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Reconfigurable RF Components for Multifunction RF Systems 用于多功能射频系统的可重构射频组件
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751062
S. Hary, T. Barton, J. Ebel
{"title":"Reconfigurable RF Components for Multifunction RF Systems","authors":"S. Hary, T. Barton, J. Ebel","doi":"10.1109/CSICS.2016.7751062","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751062","url":null,"abstract":"The proliferation of the wireless market has driven the demand for RF systems to dramatically increase functionality, frequency coverage, bandwidth, and efficiency; while simultaneously reducing power consumption and die size to save power and cost. For example, the highly complex RF systems in handset technology have seen a dramatic increase in frequency, operating bands, and complexity of signals with each generation (from 1G to 4G). The next generation (5G) will continue the trend to extend the frequency in to mm-waves due primarily to spectrum congestion, bandwidth, and data rate. DoD is facing comparable challenges in terms of increasing the frequency of operation, bandwidth, and functionality while maintaining cost and accelerating technology insertion (or time to market for commercial). This paper reports on the impact of these new challenges for RF components and discusses solutions under investigation.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133980809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A High Efficiency, Ka-Band Pulsed Gallium Nitride Power Amplifier for Radar Applications 用于雷达的高效率、ka波段脉冲氮化镓功率放大器
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751021
P. Blount, S. Huettner, Ben P. Cannon
{"title":"A High Efficiency, Ka-Band Pulsed Gallium Nitride Power Amplifier for Radar Applications","authors":"P. Blount, S. Huettner, Ben P. Cannon","doi":"10.1109/CSICS.2016.7751021","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751021","url":null,"abstract":"The design and performance of a three stage Ka-band power amplifier MMIC utilizing a 0.2 um GaN on SiC HEMT process technology is presented. Measured both pulsed and CW, the design demonstrates over 5 W of saturated power with an associated power added efficiency (PAE) of 41%. The die size is 2.62x1.62 mm.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131882945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Microwave Noise Analysis in InP and GaAs HBTs InP和GaAs HBTs中的微波噪声分析
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751054
P. Sakalas, T. Nardmann, A. Simukovic, M. Schroter, H. Zirath
{"title":"Microwave Noise Analysis in InP and GaAs HBTs","authors":"P. Sakalas, T. Nardmann, A. Simukovic, M. Schroter, H. Zirath","doi":"10.1109/CSICS.2016.7751054","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751054","url":null,"abstract":"High frequency (h.f.) noise characteristics of advanced InP and GaAs HBTs were measured and simulated. The compact model (CM) HICUM/L2 v2.34 was used for the DC, AC and noise simulation as well as for the noise analysis. Geometry scalable model parameters for InP HBTs with the different emitter widths and lengths were extracted from temperature dependent DC and AC measurements on HBTs and special test structures. The CM is in good agreement with measured data. Non-equilibrium electron transport was found to shape fT and fmax for GaAs HBTs. For both HBT types, based on the noise source decomposition, an analysis of the influence of the different noise sources on the minimum noise figure (NFmin) was performed at different base-collector biases VBC. It was found that noise due to intervalley transfer related electron scattering has negligible impact on NFmin for both InP and GaAs HBTs. H.f. noise reduction as a result of Coulomb current blocking in GaAs HBTs was confirmed. Shot noise correlation was investigated in GaAs HBTs with different base layer thickness (wB) and base doping for the optimal h.f. noise behavior.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114705092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Physical Model of RF Leakage in GaN HEMTs on Si Substrates Based on Atomic Diffusion Analysis at Buffer/Substrate Interface 基于缓冲/衬底界面原子扩散分析的Si衬底GaN hemt射频泄漏物理模型
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751058
Y. Yamaguchi, J. Kamioka, S. Shinjo, K. Yamanaka, T. Oishi
{"title":"Physical Model of RF Leakage in GaN HEMTs on Si Substrates Based on Atomic Diffusion Analysis at Buffer/Substrate Interface","authors":"Y. Yamaguchi, J. Kamioka, S. Shinjo, K. Yamanaka, T. Oishi","doi":"10.1109/CSICS.2016.7751058","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751058","url":null,"abstract":"A RF leakage phenomenon in GaN HEMTs on Si substrates is analyzed with taking atomic diffusion at buffer/substrate interface into consideration, and a novel physical model of RF leakage based on the analysis is proposed. The Al or Ga atoms are moved from buffer layer to Si substrate at an epitaxial growth. Then, an acceptor layer with high hole density and an inversion layer with high electron density are formed in Si substrate. As a result, RF leakage is occurred by the low resistance caused from the two layers. The temperature dependence of S22 and resistance of Si substrate are simulated by TCAD with the proposed physical model, and the results are good agreement with measured results. Moreover, the GaN HEMTs with the improved RF leakage is fabricated, and it realizes the maximum drain efficiency of more than 80%.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115822503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A GaN-Based 10.1MHz Class-F-1 300 W Continuous Wave Amplifier Targeting Industrial Power Applications 针对工业功率应用的基于gan的10.1MHz f -1类300w连续波放大器
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751019
Florian A. Maier, D. Krausse, D. Gruner, R. Reiner, P. Waltereit, R. Quay, O. Ambacher
{"title":"A GaN-Based 10.1MHz Class-F-1 300 W Continuous Wave Amplifier Targeting Industrial Power Applications","authors":"Florian A. Maier, D. Krausse, D. Gruner, R. Reiner, P. Waltereit, R. Quay, O. Ambacher","doi":"10.1109/CSICS.2016.7751019","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751019","url":null,"abstract":"This paper investigates a novel AlGaN/GaN HEMT-based high power amplifier for continuous wave operation in industrial power applications. A GaN HEMT device with a power density of 50 W/mm2 was developed to counter specific challenges in these applications. Based on RF load-pull measurements of the developed transistors an inverse class-F power amplifier with an output power of 300 W and an efficiency of 74 % at 10 MHz was implemented and investigated.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129980871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 45-mW 50-Gb/s Linear Shunt LD Driver in 0.5-µm InP HBT Technology 采用0.5µm InP HBT技术的45 mw 50 gb /s线性并联LD驱动器
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751017
Toshiki Kishi, M. Nagatani, S. Kanazawa, W. Kobayashi, T. Shindo, H. Yamazaki, M. Ida, K. Kurishima, H. Nosaka
{"title":"A 45-mW 50-Gb/s Linear Shunt LD Driver in 0.5-µm InP HBT Technology","authors":"Toshiki Kishi, M. Nagatani, S. Kanazawa, W. Kobayashi, T. Shindo, H. Yamazaki, M. Ida, K. Kurishima, H. Nosaka","doi":"10.1109/CSICS.2016.7751017","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751017","url":null,"abstract":"The transmission capacity of Ethernet has grown rapidly. Advanced multilevel modulation schemes, such as a 4-level pulse amplitude modulation (PAM4), are being investigated as to their suitability for next-generation 400GbE. The demand is now high for a transmitter front-end with a low-power laser diode (LD) driver that is applicable to such multilevel modulations. To meet this demand, we devised a linear shunt LD driver for constructing a low-power transmitter front-end that supports PAM4. The driver was designed and fabricated by using our InP HBT technology (ft = 290 GHz, fmax = 320 GHz). The power dissipation of the driver part is lower than 45 mW at 50 Gb/s. In addition, the power dissipation of the transmitter front-end consisting of the linear shunt LD driver and LD is lower than 226 mW. Our linear shunt LD driver provides linear and high speed operation over 50 Gb/s. In addition, the driver has better power efficiency than any previously reported transmitters based on directly modulated lasers.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121947668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
High-Performance SLCFETs for Switched Filter Applications 用于开关滤波器的高性能slcfet
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751044
J. Parke, R. Freitag, M. Torpey, R. Howell, E. Stewart, M. Snook, I. Wathuthanthri, Shalini Gupta, B. Nechay, M. King, P. Borodulin, K. Renaldo, H. G. Henry
{"title":"High-Performance SLCFETs for Switched Filter Applications","authors":"J. Parke, R. Freitag, M. Torpey, R. Howell, E. Stewart, M. Snook, I. Wathuthanthri, Shalini Gupta, B. Nechay, M. King, P. Borodulin, K. Renaldo, H. G. Henry","doi":"10.1109/CSICS.2016.7751044","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751044","url":null,"abstract":"FET-based switched filters do not occupy a large space in the literature due to the high loss of the switches relative to other technologies. The Super-Lattice Castellated Field Effect Transistor (SLCFET) is a low loss, high isolation, broadband RF switch that meets this need. A 4 channel tunable band pass filter employing SLCFET switches in a splitter/combiner network was fabricated in order to demonstrate the enabling capability of the SLCFET for this application. Each filter state employed a novel, high-Q LC circuit. The insertion loss of the MMIC passbands was around -6.5 dB, of which -1.3 dB was attributable to the six Single Pole Double Throw (SPDT) switches in the network. Breakout SPDTs were measured from 0.5 to 25 GHz. Measured insertion loss at 18 GHz was -0.41 ± 0.1 dB and isolation was -28.8 ± 0.1 dB, for 35 SPDTs on the wafer.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127878044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A 16/32 Gb/s Dual-Mode NRZ/PAM4 SerDes in 65nm CMOS 一个16/32 Gb/s双模NRZ/PAM4 SerDes在65nm CMOS
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751013
Ashkan Roshan-Zamir, Osama Elhadidy, Hae-Woong Yang, S. Palermo
{"title":"A 16/32 Gb/s Dual-Mode NRZ/PAM4 SerDes in 65nm CMOS","authors":"Ashkan Roshan-Zamir, Osama Elhadidy, Hae-Woong Yang, S. Palermo","doi":"10.1109/CSICS.2016.7751013","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751013","url":null,"abstract":"A dual-mode NRZ/PAM4 SerDes seamlessly supports both modulations with a 1-FIR- and 2-IIR-tap DFE receiver and a 4/2-tap FFE transmitter in NRZ/PAM4 modes, respectively. A source-series-terminated (SST) transmitter employs lookup-table (LUT) control of a 31-segment output DAC to implement FFE equalization in NRZ and PAM4 modes with 1.2 Vpp output swing and utilizes low-overhead analog impedance control. Optimization of the quarter-rate transmitter serializer is achieved with a tri-state inverter-based mux with dynamic pre-driver gates. The quarter-rate DFE receiver achieves efficient equalization with 1-FIR tap for the large first post-cursor ISI and 2-IIR taps for long-tail ISI cancellation. Fabricated in GP 65-nm CMOS, the transceiver occupies 0.074 mm2 area and achieves power efficiencies of 10.9 and 5.5 mW/Gbps with 16 Gb/s NRZ and 32 Gb/s PAM4 data, respectively.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133771364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A High-Dynamic-Range W-Band Frequency-Conversion IC for Microwave Dual-Conversion Receivers 微波双转换接收机用高动态范围w波段变频集成电路
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751022
Seong-Kyun Kim, R. Maurer, M. Urteaga, M. Rodwell
{"title":"A High-Dynamic-Range W-Band Frequency-Conversion IC for Microwave Dual-Conversion Receivers","authors":"Seong-Kyun Kim, R. Maurer, M. Urteaga, M. Rodwell","doi":"10.1109/CSICS.2016.7751022","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751022","url":null,"abstract":"We present a high dynamic range W-band frequency conversion IC, incorporating a base-collector diode mixer and a 9:1 LO frequency multiplier, implemented in a 130 nm InP HBT technology. The IC was designed for a broadly tunable 1-22 GHz dual-conversion receiver using a 100 GHz first IF. In up-conversion, from 1-22 GHz to W-band, the IC has 7 dB conversion loss and 23 dB IIP3; in down-conversion, from W-band to 0.1-22 GHz, it has 8 dB conversion loss and 23 dBm IIP3. The IC tunes most of W-band (75-105 GHz) and consumes 2 W.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128993271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Transient Thermal Response Impact of 3.5GHz GaN HEMT Amplifier on TDD LTE Spectrum and Its Improvement Based on a Thermal Equivalent Circuit Approach 3.5GHz GaN HEMT放大器对TDD LTE频谱的瞬态热响应影响及基于热等效电路方法的改进
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751075
K. Ohgami, Yoji Murao, T. Kaneko
{"title":"Transient Thermal Response Impact of 3.5GHz GaN HEMT Amplifier on TDD LTE Spectrum and Its Improvement Based on a Thermal Equivalent Circuit Approach","authors":"K. Ohgami, Yoji Murao, T. Kaneko","doi":"10.1109/CSICS.2016.7751075","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751075","url":null,"abstract":"Thermal response of GaN HEMT amplifier under TDD operations causes ACLR degradation due to the fluctuation of output power. Transient response of the transistor channel temperature and corresponding output power is obtained analytically and numerically. Layered structure is modelled by Cauer thermal equivalent circuit where every thermal resistor and thermal capacitor is obtained assuming that the heat travels within a 45 degree angle range of mounting materials. The model also takes it into account that the amount of heat applied is changing according to the channel temperature because the dissipated power is determined by the output power that changes according to the channel temperature. It will be shown the model explains the experimental transient response of the ACLR degradation of a 2W-class 3.5GHz power amplifier. A potential measure to improve the response is also discussed.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"16 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124414475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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