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Numerical Simulation of Optoelectronic Devices, 2014最新文献

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Ultra-compact modulator based on Epsilon-Near-Zero metamaterial 基于epsilon -近零超材料的超紧凑调制器
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935349
Longzhi Yang, T. Hu, A. Shen, C. Pei, Bing-Xian Yang, T. Dai, Hui Yu, Yubo Li, Xiaoqing Jiang, Jianyi Yang
{"title":"Ultra-compact modulator based on Epsilon-Near-Zero metamaterial","authors":"Longzhi Yang, T. Hu, A. Shen, C. Pei, Bing-Xian Yang, T. Dai, Hui Yu, Yubo Li, Xiaoqing Jiang, Jianyi Yang","doi":"10.1109/NUSOD.2014.6935349","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935349","url":null,"abstract":"We present an ultra-compact modulator with a length of 15 nm by utilizing the squeezing and tunneling ability of the Epsilon-Near-Zero metamaterial. The finite-different time-domain simulations show the insertion loss is roughly -0.27 dB while the 3-dB extinction ratio is obtained with a 0.8 V gate voltage. The device's footprint is as small as 0.01 μm2. This modulator consumes low power and can potentially be ultrafast.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124482496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mode defletion in lithium niobate waveguide via elecctro-optic effect and its application for beam smoothing 铌酸锂波导的电光效应模式偏转及其在光束平滑中的应用
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935363
Y. Wang, Huihui Lu, Jianhui Yu, Yingxin Zeng, Xiaoli He, Yunhan Luo, J. Zhang, Jieyuan Tang, Zhe Chen
{"title":"Mode defletion in lithium niobate waveguide via elecctro-optic effect and its application for beam smoothing","authors":"Y. Wang, Huihui Lu, Jianhui Yu, Yingxin Zeng, Xiaoli He, Yunhan Luo, J. Zhang, Jieyuan Tang, Zhe Chen","doi":"10.1109/NUSOD.2014.6935363","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935363","url":null,"abstract":"In this paper, we establish a straight waveguide model which is made of electro-optic material: lithium niobate. The refractive index profile of the waveguide can be slightly electro-optically manipulated, so that the optical mode can be deflected and reshaped in the transmitted direction of waveguide. When the mode deflection can be modulated via the high speed electro-optic effect, the temporally and spatially beam smoothing can be potentially achieved for the application of inertial confinement fusion system.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114948730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Recent progress in theory of nonlinear pulse propagation in optical fibers 光纤中非线性脉冲传播理论研究进展
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935391
S. Amiranashvili, U. Bandelow, N. Akhmediev
{"title":"Recent progress in theory of nonlinear pulse propagation in optical fibers","authors":"S. Amiranashvili, U. Bandelow, N. Akhmediev","doi":"10.1109/NUSOD.2014.6935391","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935391","url":null,"abstract":"We review recent achievements in theory of ultra-short optical pulses propagating in nonlinear fibers. The following problem is especially emphasized: what is the shortest duration (the highest peak power) of an optical soliton and which physical phenomenon is responsible for breakdown of too short pulses. We argue that there is an universal mechanism that destroys sub-cycle solitons even for the most favorable dispersion profile.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125339575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Calculation of silicon antireflective microstructures for mid-infrared applications 中红外应用中硅抗反射微结构的计算
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935342
Y. M. Song, K. S. Chang
{"title":"Calculation of silicon antireflective microstructures for mid-infrared applications","authors":"Y. M. Song, K. S. Chang","doi":"10.1109/NUSOD.2014.6935342","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935342","url":null,"abstract":"Diffraction efficiencies of antireflective microstructures (AMSs) were calculated using a rigorous coupled wave analysis (RCWA) method for mid-infrared applications. The results show the effect of height, period, and shape of AMSs on the reflection. We also discuss optimum geometry of AMSs for mid-infrared application.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122479321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Trap-assisted tunneling in InGaN/GaN LEDs: Experiments and physics-based simulation InGaN/GaN led中的陷阱辅助隧道:实验和基于物理的模拟
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935332
M. Mandurrino, G. Verzellesi, M. Goano, M. Vallone, F. Bertazzi, G. Ghione, M. Meneghini, G. Meneghesso, E. Zanoni
{"title":"Trap-assisted tunneling in InGaN/GaN LEDs: Experiments and physics-based simulation","authors":"M. Mandurrino, G. Verzellesi, M. Goano, M. Vallone, F. Bertazzi, G. Ghione, M. Meneghini, G. Meneghesso, E. Zanoni","doi":"10.1109/NUSOD.2014.6935332","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935332","url":null,"abstract":"We present results from a combined experimental and numerical investigation of a blue InGaN/GaN LED test structure grown on a SiC substrate, confirming that tunneling represents a critical contribution to the sub-threshold forward-bias current and discussing the relative importance of different trap-assisted electron tunneling processes.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127209507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Photoresponse simulation for separate absorption and multiplication GaN/AlGaN avalanche photodiode 分离吸收倍增GaN/AlGaN雪崩光电二极管的光响应模拟
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935341
Xiaodong Wang, B. Wang, Liwei Hou, Wei Xie, Xiaoyao Chen, M. Pan
{"title":"Photoresponse simulation for separate absorption and multiplication GaN/AlGaN avalanche photodiode","authors":"Xiaodong Wang, B. Wang, Liwei Hou, Wei Xie, Xiaoyao Chen, M. Pan","doi":"10.1109/NUSOD.2014.6935341","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935341","url":null,"abstract":"We present the detailed procedure for modeling of separate absorption and multiplication (SAM) GaN/AlGaN avalanche photodiode (APD). The bias-dependent spectral responsivity characteristics are obtained by using the constructed two-dimensional numerical model. It is found that the spectral responsivities with wavelength from 240 to 450nm are entirely increased with the increased bias.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127227253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Studying the effect of scattering layers on the efficiency of thin film solar cells 研究散射层对薄膜太阳能电池效率的影响
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935410
Z. Rahimi, C. Pflaum
{"title":"Studying the effect of scattering layers on the efficiency of thin film solar cells","authors":"Z. Rahimi, C. Pflaum","doi":"10.1109/NUSOD.2014.6935410","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935410","url":null,"abstract":"Thin film silicon solar cells are optimized in order to increase light absorption. Studying solar cells using experiments requires depositing different layers and building the thin film solar cell, which is usually time consuming and prone to error. Numerical simulation has shown promising results for the calculation of quantum efficiency of thin film solar cells with rough interfaces.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129027022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Gap surface plasmon waveguide analysis 间隙表面等离子体波导分析
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935348
M. G. Nielsen, S. Bozhevolnyi
{"title":"Gap surface plasmon waveguide analysis","authors":"M. G. Nielsen, S. Bozhevolnyi","doi":"10.1109/NUSOD.2014.6935348","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935348","url":null,"abstract":"Plasmonic waveguides supporting gap surface plasmons (GSPs) localized in a dielectric spacer between metal films are investigated numerically and the waveguiding properties at telecommunication wavelengths are presented. Especially, we emphasize that the mode confinement can advantageously be controlled by the waveguide width and the dielectric spacer thickness and thus allows for straightforward fabrication of highly integrated waveguides by a single lithography step.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128713132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monte Carlo simulation of hot electron transport in III-N LEDs III-N led中热电子输运的蒙特卡罗模拟
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935336
Pyry Kivisaari, T. Sadi, J. Oksanen, J. Tulkki
{"title":"Monte Carlo simulation of hot electron transport in III-N LEDs","authors":"Pyry Kivisaari, T. Sadi, J. Oksanen, J. Tulkki","doi":"10.1109/NUSOD.2014.6935336","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935336","url":null,"abstract":"We study electron dynamics in a multi-quantum well (MQW) light-emitting diode (LED) using Monte Carlo simulation and show that at strong injection, Auger recombination in the quantum wells creates a hot electron population which is still visible at the p-contact 250 nm away from the MQW. The Auger-excited electrons also generate a leakage current that is notably larger than leakage predicted by drift-diffusion, indicating that electron leakage in III-N LEDs at strong injection is predominantly caused by Auger-excited hot electrons.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115716767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Influence of gain on transmission of nanocavity containing metamaterials 增益对含超材料纳米腔传输的影响
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935355
A. Keshavarz, E. Tahmasebi
{"title":"Influence of gain on transmission of nanocavity containing metamaterials","authors":"A. Keshavarz, E. Tahmasebi","doi":"10.1109/NUSOD.2014.6935355","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935355","url":null,"abstract":"This paper studies the influence of gain on transmission of electromagnetic waves through the nanocavity placed between two reflectors. The reflectors consist of alternating nano-layered structure that contains dispersive negative and non-dispersive positive refractive index materials. Here, we analyze transmission of the structure by utilizing transfer matrix method on 103 THz regime of frequency.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128028223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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