 3

Fabrication and characterization of carbon-based flexible strain sensor 碳基柔性应变传感器的制备与表征

2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069174

F. Fadzil, R. Sidek, H. Jaafar, M. Hamidon

引用次数: 1

Graphene-based surface plasmon resonance urea biosensor using Kretschmann configuration 基于石墨烯的表面等离子体共振尿素生物传感器

2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069122

N. A. Jamil, P. Menon, F. A. Said, K. A. Tarumaraja, G. Mei, B. Majlis

引用次数: 17

Correlation of wafer level wire bond and package level wire bond for bond pad quality evaluation 圆片级线键和封装级线键的相关性用于键合垫质量评价

2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069116

Lee Kuan Fang

{"title":"Correlation of wafer level wire bond and package level wire bond for bond pad quality evaluation","authors":"Lee Kuan Fang","doi":"10.1109/RSM.2017.8069116","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069116","url":null,"abstract":"Bond pad quality and reliability evaluation is part of important structure test for wafer fabrication. In order to ensure production consistency, and part of continuous monitoring, as well as new process qualification, bond pad evaluation through wire bond is required. Usually the test was conducted by proceed through standard IC packaging such as wafer saw, die attach and wire bond to simulate actual mass production environment. Optionally this can also be done by using wafer level wire bond. Main advantage of wafer level wire bond is shorter test cycle as compare to conventional package level bonding. This could be a significant time saving especially in the fast pace semiconductor field. Key concern of wafer level bonding is the correlation of bonding performance as compare to real application in the field. In view of this, correlation work has been done to study wire bond responds on wafer level bonding as compare to typical package level bonding. Wire bond DOE was carefully planned and conducted for this evaluation. Ball shear and ball dimension data were collected from both type of bonder. This evaluation will also cover observations and challenges of wafer level bonding, together with the recommended solutions.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"234 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115011563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dielectrophoresis based focusing in microfluidic devices 微流控装置中基于介质电泳的聚焦

2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069139

A. Alazzam, F. Alnaimat, A. Hilal-Alnaqbi, W. Waheed, B. Mathew

引用次数: 4

Experimental investigation and physical explanation of shallow trench isolation stress effect in MOSFETs mosfet浅沟隔离应力效应的实验研究与物理解释

2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069169

Chiew Ching Tan, P. Beow Yew Tan

引用次数: 3

Structural and optical properties of anatase TİO2 thin films deposited by dip coating method 浸涂法沉积锐钛矿TİO2薄膜的结构和光学性质

2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069170

S. Samat, M. Sarah, M. Faizul Md Idros

引用次数: 2

Assessing the NSOP (non stick on pad) bond pad by EDX, XPS and ToFSIMS analysis 通过EDX, XPS和ToFSIMS分析评估NSOP(不粘接垫)键合垫

2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI: 10.1109/RSM.2017.8069113

Lai Chin Yung, Ho Ing Hong, C. C. Fei

{"title":"Assessing the NSOP (non stick on pad) bond pad by EDX, XPS and ToFSIMS analysis","authors":"Lai Chin Yung, Ho Ing Hong, C. C. Fei","doi":"10.1109/RSM.2017.8069113","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069113","url":null,"abstract":"NSOP defect is a common defect faced by IC packaging assembly house. The failure modes normally happen when the wire bond process is not able to bond the wire ball head on the silicon chip bond pad surface. In this analysis, the localized NSOP defect had been observed with the gold wire bonding process on gold bond pad itself. Preliminary surface analysis inspections by FESEM and EDX have been done and confirmed that the NSOP failure is cannot rule out is related to contamination issues or process. However, with the FESEM / EDX analytical tool, the real root cause of the NSOP defect still remains unresolved due to no differences in the results between the defect pad and good pad. To deeply understand the NSOP phenomena, surface sensitive analytical tools such as XPS and ToFSIMS have been applied in this analysis. XPS preliminary results finding showed that the NSOP defect is highly suspected due to the plasma cleaning process inducing bond pad surface polarity change and contributing to absorption / re-deposition of contaminate from surrounding. To further strengthen the hypothesis as mentioned, ToFSIMS analysis has also been carried out to prove the finding as observed from XPS analysis.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126666096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0