2006 IEEE International Integrated Reliability Workshop Final Report最新文献_第4页

New Insight on the Origin of Stress Induced Leakage Current for SIO2/HFO2 Dielectric Stacks SIO2/HFO2介电堆应力诱发漏电流来源的新认识

2006 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2006-10-01 DOI: 10.1109/IRWS.2006.305223

M. Rafik, G. Ribes, D. Roy, S. Kalpat, G. Ghibaudo

引用次数: 2

Fast Prediction Of Gate Oxide Reliability - Application Of The Cumulative Damage Principle For Transforming V-Ramp Breakdown Distributions Into TDDB Failure Distributions 栅极氧化物可靠性的快速预测——应用累积损伤原理将v -坡道击穿分布转化为TDDB失效分布

2006 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2006-10-01 DOI: 10.1109/IRWS.2006.305241

A. Aal

引用次数: 4

Preliminary Study of the Breakdown Strength of TiN/HfO2/SiO2/Si MOS Gate Stacks TiN/HfO2/SiO2/Si MOS栅堆击穿强度的初步研究

2006 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2006-10-01 DOI: 10.1109/IRWS.2006.305231

R. Southwick, M. Elgin, G. Bersuker, R. Choi, W. B. Knowlton

引用次数: 1

Study of Electrically Programmable Fuses through Series of I-V Measurements 通过一系列I-V测量研究可编程熔断器

2006 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2006-10-01 DOI: 10.1109/IRWS.2006.305217

H. Suto, S. Mori, M. Kanno, N. Nagashima

引用次数: 3

Dynamics of Resistance Evolution During Electromigration 电迁移过程中电阻演化动力学

2006 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2006-10-01 DOI: 10.1109/IRWS.2006.305204

X. Federspiel, D. Ney, L. Doyen, V. Girault

引用次数: 10

Modeling of Dispersive Transport in the Context of Negative Bias Temperature Instability 负偏置温度不稳定性下色散输运的建模

2006 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2006-10-01 DOI: 10.1109/IRWS.2006.305200

T. Grasser, W. Gos, B. Kaczer

引用次数: 5

Ultra-Fast Measurements of VTH Instability in SiC MOSFETs due to Positive and Negative Constant Bias Stress SiC mosfet中正、负恒偏置应力下VTH不稳定性的超快速测量

2006 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2006-10-01 DOI: 10.1109/IRWS.2006.305209

M. Gurfinkel, J. Suehle, J. Bernstein, Y. Shapira, A. Lelis, D. Habersat, N. Goldsman

引用次数: 10

NiSi Polysilicon Fuse Reliability in 65nm Logic CMOS Technology NiSi多晶硅熔断器可靠性在65nm逻辑CMOS技术

2006 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2006-10-01 DOI: 10.1109/IRWS.2006.305218

Boon Ang, S. Tumakha, J. Im, S. Paak

引用次数: 4

Influence of Stress-Induced-Leakage-Current on Reliability of HfSiOx with EOT>1.5nm and TiN Gate 应力致漏电流对EOT>1.5nm和TiN栅极HfSiOx可靠性的影响

2006 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2006-10-01 DOI: 10.1109/IRWS.2006.305225

S. Jakschik, T. Kauerauf, R. Degreave, Y. Hwang, R. Duschl, M. Kerber, A. Avellan, S. Kudelka

{"title":"Influence of Stress-Induced-Leakage-Current on Reliability of HfSiOx with EOT>1.5nm and TiN Gate","authors":"S. Jakschik, T. Kauerauf, R. Degreave, Y. Hwang, R. Duschl, M. Kerber, A. Avellan, S. Kudelka","doi":"10.1109/IRWS.2006.305225","DOIUrl":"https://doi.org/10.1109/IRWS.2006.305225","url":null,"abstract":"Looking to reliability of high-k dielectrics, their behavior under electrical stress is very often determined by traps and charges. During the past years a strong focus of the reliability investigation was given to HfO2. However, especially LSTP as well as memory industry is going to use a silicon doped hafnium oxide (HfSiOx). Three different cases of current vs. time dependence are observed with constant voltage stress for HfSiOx. Often the current decreases for short stress times because of charging. This period can be followed by either barrier lowering due to electron detrapping or stress induced leakage current (SILC) (Duschl, 2006). Both mechanisms raise the current level at constant voltage. In the SILC case the increase of leakage can go step wise, whereas for barrier lowering the leakage increases gradually even on small areas. However, although barrier lowering and charging are considered to be reversible by alternating voltage polarity SILC is often not reversible because it introduces damage and high resistance break down spots in the dielectric. During measurement SILC can even remain undetected if barrier lowering and/or charging are dominant. Recently, it was shown that barrier lowering for these HfSiOx is the major contribution to leakage increase over stress time (Duschl, 2006). In the following paper the authors focus on the question if a small SILC contribution behind the dominant measured barrier lowering can become a reliability concern. In a first part major effects of SILC in HfSiOx with EOT>1.5nm and TiN gate are discussed. In a second part we analyze whether SILC damage can be hidden by barrier lowering or not. Finally we are coming to the conclusion, that a sample with leakage increase due to barrier lowering does not exhibit severe SILC in parallel","PeriodicalId":199223,"journal":{"name":"2006 IEEE International Integrated Reliability Workshop Final Report","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121749399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Non-Arrhenius Temperature Acceleration and Stress-Dependent Voltage Acceleration for Semiconductor Device Involving Multiple Failure Mechanisms 涉及多种失效机制的半导体器件的非arrhenius温度加速和应力相关电压加速

2006 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2006-10-01 DOI: 10.1109/IRWS.2006.305219

J. Qin, J. Bernstein

引用次数: 16