发布求助
文献互助 智能选刊 最新文献

Indian Journal of Pure & Applied Physics最新文献

筛选
英文 中文
Dielectric Analysis of Single Walled Carbon Nanotubes Loaded SMC Composites Depending on Resin Type 基于树脂类型的单壁碳纳米管负载SMC复合材料介电特性分析
Indian Journal of Pure & Applied Physics Pub Date : 2022-05-28 DOI: 10.56042/ijpap.v60i6.60926
{"title":"Dielectric Analysis of Single Walled Carbon Nanotubes Loaded SMC Composites Depending on Resin Type","authors":"","doi":"10.56042/ijpap.v60i6.60926","DOIUrl":"https://doi.org/10.56042/ijpap.v60i6.60926","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120943720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Preparation and Investigation of Transparent Conducting Aluminium-doped Zinc Oxide Films Prepared by Sol-gel Method for Sensor Application 溶胶-凝胶法制备传感器用透明导电掺铝氧化锌薄膜及其研究
Indian Journal of Pure & Applied Physics Pub Date : 2022-05-28 DOI: 10.56042/ijpap.v60i6.60672
{"title":"Preparation and Investigation of Transparent Conducting Aluminium-doped Zinc Oxide Films Prepared by Sol-gel Method for Sensor Application","authors":"","doi":"10.56042/ijpap.v60i6.60672","DOIUrl":"https://doi.org/10.56042/ijpap.v60i6.60672","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122418158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Entanglement for Qubit and Qudit in Single Photoionization of Rotationally State Selected, Oriented C3v Polyatomic Molecules 旋转选择取向C3v多原子分子单光子电离中量子比特和量子比特的纠缠
Indian Journal of Pure & Applied Physics Pub Date : 2022-05-28 DOI: 10.56042/ijpap.v60i6.60217
{"title":"Entanglement for Qubit and Qudit in Single Photoionization of Rotationally State Selected, Oriented C3v Polyatomic Molecules","authors":"","doi":"10.56042/ijpap.v60i6.60217","DOIUrl":"https://doi.org/10.56042/ijpap.v60i6.60217","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132543861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photocatalytic Study of Mo/N co-doped Titanium Dioxide (TiO2) Nanoparticles Under Visible Light Irradiation 可见光下Mo/N共掺杂二氧化钛纳米颗粒的光催化研究
Indian Journal of Pure & Applied Physics Pub Date : 2022-05-28 DOI: 10.56042/ijpap.v60i6.61055
{"title":"Photocatalytic Study of Mo/N co-doped Titanium Dioxide (TiO2) Nanoparticles Under Visible Light Irradiation","authors":"","doi":"10.56042/ijpap.v60i6.61055","DOIUrl":"https://doi.org/10.56042/ijpap.v60i6.61055","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126179699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Melting of Quarkonia in strong magnetic field 夸克尼亚在强磁场中的熔化
Indian Journal of Pure & Applied Physics Pub Date : 2022-05-28 DOI: 10.56042/ijpap.v60i6.61756
M. Lal, S. Solanki, Rishabh Sharma, V. Agotiya
{"title":"Melting of Quarkonia in strong magnetic field","authors":"M. Lal, S. Solanki, Rishabh Sharma, V. Agotiya","doi":"10.56042/ijpap.v60i6.61756","DOIUrl":"https://doi.org/10.56042/ijpap.v60i6.61756","url":null,"abstract":"In this paper, spectra of the quarkonium states has been studied using the conditions temperature, chemical potential and the magnetic field. Here our main focus is to study the effect of strong magnetic field on the quarkonium properties. The binding energies and the dissociation temperature for the ground and the first excited states of the charmonium and bottomonium in the presence of strong magnetic field at chemical potential mu = 500 MeV has been studied. Here we use quasiparticle (QP) Debye mass depending upon temperature, magnetic field and chemical potential obtained from the quasiparticle approach. The Debye mass strongly increases at different values of temperature and magnetic field. The binding energy decreases with increase in the temperature at different magnetic field eB= 0.3, 0.5, and 0.7 GeV2 and also decreases with magnetic field at different at T=200,300 and 400 MeV for the J/psi, psi, upsilon, and upsilon prime states of the quarkonia. The dissociation temperature of the quarkonium states falls with the increasing values of the magnetic field at critical temperature Tc =197 MeV","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123964741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Erratum: Self-diffusion coefficients of liquid alkali metals described by the square-well model within the mean spherical approximation 勘误:在平均球面近似内用平方井模型描述的液态碱金属的自扩散系数
Indian Journal of Pure & Applied Physics Pub Date : 2022-04-28 DOI: 10.56042/ijpap.v60i5.24037
{"title":"Erratum: Self-diffusion coefficients of liquid alkali metals described by the square-well model within the mean spherical approximation","authors":"","doi":"10.56042/ijpap.v60i5.24037","DOIUrl":"https://doi.org/10.56042/ijpap.v60i5.24037","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116153840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influences of Cattaneo-Christov Heat Flux, Joule Heating, Viscous Dissipation and Chemical Reaction on Hydromagnetic Pulsating Flow of Oldroyd-B Nanofluid in a Porous Channel Cattaneo-Christov热流密度、焦耳加热、粘性耗散和化学反应对oldroyb纳米流体在多孔通道中磁脉动流动的影响
Indian Journal of Pure & Applied Physics Pub Date : 2022-04-28 DOI: 10.56042/ijpap.v60i5.56673
{"title":"Influences of Cattaneo-Christov Heat Flux, Joule Heating, Viscous Dissipation and Chemical Reaction on Hydromagnetic Pulsating Flow of Oldroyd-B Nanofluid in a Porous Channel","authors":"","doi":"10.56042/ijpap.v60i5.56673","DOIUrl":"https://doi.org/10.56042/ijpap.v60i5.56673","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130676250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Novel Energy Efficient and Process Immune Schmitt Trigger Circuit Design Using FinFET Technology 利用FinFET技术设计一种新型节能且过程免疫的Schmitt触发电路
Indian Journal of Pure & Applied Physics Pub Date : 2022-04-28 DOI: 10.56042/ijpap.v60i5.61700
Umayia Mushtaqa, Md. Waseem Akrama, Dinesh Prasada, Bal Chand Nagarb
{"title":"A Novel Energy Efficient and Process Immune Schmitt Trigger Circuit Design Using FinFET Technology","authors":"Umayia Mushtaqa, Md. Waseem Akrama, Dinesh Prasada, Bal Chand Nagarb","doi":"10.56042/ijpap.v60i5.61700","DOIUrl":"https://doi.org/10.56042/ijpap.v60i5.61700","url":null,"abstract":"Continuous scaling of MOS (Metal oxide semiconductor) devices gives rise to drastic increase in leakage power dissipation, which overall increases the total power dissipation. This happens due to increase in short channel effects. FinFET device has the capability to reduce short channel effects, hence reduces power dissipation as well. In this paper short-gate FinFET (fin type field effect transistor) based Schmitt trigger using LCNT (Leakage Control NMOS transistor) technique is proposed using ASAP7 PDK (A 7nm FinFET Predictive process design kit) at 7nm technology node and comparative analysis is provided with the one without LCNT technique. The simulated results shows that FinFET based Schmitt trigger using LCNT technique reduces average power dissipation and power delay product (PDP) by 36.97% and 35.6%, respectively compared to one without FinFET LCNT technique. The reliability analysis using Monte Carlo approach at ±10% process, voltage and temperature (PVT) variation under 3 σ Gaussian distribution shows that LCNT FinFET Schmitt trigger provides better performance compared to FinFET Schmitt trigger at 7nm technology node.","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125600007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Simple Analytical Model of a GaN MODFET to Study its DC and RF Performance GaN MODFET的简单解析模型，用于研究其直流和射频性能
Indian Journal of Pure & Applied Physics Pub Date : 2022-04-28 DOI: 10.56042/ijpap.v60i5.60815
Prabir Kumar Shita, Radha Raman Pala, Sutanu Duttab
{"title":"A Simple Analytical Model of a GaN MODFET to Study its DC and RF Performance","authors":"Prabir Kumar Shita, Radha Raman Pala, Sutanu Duttab","doi":"10.56042/ijpap.v60i5.60815","DOIUrl":"https://doi.org/10.56042/ijpap.v60i5.60815","url":null,"abstract":"This work presents a theoretical study of a GaN MODFET considering accurate velocity field relation of GaN for a wide range of electric field. The analytical expression of different DC parameters such as drain current, mutual conductance and drain conductance of the device has been derived and their variation over different field regions has been investigated. This work has also been extended to study the RF parameters like cut-off frequency and maximum operating frequency of the device. The threshold voltage of the device is also derived and studied in terms of the thickness of the doped AlGaN layer and mole fraction of AlGaN. The mathematical model presented here is calibrated with the experimentally available results reported earlier and a good agreement has been observed.","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"57 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123459050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficient Green Phosphorescent Organic Light Emitting Diode using Iridium Complex 采用铱配合物的高效绿色磷光有机发光二极管
Indian Journal of Pure & Applied Physics Pub Date : 2022-04-28 DOI: 10.56042/ijpap.v60i5.59238
{"title":"Efficient Green Phosphorescent Organic Light Emitting Diode using Iridium Complex","authors":"","doi":"10.56042/ijpap.v60i5.59238","DOIUrl":"https://doi.org/10.56042/ijpap.v60i5.59238","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130775023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信