{"title":"Analytical study of the electronic properties of boron nitride nanosheet","authors":"W. Lim, A. Hamzah, M. Ahmadi, R. Ismail","doi":"10.1109/RSM.2017.8069115","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069115","url":null,"abstract":"The exploration of potential semiconducting materials for nanoelectronics and optoelectronics applications for post-silicon era has attracted significant attention from researchers. The two-dimensional (2D) boron nitride nanosheet (BNNS) is among the candidates due to its analogous structure and supreme properties with the graphene, and yet, retains several extraordinary characteristics especially in term of its stability. To provide more understandings of the BNNS, the analytical study is carried out based on the schematic structure of BNNS using the Nearest Neighbour Tight Binding (NNTB) model. Electronic properties such as the dispersion relation and the density of state (DOS) are modelled. Furthermore, the impacts of the on-site energy and the hopping integral to the band structure are also studied. The result shows that the on-site energy has a significant effect on the band gap while the hopping integral is accountable for the shape of the band structure. The model exhibits good agreement with the computational published results of the band gap 4.57–4.6eV.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132788213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Temperature effect on ON/OFF current ratio of FinFET transistor","authors":"Y. Hashim","doi":"10.1109/RSM.2017.8069160","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069160","url":null,"abstract":"This paper demonstrates the working temperature effect on ON/OFF current ratio of FinFET transistor and the prospect of using it as a temperature nano-sensor. The characteristics of the FinFET transistors were simulated using MUGFET simulation tool at different working temperature. Output characteristics with a working temperature range (−25°C to 125°C) were simulated. Variation of ON current to OFF current ratio (Ion/Ioff) with working temperature was investigated.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128290935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. M. Zuhir, I. Saad, A. Roystone, A. M. Khairul, B. Ghosh, N. Bolong
{"title":"Enhancing efficiency of organic solar cells by interfacial materials modification","authors":"H. M. Zuhir, I. Saad, A. Roystone, A. M. Khairul, B. Ghosh, N. Bolong","doi":"10.1109/RSM.2017.8069154","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069154","url":null,"abstract":"This paper directed towards enhancing power conversion efficiency of organic photovoltaic by exploring emerging non-conjugated polymer material as an interfacial layers. The effect of non-conjugated polar polymers such as polymethyl methacrylate (PMMA), poly(4-vinylpyrirolidone) (PVPy) and poly(4-vinylalcohol) (PVA) as an interfacial layer (IFL) at the cathode side in improving the efficiency of poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PCBM) OPV cell. The best power conversion efficiency (pCE) for OPVs with PVPy film currently is about 3.51% compared to the OPVs without the PVPy film which is about 2.88%. Efficiency enhancement of OPVs with PVA and PMMA film, PCE=3.27% and 3.39% respectively shows that the addition of those interfacial layers between the cathode interfaces had improve charge carrier mobility relative to the devices lacking those materials. This is reflected on the enhancement of open circuit voltage, short circuit current and fill factor value of these OPV device. The introduction of interfacial layer materials to OPV device also had reduce the work function of Al and enhanced short circuit current of OPV device. This eventually improves the reliability and efficiency rate of OPV for future building integrated photovoltaic application.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"12 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113990897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Pham, A. Holland, Huy L. Nguyen, J. Partridge, H. Tran
{"title":"Modified electrical characteristics of filtered cathodic vacuum arc amorphous carbon film on n-Si (100) by heat treatment","authors":"H. Pham, A. Holland, Huy L. Nguyen, J. Partridge, H. Tran","doi":"10.1109/RSM.2017.8069164","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069164","url":null,"abstract":"Carbon allotropes are of great interest recently due to theirs novel applications. This paper examines the electrical behavior of amorphous carbon film, deposited on n-Si substrate by filtered cathodic vacuum arc (FCVA) deposition methodology, after treating it at high temperature. XPS data is also used to further understand the material. FCVA amorphous carbon film deposited at 1000V and post deposition heat-treated at 8000C is suggested to achieve a better Ohmic contact to n-Si substrates with total resistance 1200Ω compared to other settings with total resistance up to 2000Ω.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128764876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design and simulation single stage CMOS TIA for 1.4 GHz,-27 dB MEMS SAW resonator","authors":"N. Kamarudin, J. Karim","doi":"10.1109/RSM.2017.8069162","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069162","url":null,"abstract":"This paper present the design and simulation of low power transimpedance amplifier (TIA) for MEMS SAW resonator. The amplifier should consume low power to compensate the large resonator losses. The design was realized by using Silterra 0.18μm CMOS process. The designed amplifier produced 26.69 dBΩ gain at frequency 1.4 GHz. and consume 2.6 mW power with supply voltage, VDD 1.8 V. When integrate with MEMS SAW resonator, the system made 125.3 dB/Hz@ 1 kHz cut off frequency.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115931573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Mechanical analysis of MEMS diaphragm for bladder pressure monitoring","authors":"Norliana Yusof, B. Bais, B. Majlis, N. Soin","doi":"10.1109/RSM.2017.8069147","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069147","url":null,"abstract":"Implantable bladder pressure sensor need to be very sensitive due to its very low pressure range detection. Hence, proper choice of a diaphragm structure is important as it would give an enormous impact on the sensitivity of a MEMS sensor. In this study, finite element (FEA) analysis is conducted to investigate the mechanical characteristics on four various diaphragm structures; clamped, slotted, corrugated and bossed square diaphragm of a capacitive MEMS pressure sensor. The MEMS diaphragm were designed and simulated using Comsol Multiphysics software. The static analysis was conducted in order to investigate the stress distribution, total displacement and capacitance meanwhile the modal analysis was conducted to determine the resonant frequency of each structure. From static analysis, it can be observed that slotted diaphragm has higher sensitivity compared to other structures. However, from modal analysis, it was found that the highest mechanical natural frequency is achieved by clamped diaphragm. From this study, it can be concluded that slotted diaphragm is the most suitable choice for designing the implantable MEMS bladder pressure sensor due to its high sensitivity and meet the requirement of desirable mechanical natural frequency of the sensor.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115390244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Simulation study of 25 nm PMOS FinFET fabrication with silicon co-implant","authors":"M. Razali, F. Hamid","doi":"10.1109/RSM.2017.8069143","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069143","url":null,"abstract":"Silicon co-implantation into PMOS FinFET fabrication is presented. The co-implantation method is applied at the source and drain to enhance transportation properties of the devices. The device is fabricated using an industry oriented tool, Sentaurus TCAD. Performance assessment is performed on two electrical parameters, which are threshold voltage and driving current. The simulation results show that these parameters are strongly dependent on the co-implantation level. Threshold voltage is reduced with energy implantation of Silicon doped but increased with silicon implant dose concentration. The silicon co-implantation also positively affects the on-current as the on-state current significantly increased.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115504405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Size-based particles separation utilizing dielectrophoresis technique","authors":"N. Yahya, N. A. Aziz, M. R. Buyong, B. Majlis","doi":"10.1109/RSM.2017.8069123","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069123","url":null,"abstract":"This paper describes separation of 3 μm and 10 μm polystyrene particles using dielectrophoresis (DEP) technique. An array of tapered square electrodes with size of 1mm × 1mm and gap size of 80 μm are used in this study. the optimum input frequency in separation for both engineered particles by using droplet technique. Experiment was conducted under negative dielectrophoresis (NDEP), positive dielectrophoresis (PDEP) and crossover frequency of this engineered particles with range 0 to 1.5 MHz. Implementation of dielectrophoresis prove that the capability to manipulate particles based on input frequency tuned at 265 kHz which is FDEP equal to zero. The separation characteristic of polystyrene particles is compare with the separation characteristic of real biological cells i.e red blood cell (RBC) and platelet. Possible application of dielectrophoresis in separation is blood component separation.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114870897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Surface morphological and electrical characterization of silicon nanowires (SiNWs) by conventional photolithography method","authors":"N. Nordin, U. Hashim, A. Ayoib, V. Thivina","doi":"10.1109/RSM.2017.8069142","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069142","url":null,"abstract":"Recently, the outcome of SiNWs had been greatly anticipated because of the remarkable properties including for biomolecules detection. SiNWs had been developed with size reduction lithography to form silicon wires as the final device sensor. The results of the sensor are analyzed to determine surface morphological and electrical behavior of the silicon wires. The relationship between value of the current is directly proportional to voltage values. SiNWs also been tested with metallic presence such as GNPs to detect the electrical measurement. In the future, SiNWs can be used as the repeatability, stability and high bio-compatibility for biomolecules detection such as proteins, RNA, DNA and antibodies.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"206 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121717666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electrochemical deposition of Zinc Oxide thin film using two-terminal setup","authors":"Amer Safri Hamidi, M. Abidin","doi":"10.1109/RSM.2017.8069136","DOIUrl":"https://doi.org/10.1109/RSM.2017.8069136","url":null,"abstract":"This paper reports on deposition process of Zinc Oxide (ZnO) using a simple electrochemical approach. The ZnO thin film was deposited on the Aluminium (Al) substrate in an aqueous solution of Zinc Chloride (ZnCl2) at room temperature using two terminals electrochemical cell that consisted of positive and negative electrodes. Two types of Al substrate were used, which are Al foil and Al plate. Al foil or Al plate acted as the negative electrode (cathode) while Platinum (Pt) wire or Zinc (Zn) plate as the positive electrode (anode). A constant current density of 10 A/m2 was applied in the experiment. 5mM ZnCh and 0.1M potassium chloride (KCl) support solution used as the electrolytic solution. The experiment was carried out by varying the concentration of ZnCl2 electrolyte solution and KCl supporting solution. Three different mixture of electrolyte solution and supporting solution, 125 ml of ZnCl2 + 25 ml of KCl, 100 ml of ZnCl2 + 50 ml KCl and lastly 75 ml ZnCl2 + 75 ml KCl, were used. Each of the samples underwent 30 minutes of deposition process. At the end of the experiment, the morphologies and properties of ZnO were determined by studying the result from Single Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The structures of the ZnO were found as nanosheet-like network. The results evinced the potential of utilizing simpler setup of electrochemical approach in producing good characteristic of ZnO film for respective applications such as solar cell.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134043331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}